IXGR32N90B2D1

Advance Technical Information HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE(sat) tfi typ IXGR 32N90B2D1 Electrically Isolated Base Symbol Test Conditions VCES TJ = 25OC to 150OC 900 V VCGR TJ = 25OC to 150OC; RGE = 1 MΩ 900 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25OC 47 A O 22 A 200 A G = Gate E = Emitter ICM = 64 A Features W y Electrically isolated mounting tab y High frequency IGBT y High current handling capability y MOS Gate turn-on IC110 Maximum Ratings = 900 V = 47 A = 2.9 V = 150 ns TC = 110 C ICM TC = 25 C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125OC, RG = 10 Ω Clamped inductive load: VCL < 600V PC TC = 25OC O 160 TJ -55 ... +150 O TJM 150 O Tstg -55 ... +150 O 300 O Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60Hz, RMS, T= I minute Iisol < 1mA FC Mounting force Test Conditions VGE(th) IC = 250 μA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = IT, VGE = 15 V, Note 1 © 2005 IXYS All rights reserved C C C 2500 3000 V~ V~ 20..120/4.5..26 N/lb 5 g Weight Symbol C Characteristic Values (TJ = 25OC unless otherwise specified) min. typ. max. 3.0 TJ = 150OC TJ = 125OC 2.1 5.0 V 300 1.5 μA mA ±100 nA 2.9 V V ISOPLUS247 (IXGR) E153432 G C E ISOLATED TAB C = Collector - drive simplicity Applications y PFC circuits y Uninterruptible power supplies (UPS) y Switched-mode and resonant-mode power supplies y AC motor speed control y DC servo and robot drives y DC choppers Advantages y High power density y Very fast switching speeds for high frequency applications DS99457(12/05) IXGR 32N90B2D1 Symbol gfs Test Conditions Characteristic Values (TJ = 25OC unless otherwise specified) min. typ. max. IC = IT; VCE = 10 V, 18 Cies Coes S 1790 pF 146 pF C res 49 pF Qg 89 nC 15 nC Qgc 34 nC td(on) 20 ns tri 22 ns Qge td(off) tfi Eoff VCE = 25 V, VGE = 0 V, f = 1 MHz 28 IC = IT , VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25OC 260 IC = IT , VGE = 15 V 150 VCE = 720 V, RG = Roff = 5 Ω 400 ns 4.5 mJ ns 2.2 td(on) 20 ns tri 22 ns 3.8 mJ IC = IT , VGE = 15 V 360 ns VCE = 720 V, RG = Roff = 5 Ω 330 ns 5.75 mJ Eon td(off) tfi Eoff Inductive load, TJ = 125OC RthJC 0.8 K/W RthCS ISOPLUS247 Outline 0.15 1- GATE 2 - COLLECTOR / CATHODE 3 - EMITTER / ANODE 4 - NO CONNECTION K/W Ultrafast Diode Symbol Conditions Maximum Ratings IFRMS 60 A IF110 TC = 110OC 22 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 30 A IRM t rr IF = 50 A; diF/dt = -100 A/μs; TVJ = 100OC VR = 100 V; VGE = 0 V TVJ = 125OC 2.75 V V 11.4 A ns 1.8 5.5 190 RthJC RthCS 0.15 1.1 K/W K/W Notes: 1. Pulse test: Pulse width < 300 μs, duty cycle < 2 %; 2. Test current IT = 32 A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXGR 32N90B2D1 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 70 240 VGE = 15V VGE = 15V 13V 11V 60 50 9V I C - Amperes I C - Amperes 13V 200 40 30 7V 20 11V 160 120 9V 80 7V 40 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 Fig. 3. Output Characteristics @ 125 ºC 14 16 18 20 1.5 VGE = 15V 60 VGE = 15V 1.4 VC E (sat)- Normalized 13V 11V 50 I C - Amperes 12 Fig. 4. Dependence of V CE(sat) on Tem perature 70 9V 40 7V 30 20 10 I C = 64A 1.3 1.2 1.1 I C = 32A 1.0 0.9 I C = 16A 0.8 5V 0 0.7 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 V CE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 6 140 5.5 I C = 64A 5 32A 16A TJ = 25ºC 120 100 4.5 I C - Amperes VC E - Volts 10 V C E - Volts V C E - Volts 4 3.5 3 80 60 40 TJ = 125ºC 20 -40ºC 25ºC 2.5 2 0 1.5 6 7 8 9 10 11 12 13 V G E - Volts © 2005 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGR 32N90B2D1 Fig. 8. Gate Charge Fig. 7. Transconductance 35 16 30 14 I C = 32A 12 20 VG E - Volts 25 g f s - Siemens VCE = 450V T J = -40ºC 25ºC 15 125ºC 10 I G = 10mA 10 8 6 4 5 2 0 0 0 20 40 60 80 0 100 10 20 I C - Amperes 30 40 50 60 70 80 90 100 800 900 Q G - nanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 10000 70 f = 1 MHz 60 I C - Amperes Capacitance - p F C ies 1000 C oes 50 40 30 100 TJ = 125ºC 20 R G = 10Ω 10 C res dV/dT < 10V/ns 0 10 0 5 10 15 20 25 30 35 100 40 200 300 400 V C E - Volts 500 600 700 V C E - Volts Fig. 11. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 1 0.1 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXGR 32N90B2D1 Fig. 12. Dependence of Turn-off Energy Loss on Gate Resistance Fig. 13. Dependence of Turn-on Energy Loss on Gate Resistance 18 16 16 14 12 E o n - MilliJoules E o f f - MilliJoules TJ = 125º C I C = 64A 14 TJ = 125º C 10 VGE = 15V VCE = 720V 8 I C = 32A 6 12 VGE = 15V 10 I C = 64A VCE = 720V 8 6 I C = 32A 4 4 2 2 I C = 16A 0 5 10 15 20 25 30 35 40 45 I C = 16A 0 0 0 50 5 10 15 R G - Ohms Fig. 14. Dependence of Turn-off Energy Loss on Collector Current 30 35 40 45 50 9 R G = 5Ω 14 12 TJ = 125ºC VGE = 15V 7 E o n - MilliJoules VCE = 720V 10 8 6 TJ = 25ºC 4 TJ = 125ºC R G = 5Ω 8 VGE = 15V E o f f - MilliJoules 25 Fig. 15. Dependence of Turn-on Energy Loss on Collector Current 16 VCE = 720V 6 5 4 TJ = 25ºC 3 2 2 1 0 0 10 20 30 40 50 60 70 10 20 30 40 50 60 I C - Amperes I C - Amperes Fig. 16. Dependence of Turn-off Energy Loss on Tem perature Fig. 17. Dependence of Turn-on Energy Loss on Tem perature 16 70 10 12 R G = 5Ω 9 R G = 5Ω VGE = 15V 8 VGE = 15V 7 VCE = 720V VCE = 720V I C = 64A 10 8 I C = 32A 6 E o n - MilliJoules 14 E o f f - MilliJoules 20 R G - Ohms I C = 64A 6 5 IC = 32A 4 3 4 2 2 I C = 16A 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade © 2005 IXYS All rights reserved 105 115 125 IC = 16A 1 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 IXGR 32N90B2D1 Fig. 18. Dependence of Turn-off Sw itching Tim e on Gate Resistance Fig. 19. Dependence of Turn-on Sw itching Tim e on Gate Resistance 550 400 360 I C = 16A, 32A, 64A 425 350 IC = 32A, 16A 340 375 330 350 320 4 6 8 10 12 14 16 18 35 120 30 25 60 20 30 I C = 16A 15 20 0 4 6 8 10 12 14 16 R G - Ohms 18 20 Fig. 21. Dependence of Turn-on Sw itching Tim e on Collector Current Fig. 20. Dependence of Turn-off Sw itching Tim e on Collector Current 500 30 tfi - - - - - td(off) 450 28 t d ( o n ) - Nanoseconds RG = 5Ω, VGE = 15V V CE = 720V 400 350 T J = 125 ºC 300 250 T J = 25 ºC 200 35 40 45 50 55 60 60 T J = 125 ºC 20 50 18 40 16 30 T J = 25 ºC 14 10 30 70 22 12 25 80 V CE = 720V 24 100 20 90 RG = 5Ω, VGE = 15V 26 150 15 100 tri - - - - td(on) 20 10 0 10 65 20 30 40 50 Fig. 22. Dependence of Turn-off Sw itching Tim e on Tem perature 40 150 tri - - - - - td(on) 300 250 I C = 64A, 32A, 16A 200 td(off) tfi - - - - - R G = 5Ω , VGE = 15V RG = 5Ω , VGE = 15V 35 125 V CE = 720V 30 100 I C = 64A 25 75 IC = 32A 20 50 15 25 VCE = 720V IC = 16A 100 10 35 45 55 65 75 85 95 105 115 125 0 25 T J - Degrees Centigrade 35 45 55 65 75 85 95 105 115 125 T J - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 t r i - Nanoseconds t d ( o n ) - Nanoseconds I C = 64A, 32A, 16A 25 70 Fig. 23. Dependence of Turn-on Sw itching Tim e on Tem perature 400 150 60 I C - Amperes I C - Amperes 350 t r i - Nanoseconds t d ( o f f ) / t f i - Nanoseconds 90 IC = 32A R G - Ohms t d ( o f f ) / t f i - Nanoseconds 150 IC = 64A V CE = 720V t r i - Nanoseconds 370 t f i - Nanoseconds 475 400 T J = 125ºC, V GE = 15V 40 380 V CE = 720V 450 180 tri - - - - - td(on) 390 T J = 125ºC, V GE = 15V 500 45 t d ( o n ) - Nanoseconds 525 t d ( o f f ) - Nanoseconds tfi - - - - - td(off) IXGR 32N90B2D1 Ultrafast Diode Characteristics 70 A 60 IF 5 60 μC TVJ=150°C 50 T =100°C VJ TVJ= 25°C 40 Qr 4 50 IRM IF= 60A IF= 30A IF= 15A 3 30 TVJ= 100°C VR = 600V A TVJ= 100°C VR = 600V IF= 60A IF= 30A IF= 15A 40 30 2 20 20 1 10 10 0 0 1 2 3 V 0 100 4 0 A/μs 1000 -diF/dt VF Fig. 25. Reverse recovery charge Qr versus -diF/dt Fig. 24. Forward current IF versus VF 2.0 220 600 A/μs 800 1000 -diF/dt 1.2 TVJ= 100°C IF = 30A V tfr VFR trr IF= 60A IF= 30A IF= 15A 180 IRM 400 120 200 1.0 200 Fig. 26. Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 600V ns 1.5 Kf 0 tfr VFR 80 μs 0.8 160 40 Qr 0.5 0.4 140 0.0 120 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/μs 0 400 -diF/dt Fig. 27. Dynamic parameters Qr, IRM versus TVJ Fig. 28. Recovery time trr versus -diF/dt 2 DSEP 30-12AR 1 0.0 600 A/μs 800 1000 diF/dt Fig. 29. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation for nonisolated diode (DSEP 30-12A): DSEP 30-12A K/W i ZthJC 1 2 3 0.1 Rthi (K/W) ti (s) 0.465 0.179 0.256 0.0052 0.0003 0.0397 Constants for ZthJC calculation for isolated diode (DSEP 30-12AR): 0.01 i 0.001 0.00001 200 0.0001 0.001 0.01 Fig. 30. Transient thermal resistance junction-to-case © 2005 IXYS All rights reserved 0.1 s t 1 1 2 3 4 Rthi (K/W) ti (s) 0.368 0.1417 0.0295 0.5604 0.0052 0.0003 0.0004 0.0092 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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