IXGM17N100A

VCES IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; RGE = 1 MΩ Maximum Ratings Continuous Transient I C25 TC = 25°C I C90 TC = 90°C I CM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, T VJ = 125°C, RG = 82 Ω Clamped inductive load, L = 300 µH PC TC = 25°C 1000 V 1000 V ±20 V ±30 V 34 A 17 A 68 A ICM = 34 @ 0.8 VCES A 150 W -55 ... +150 °C 150 °C -55 ... +150 °C O TJ TJM Tstg Md BS Mounting torque (M3) Weight O Test Conditions BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE ICES VCE = 0.8 • VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g G C E TO-204 AE (IXGM) G = Gate, E = Emitter, C C = Collector, TAB = Collector Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol 3.5 V 4.0 V TO-247 AD (IXGH) LE VGES VGEM VCE(sat) TE Low VCE(sat) IGBT High speed IGBT IC25 °C 300 l l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l 1000 2.5 V 5 V l l l = IC90, VGE = 15 V TJ = 25°C TJ = 125°C 17N100 17N100A 250 1 µA mA ±100 nA 3.5 4.0 V V l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l l © 1996 IXYS All rights reserved 91515E (3/96) IXGH 17N100 IXGH 17N100A Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs I C = I C90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 6 Cies 15 pF Cres 40 pF Qg 100 120 nC 20 30 nC 90 nC Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 60 Qgc tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 VCES , RG = Roff = 82 Ω 200 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C 500 ns 1000 ns 750 ns ns 17N100 17N100A 750 450 17N100A 3 mJ 100 ns IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES , RG = Roff = 82 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG ns 1 = Gate 2 = Collector 3 = Emitter Tab = Collector LE td(off) 100 200 ns 2.5 mJ 700 1000 ns 17N100 17N100A 1200 750 2000 1000 ns ns 17N100 17N100A 8 6 O tri Inductive load, TJ = 25°°C BS td(on) TE pF 175 VCE = 25 V, VGE = 0 V, f = 1 MHz TO-247 AD Outline S 1500 Coes IXGM 17N100 IXGM 17N100A mJ mJ TO-204AE Outline 0.83 K/W 0.25 K/W O IXGH 17N100 and IXGH 17N100 A characteristic curves are located on the IXGH 17N100U1 and IXGH 17N100AU1 data sheets. 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.