IXGR120N60B

HiPerFASTTM IGBT ISOPLUS247TM IXGR 120N60B VCES IC25 (Electrically Isolated Back Surface) = 600 V = 156 A = 2.1 V VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 156 A IC110 TC = 110°C 102 A IL(RMS) External lead limit 76 A ICM TC = 25°C, 1 ms 300 A G = Gate, E = Emitter SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 2.4 Ω Clamped inductive load ICM = 200 @ 0.8 VCES A * Patent pending PC TC = 25°C 520 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1minute leads-to-tab Weight 2500 V 5 g ISOPLUS 247 E153432 G C Isolated Backside* E C = Collector Features z DCB Isolated mounting tab z Meets TO-247AD package Outline z High current handling capability z Latest generation HDMOSTM process z MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions BVCES IC = 1 mA, VGE = 0 V 600 VGE(th) IC = 1 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE(sat) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 150°C VCE = 0 V, VGE = ±20 V IC = 100A, VGE = 15 V (see note 1) © 2004 IXYS All rights reserved V 5.5 V 200 2 µA mA ±400 2.1 nA V Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers Advantages z Easy assembly z High power density z Very fast switching speeds for high frequency applications DS98744A(08/04) IXGR 120N60B Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = 60A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 50 75 S 11000 pF 680 pF Cres 190 pF Qg 350 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 100A, VGE = 15 V, VCE = 0.5 VCES Qgc 72 nC 131 nC td(on) Inductive load, TJ = 25°°C 60 ns tri IC = 100A, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 2.4 Ω 45 ns Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff 2.4 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°°C IC = 100A, VGE = 15 V VCE = 0.8 • VCES, RG = Roff = 2.4 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG mJ 200 360 ns 160 280 ns 5.5 9.6 mJ 60 ns 60 ns 4.8 mJ 290 ns 250 ns 8.7 mJ RthJC ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 0.3 K/W RthCK 0.15 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 IXGR 120N60B Fig. 1. Output Characte ristics @ 25 ºC Fig. 2. Extended Output Characte ristics @ 25 ºC 150 300 VGE = 15V 13V 11V 250 9V 100 I C - Amperes I C - Amperes VGE = 15V 13V 11V 125 75 7V 50 25 200 9V 150 7V 100 50 5V 5V 0 0 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 0.5 1 V C E - Volts Fig. 3. Output Characteristics @ 125 ºC VGE = 15V 100 7V 75 50 3 3.5 4 I C = 150A 1.1 1.0 1.0 I C = 100A 0.9 0.9 0.8 25 0.8 5V 0 I C = 50A 0.7 0.6 0.8 1 1.2 1.4 1.6 V CE - Volts 1.8 2 2.2 -50 2.4 -25 0 25 50 75 100 125 150 7.5 8 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 180 3.6 TJ = 25ºC 3.4 160 3.2 140 3 I C = 150A 2.8 100A 50A 2.6 I C - Amperes VC E - Volts 2.5 VGE = 15V 1.1 9V VC E (sat)- Normalized I C - Amperes 1.2 13V 11V 125 2 V C E - Volts Fig. 4. Dependence of V CE(sat) on Tem perature 1.2 150 1.5 2.4 2.2 120 100 TJ = 125ºC 80 25ºC 60 -40ºC 40 2 20 1.8 0 1.6 6 7 8 9 10 11 V G E - Volts © 2004 IXYS All rights reserved 12 13 14 15 4 4.5 5 5.5 6 6.5 V G E - Volts 7 IXGR 120N60B Fig. 8. Dependence of Turn-off Fig. 7. Transconductance 160 140 TJ = -40ºC 25ºC E o f f - milliJoules g f s - Siemens 120 125ºC 100 80 60 9 TJ = 125ºC 8 VGE = 15V VCE = 480V 7 I C = 100A 6 5 4 40 3 20 2 I C = 50A 1 0 0 20 40 60 80 100 120 140 160 2 180 5 6 7 8 9 Fig. 9. Dependence of Turn-Off Fig. 10. Dependence of Turn-off Energy Loss on Tem perature 10 6 R G = 2.7Ω 5 VGE = 15V 5 4 E o f f - milliJoules TJ = 125ºC VCE = 480V 4 4 R G - Ohms Energy Loss on IC 5 3 I C - Amperes 5 E o f f - MilliJoules Energy Loss on RG 10 TJ = 25ºC 3 3 I C = 100A R G = 2.7Ω 4 VGE = 15V 4 VCE = 480V 3 3 I C = 50A 2 2 2 2 1 50 55 60 65 70 75 80 I C - Amperes 85 90 95 100 25 Fig. 11. Dependence of Turn-off 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 Fig. 12. Dependence of Turn-off Sw itching Tim e on RG 700 35 Sw itching Tim e on IC 350 tfi - - - - - - 600 I C = 50A 100A TJ = 125ºC 500 Switching Time - nanoseconds Switching Time - nanoseconds td(off) VGE = 15V VCE = 480V 400 300 I C = 100A 50A 200 300 td(off) tfi - - - - - 250 R G = 2.7Ω 200 VGE = 15V TJ = 125ºC TJ = 25ºC VCE = 480V 150 100 50 100 2 3 4 5 6 R G - Ohms 7 8 9 10 IXYS reserves the right to change limits, test conditions, and dimensions. 50 60 70 80 I C - Amperes 90 100 IXGR 120N60B Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 16 350 Switching Time - nanoseconds I C = 50A td(off) I C = 100A , tfi - - - - - I C = 100A 12 I G = 10mA R G = 2.7Ω, VGE = 15V 250 VG E - Volts VCE = 480V 200 150 I C = 100A 10 8 6 4 50A 100 VCE = 300V 14 300 2 50 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 0 100 200 300 400 500 Q G - nanoCoulombs Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 100000 220 f = 1 MHz 200 160 10000 I C - Amperes Capacitance - p F 180 C ies C oes 1000 140 120 100 80 60 TJ = 125ºC 40 R G = 2.7Ω 20 C res 100 dV/dT < 5V/ns 0 0 5 10 15 20 25 V C E - Volts 30 35 40 100 150 200 250 300 350 400 450 500 550 600 V C E - Volts Fig . 17. M axim u m T r an s ie n t T h e r m al Re s is tan ce R( t h ) J C - ºC / W 1 0. 1 0 . 01 1 © 2004 IXYS All rights reserved 10 Puls e W idth - millis ec onds 10 0 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.