IXGR32N170H1

IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE(sat) tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 38 A IC90 TC = 90°C 20 A 14 A 200 A IF90 ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load tSC TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 PC TC = 25°C 200 W -55 ... +150 °C ICM = 70 @ 0.8 VCES TJ μs 150 °C Tstg -55 ... +150 °C 22...130/5...30 N/lb 2500 ~V Mounting force with clamp VISOL 50/60 Hz, 1 minute Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s °C 300 Weight 5 Symbol Test Conditions BVCES VGE(th) IC IC ICES VCE = 0.8 • VCES VGE = 0 V, Note 1 VCE = 0 V, VGE = ±20 V VCE(sat) IC = IT, VGE = 15 V Notes 2, 3 © 2005 IXYS All rights reserved C G = Gate, E = Emitter E ISOLATED TAB C = Collector, g Features z Electrically Isolated tab z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. = 1mA, VGE = 0 V = 250 μA, VCE = VGE IGES G A TJM FC ISOPLUS247 (IXGR) E153432 1700 3.0 TJ = 125°C TJ = 125°C 2.6 3.1 5.0 V V 100 3 μA mA ±100 nA 3.5 V V DS99318(05/05) IXGR Symbol Test Conditions gfs IC Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. = IT VCE = 10 V, Note 2 22 30 S 3670 pF 210 pF Cres 41 pF Qg 155 nC 28 nC 52 nC Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IT VGE = 15 V, VCE = 0.5 VCES Qgc Inductive load, TJ = 25°°C 45 ns tri IC = IT, VGE = 15 V 38 ns td(off) RG = 2.7 Ω, VCE = 0.8 VCES Note 4 td(on) tfi Eoff td(on) tri Eon td(off) 270 500 ns 250 500 ns 10.6 20 mJ Inductive load, TJ = 125°°C 48 ns IC = IT, VGE = 15 V RG = 2.7 Ω, VCE = 0.8 VCES Note 4 42 ns 6.0 mJ 360 ns tfi 560 ns Eoff 13.6 mJ 0.15 RthCK Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 20A, VGE = 0 V, Note 2 TJ = 150°C VTO ISOPLUS247 Outline 0.65 K/W RthJC For conduction power losses only 2.85 2.9 V V 2.1 V 40 m Ω rFO TJ = 150°C IRM IF = 20A, VGE = 0 V, VR = 1200 V TJ = 125°C -diF/dt = 450 A/μs 23 27 A A TJ = 125°C 230 400 ns ns t rr 1.5 K/W RthJC Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % 3. Test current IT = 21 A. 4. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG. 5. See IXGH32N170 datasheets for additional IGBT characteristics. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 32N170H1 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.