IXGR24N120C3D1

Preliminary Technical Information IXGR24N120C3D1 GenX3TM 1200V IGBT VCES = IC25 = VCE(sat) ≤ tfi(typ) = High speed PT IGBTs for 20-50kHz Switching ISOPLUS 247TM (IXGR) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ VGES VGEM Continuous Transient IC25 IC100 ICM TC = 25°C TC = 100°C TC = 25°C, 1ms IA TC = 25°C 20 A EAS TC = 25°C 250 mJ SSOA (RBSOA) VGE = 15V, TJ = 125°C, RG = 5Ω Clamped inductive load @VCE ≤ 1200V ICM = 48 A PC TC = 25°C 200 W -55 ... +150 150 -55 ... +150 °C °C °C 20..120/4.5..27 N/lb. 300 260 °C °C TJ TJM Tstg 1200 1200 V V ±20 ±30 V V 48 24 96 A A A FC Mounting force TL TSOLD Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s VISOL 50/60 Hz RMS, t = 1min 2500 V IISOL < 1mA, 3000 V 5 g t = 20seconds Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values Min. Typ. Max. = 250μA, VGE = 0V = 250μA, VCE = VGE IGES VCE = 0V, VGE = ±20V VCE(sat) IC 1200 2.5 TJ = 125°C = 20A, VGE = 15V, Note 2 TJ = 125°C © 2008 IXYS CORPORATION, All rights reserved 3.6 3.1 1200V 48A 4.2V 110ns 5.0 V V 100 1.5 μA mA ±100 nA 4.2 V V G C G = Gate E = Emitter E ISOLATED TAB C = Collector TAB = Collector Features • DCB Isolated mounting tab • Meets TO-247AD package outline • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on -drive simplicity • Avalanche Rated Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings • Easy assembly • High power density • Very fast switching speeds for high frequency applications DS99946(02/08) IXGR24N120C3D1 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs IC = 24A, VCE = 10V, Note 2 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 10 17 S 1620 179 52 pF pF pF 79 nC 12 nC 36 nC 16 26 1.37 93 110 ns ns mJ ns ns Qg Qge IC = 24A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°°C IC = 20A, VGE = 15V VCE = 600V, RG = 5Ω Note 1 ISOPLUS247 (IXGR) Outline Eoff 0.47 td(on) tri Eon td(off) tfi Eoff 17 37 2.90 125 305 1.18 2.00 0.15 1.00 °C/W °C/W Inductive load, TJ = 125°°C IC = 20A, VGE = 15V VCE = 600V, RG = 5Ω Note 1 RthJC RthCK 0.85 mJ ns ns mJ ns ns mJ Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VF IF = 30A, VGE = 0V IF = 30A, VGE = 0V IRM trr Characteristic Values Min. Typ. Max. TJ = 125°C IF = 50A, -diF/dt = 100A/μs, VR = 600V VGE = 0V, TJ = 100°C 5.5 220 V V 11 A ns 1.5 °C/W RthJC Notes: 2.75 1.80 1. 2. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR24N120C3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 180 50 VGE = 15V VGE = 15V 13V 11V 45 40 160 140 13V 9V IC - Amperes IC - Amperes 35 30 25 7V 20 120 11V 100 80 60 15 9V 40 10 20 5 7V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 2 4 6 8 Fig. 3. Output Characteristics @ 125ºC 12 14 16 18 20 22 24 26 Fig. 4. Dependence of VCE(sat) on Junction Temperature 50 1.4 VGE = 15V 13V 11V 40 VGE = 15V 1.3 I 35 VCE(sat) - Normalized 45 IC - Amperes 10 VCE - Volts VCE - Volts 9V 30 25 7V 20 15 C = 48A 1.2 1.1 1.0 I C = 24A I C = 12A 0.9 0.8 10 0.7 5V 5 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 5.5 -25 0 VCE - Volts 25 50 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 100 125 150 Fig. 6. Input Admittance 60 8.0 55 TJ = 25ºC 7.5 TJ = - 40ºC 25ºC 125ºC 50 I 6.5 C 45 = 48A 24A 12A IC - Amperes 7.0 VCE - Volts 75 TJ - Degrees Centigrade 6.0 5.5 5.0 40 35 30 25 20 4.5 15 4.0 10 3.5 5 3.0 0 5 6 7 8 9 10 11 VGE - Volts © 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 VGE - Volts 7.0 7.5 8.0 8.5 9.0 IXGR24N120C3D1 Fig. 7. Transconductance Fig. 8. Gate Charge 16 26 TJ = - 40ºC 24 20 I C = 24A I G = 10mA 12 25ºC 18 VGE - Volts g f s - Siemens VCE = 600V 14 22 16 125ºC 14 12 10 10 8 6 8 4 6 4 2 2 0 0 0 10 20 30 40 50 60 70 80 0 10 20 IC - Amperes 30 40 50 60 70 80 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 55 10,000 f = 1 MHz 50 40 Cies 1,000 IC - Amperes Capacitance - PicoFarads 45 Coes 35 30 25 20 100 15 10 Cres 5 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 5Ω dV / dt < 10V / ns 0 200 400 600 800 1000 1200 1400 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 10.00 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_24N120C3D1(4N)02-19-08 IXGR24N120C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 1.5 3.4 1.4 3.2 1.3 3.0 2.4 0.9 VCE = 600V 2.2 0.8 2.0 0.7 1.8 0.6 1.6 I C = 10A 0.4 6 8 10 12 14 16 18 1.2 2.4 TJ = 125ºC 1.0 2.0 0.8 1.6 0.6 1.2 0.4 0.8 0.4 TJ = 25ºC 0.0 1.2 4 0.0 10 20 11 12 13 RG - Ohms 1.8 0.4 1.2 t f - Nanoseconds 0.6 - MilliJoules 2.4 on I C = 20A 0.2 0.0 55 65 75 85 95 105 115 280 280 I C 200 I 220 0.0 125 200 C = 10A 160 120 80 4 6 8 10 12 14 16 18 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 130 340 125 350 140 105 VCE = 600V 140 100 100 95 t f - Nanoseconds 110 250 120 I C = 20A 200 110 I 150 C = 10A 100 100 TJ = 25ºC 20 85 10 11 12 13 14 15 16 17 IC - Amperes © 2008 IXYS CORPORATION, All rights reserved 18 90 90 19 20 50 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 80 125 - Nanoseconds td(off) - - - - RG = 5Ω , VGE = 15V VCE = 600V d(off) 115 t d(off) - Nanoseconds TJ = 125ºC 130 RG = 5Ω , VGE = 15V 120 260 td(off) - - - - tf t 300 60 20 RG - Ohms 300 t f - Nanoseconds 240 = 20A 260 0.6 380 180 320 300 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 360 VCE = 600V TJ - Degrees Centigrade 220 20 TJ = 125ºC, VGE = 15V 240 I C = 10A 45 19 t d(off) - Nanoseconds 3.0 0.8 35 18 td(off) - - - - tf 320 VCE = 600V 25 17 400 340 3.6 E Eoff - MilliJoules ---- RG = 5Ω , VGE = 15V 1.0 16 360 4.2 Eon 15 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.4 Eoff 14 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 1.2 2.8 VCE = 600V 0.2 1.4 3.2 - MilliJoules TJ = 125ºC , VGE = 15V - MilliJoules 1.0 ---- on 2.6 --- 0.5 1.4 on Eon - Eoff Eon RG = 5Ω , VGE = 15V 2.8 = 20A E 1.1 C 3.6 Eoff 1.6 Eoff - MilliJoules I 1.8 E 1.2 Eoff - MilliJoules Fig. 13. Inductive Switching Energy Loss vs. Collector Current IXGR24N120C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 60 td(on) - - - - 55 tr 50 TJ = 125ºC, VGE = 15V 22 I C = 20A 30 17 I C = 10A t r - Nanoseconds 18 30 16.5 26 16.0 22 15.5 18 15.0 25 16 20 15 15 14 14 13 10 10 6 8 10 12 14 16 18 20 TJ = 25ºC 14.5 14.0 10 RG - Ohms 17.0 TJ = 125ºC - Nanoseconds 35 VCE = 600V d(on) 34 t 19 - Nanoseconds 40 17.5 RG = 5Ω , VGE = 15V d(on) 20 td(on) - - - - tr 38 t 45 4 18.0 21 VCE = 600V t r - Nanoseconds 42 23 11 12 13 14 15 16 17 18 19 20 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 40 19 td(on) - - - - tr RG = 5Ω , VGE = 15V 35 18 VCE = 600V 17 16 20 15 I C - Nanoseconds 25 d(on) t r - Nanoseconds t I C = 20A 30 = 10A 15 14 10 25 35 45 55 65 75 85 95 105 115 13 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_24N120C3D1(4N)02-26-08-A IXGR24N120C3D1 70 A 60 5 T = 100°C μC VVJ= 600V R Qr IF 50 50 4 IRM 3 30 IF= 60A IF= 30A IF= 15A 2 20 1 10 0 1 2 3 V 10 0 100 4 220 2.0 200 VFR trr μs tfr 0.8 VFR 0.4 140 0 40 80 120 C 160 120 0 200 400 600 800 1000 A/μs -diF/dt Fig. 25. Recovery time trr versus -diF/dt 1 1 K/W ZthJC - K/W V 40 Fig. 24. Dynamic Parameters Qr, IRM ZthJC 1.2 tfr TVJ 2 600 A/μs 800 1000 -diF/dt TVJ= 100°C IF = 30A 160 Qr 0.5 400 80 IF= 60A IF= 30A IF= 15A 180 IRM 200 120 TVJ= 100°C VR = 600V ns 1.0 0 Fig. 23. Peak reverse current IRM Fig. 22. Reverse recovery charge Qr Fig. 21. Forward current IF versus VF 1.5 Kf 0 A/μs 1000 -diF/dt VF 0.0 IF= 60A IF= 30A IF= 15A 30 20 0 TVJ= 100°C VR = 600V A 40 TVJ=150°C TVJ=100°C TVJ= 25°C 40 60 0.1 0.1 0.01 0.01 0.001 0.0001 0.001 0.00001 0.001 0.0001 0.01 0.001 Time - Seconds 0.01 Fig. 27. Transient thermal resistance junction to case © 2008 IXYS CORPORATION, All rights reserved 0.1 0.1 1 t s 1 0 0 200 400 0.0 600 A/μs 800 1000 diF/dt Fig. 26. Peak forward voltage VFR and Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.