IXGR40N60B2D1

HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE(sat) tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet Symbol Test Conditions D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 33 A 25 A 200 A IF110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V PC TC = 25°C (IXGR40N60B2D1) ICM = 80 A 167 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 V 300 °C G 50/60 Hz RMS, t = 1m C G = Gate, E = Emitter E (ISOLATED TAB) C = Collector, Features z TJ VISOL ISOPLUS247 (IXGR) E153432 z z z z DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s z z Weight 6 g z z z Symbol VGE(th) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 30 A, VGE = 15 V © 2004 IXYS All rights reserved Advantages z = 250 µA, VCE = VGE IC 3.0 TJ = 25°C TJ = 150°C TJ = 25°C 5.0 V z 50 1 µA mA ±100 nA 1.9 V Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers z Easy assembly High power density Very fast switching speeds for high frequency applications DS99162A(05/04) IXGR 40N60B2 IXGR 40N60B2D1 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 30 A; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 20 Cies Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 36 S 2560 pF 210 pF 54 pF 100 nC 15 nC 36 nC 18 ns 20 ns Cres Qg Qge IC = 30 A, VGE = 15 V, VCE = 300 V Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω tfi 130 200 ns 82 150 ns Eoff 0.4 0.8 mJ td(on) 18 ns tri Eon td(off) tfi Inductive load, TJ = 125°°C IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 Ω Eoff 20 ns 0.3 mJ 240 ns 150 ns 1.10 mJ RthJC ISOPLUS 247 Outline 0.75 K/W RthCK 0.15 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 30 A, VGE = 0 V, Pulse test t ≤ 300 µs, duty cycle d ≤ 2 % IRM t rr IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C VR = 100 V TJ = 100°C 100 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 25 TJ =150°C 0.9 RthJC 1.6 2.5 V V 4 A ns ns 1.1 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXGR 40N60B2 IXGR 40N60B2D1 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 60 50 VGE = 15V 13V 9V 180 11V 150 40 I C - Amperes I C - Amperes 210 VGE = 15V 13V 11V 7V 30 20 9V 120 90 7V 60 10 30 5V 5V 0 0 0.5 1 1.5 2 2.5 0 3 1 2 Fig. 3. Output Characteristics @ 125 Deg. C 4 5 6 7 Fig. 4. De pende nce of V CE(sat) on Tem perature 60 1.4 VGE = 15V 13V 11V 9V V GE = 15V 1.3 V C E (sat)- Normalized 50 I C - Amperes 3 V C E - Volts V C E - Volts 7V 40 30 20 10 5V 1.2 I C = 60A 1.1 1.0 0.9 I C = 30A 0.8 0.7 0 I C = 15A 0.6 0.5 1 1.5 2 2.5 3 -50 -25 V CE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 4 180 TJ = 25ºC 3.5 150 VC E - Volts 2.5 I C - Amperes I C = 60A 30A 15A 3 2 1.5 120 90 60 TJ = 125ºC 25ºC -40ºC 30 1 0 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 3 4 5 6 7 V G E - Volts 8 9 10 IXGR 40N60B2 IXGR 40N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 60 3 I C = 60A 2.4 E off - milliJoules g f s - Siemens 2.7 TJ = -40ºC 25ºC 125ºC 50 40 30 20 TJ = 125ºC VGE = 15V VCE = 400V 2.1 1.8 1.5 I C = 30A 1.2 0.9 10 I C = 15A 0.6 0.3 0 0 30 60 90 120 150 3 180 12 15 18 21 24 Fig. 9. Dependence of Turn-Off Energy on Ic Fig. 10. Dependence of Turn-Off Energy on Tem perature 27 30 2.7 R G = 3.3Ω VGE = 15V VCE = 400V 2.1 R G = 3.3Ω VGE = 15V VCE = 400V 2.4 2.1 E off - milliJoules 2.4 1.8 1.5 TJ = 125ºC 1.2 0.9 0.6 I C = 60A 1.8 1.5 1.2 I C = 30A 0.9 0.6 TJ = 25ºC 0.3 0.3 0 I C = 15A 0 15 20 25 30 35 40 45 50 55 60 25 35 I C - Amperes 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 300 600 td(off) tfi - - - - - - 500 TJ = 125ºC VGE = 15V VCE = 400V 450 400 350 300 I C = 15A 250 I C = 30A I C = 60A 200 td(off) tfi - - - - - - 275 Switching Time - nanosecond 550 Switching Time - nanosecond 9 R G - Ohms 2.7 E off - MilliJoules 6 I C - Amperes 150 100 R G = 3.3Ω VGE = 15V VCE = 400V 250 225 200 TJ = 125ºC 175 150 125 TJ = 25ºC 100 75 3 6 9 12 15 18 21 24 27 30 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. 15 20 25 30 35 40 I C - Amperes 45 50 55 60 IXGR 40N60B2 IXGR 40N60B2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 275 15 td(off) tfi - - - - - - 200 175 I C = 15A 150 I C = 30A 125 VCE = 300V I C = 30A I G = 10mA 12 R G = 3.3Ω VGE = 15V VCE = 400V 225 VG E - Volts Switching Time - nanosecond 250 I C = 60A 9 6 3 100 0 75 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V C E - Volts F ig . 13. M aximu m Tran sien t Th ermal R esistan ce 0.8 0.7 R (th) J C - (ºC/W) 0.6 0.5 0.4 0.3 0.2 0 .1 0 1 10 10 0 Puls e W idth - millis ec onds © 2004 IXYS All rights reserved 100 0 IXGR 40N60B2 IXGR 40N60B2D1 1000 60 A nC 50 IF TVJ= 100°C VR = 300V A 25 800 Qr IF= 60A IF= 30A IF= 15A 40 600 TVJ=150°C 30 TVJ= 100°C VR = 300V IF= 60A IF= 30A IF= 15A IRM 20 30 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 2 5 0 100 3 V 0 A/µs 1000 -diF/dt VF Fig. 17 Forward current IF versus VF Fig. 18 Reverse recovery charge Qr versus -diF/dt 90 2.0 Kf 600 A/µs 800 1000 -diF/dt 400 1.00 TVJ= 100°C IF = 30A V VFR 15 trr 1.5 200 Fig. 19 Peak reverse current IRM versus -diF/dt 20 TVJ= 100°C VR = 300V ns 0 µs tfr 0.75 VFR tfr 80 IF= 60A IF= 30A IF= 15A 1.0 IRM 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 20 Dynamic parameters Qr, IRM versus TVJ Fig. 21 Recovery time trr versus -diF/dt 10 0.00 600 A/µs 800 1000 diF/dt Fig. 22 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 1 2 3 4 ZthJC 0.1 Rthi (K/W) ti (s) 0.436 0.482 0.117 0.115 0.0055 0.0092 0.0007 0.0418 0.01 0.001 0.0001 0.00001 DSEP 2x31-06B 0.0001 0.001 0.01 s 0.1 1 t IXYS reserves the right to change limits, test conditions, and dimensions. 906 Fig. 23 Transient thermal resistance junction to case