IXGM25N100A

VCES Low VCE(sat) High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V V CES TJ = 25°C to 150°C V CGR TJ = 25°C to 150°C; RGE = 1 MΩ V GES Continuous V GEM Transient I C25 T C = 25°C I C90 T C = 90°C I CM T C = 25°C, 1 ms SSOA (RBSOA) V GE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH PC T C = 25°C TJM Tstg BS Weight O Test Conditions BVCES IC = 3 mA, VGE = 0 V VGE(th) IC = 250 µA, VCE = VGE I CES V CE = 0.8 • VCES V GE = 0 V I GES V CE = 0 V, VGE = ±20 V VCE(sat) IC = IC90, VGE = 15 V 1000 V ±20 V ±30 V 50 A A A ICM = 50 @ 0.8 VCES A 200 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 50 A 50 A 3.5 V 4.0 V TO-247 AD (IXGH) G C E TO-204 AE (IXGM) G = Gate, E = Emitter, C C = Collector, TAB = Collector Features International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol V 25 Mounting torque (M3) Md 1000 100 O TJ Maximum Ratings VCE(sat) TE Test Conditions LE Symbol I C25 °C 300 l l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies l 1000 2.5 V 5 V l l l TJ = 25°C TJ = 125°C 25N100 25N100A 250 1 µA mA ±100 nA 3.5 4.0 V V l Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density l l © 1996 IXYS All rights reserved 91516E (3/96) IXGH 25N100 IXGH 25N100A Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 8 Cies C oes 15 S 2750 pF 200 pF 50 pF VCE = 25 V, VGE = 0 V, f = 1 MHz C res Qg Q ge IC = IC90, VGE = 15 V, VCE = 0.5 VCES Q gc td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff nC 55 Inductive load, TJ = 25°°C IC = IC90, VGE = 15 V, L = 300 µH, VCE = 0.8 V CES, RG = Roff = 33 Ω Remarks: Switching times may increase 25N100A for VCE (Clamp) > 0.8 • V CES, 25N100A higher TJ or increased RG Inductive load, TJ = 125°°C 100 200 500 500 5 IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 V CES, RG = Roff = 33 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES , higher TJ or increased RG RthJC 90 nC ns ns ns 1 = Gate 2 = Collector 3 = Emitter Tab = Collector ns mJ 25N100 25N100A 100 ns 250 ns 3.5 mJ 720 1000 ns 950 800 3000 1500 ns ns 25N100 25N100A 10 8 mJ mJ 0.62 K/W TO-204AE Outline K/W BS 0.25 O RthCK nC 60 LE tri 180 25 O td(on) 130 TO-247 AD Outline TE Symbol IXGM 25N100 IXGM 25N100A 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXGH 25N100 IXGH 25N100A Fig. 1 Saturation Characteristics 50 200 9V 160 35 140 IC - Amperes 40 30 25 7V 20 10 11V 120 100 80 9V 60 40 5 0 0 1 2 3 4 5 0 VCE - Volts 2 4 6 8 10 12 14 16 18 20 VCE - Volts Fig. 4 Temperature Dependence of Output Saturation Voltage LE Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 1.5 10 9 TJ = 25°C 7 6 IC = 50A O 5 4 3 IC = 25A 2 IC = 12.5A BS 1 7 8 9 10 11 12 13 14 1.3 1.2 1.1 IC = 25A 1.0 0.9 IC = 12.5A 0.8 0 6 IC = 50A 1.4 8 0.7 -50 15 -25 0 VGE - Volts 25 50 75 100 125 150 TJ - Degrees C Fig. 5 Input Admittance Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 50 1.2 VGE(th) O VCE = 10V BV / V(th) - Normalized 40 IC - Amperes 7V 20 0 VCE - Volts 13V TE 15 VGE = 15V TJ = 25°C 180 VCE(sat) - Normalized IC - Amperes Fig. 2 Output Characterstics 13V 11V VG E= 15V TJ = 25°C 45 IXGM 25N100 IXGM 25N100A 30 20 TJ = 25°C 10 TJ = 125°C IC = 250µA 1.1 1.0 0.9 BV CES IC = 250µA 0.8 0.7 TJ = - 40°C 0 0 1 2 3 4 5 6 7 8 9 0.6 -50 10 VGE - Volts 0 25 50 75 TJ - Degrees C 25N100g1.JNB © 1996 IXYS All rights reserved -25 100 125 150 IXGH 25N100 IXGH 25N100A Fig.7 Gate Charge 15 100 10 IC - Amperes 11 9 7 5 T J = 125°C dV/dt < 3V/ns 1 TE VGE - Volts Fig.8 Turn-Off Safe Operating Area VCE = 800V IC = 25A IG = 10mA 13 IXGM 25N100 IXGM 25N100A 0.1 3 1 0.01 0 25 50 75 100 125 150 0 Gate Charge - nCoulombs f = 1MHz Cies 2000 1600 800 1000 V CE - Volts 25N100g2.JNB 1200 800 Coes 400 Cres BS 0 600 O Capacitance - pF 2400 400 LE Fig.9 Capacitance Curves 200 0 5 10 15 20 25 V CE - Volts Fig.10 Transient Thermal Impedance O 1 Zthjc (K/W) D=0.5 D=0.2 0.1 D=0.1 D = Duty Cycle D=0.05 D=0.02 D=0.01 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.