IXGR48N60B3D1

Preliminary Technical Information IXGR48N60B3* IXGR48N60B3D1 GenX3TM 600V IGBTs (Electrically Isolated Back Surface) *Obsolete Part Number VCES = IC25 = VCE(sat) ≤ tfi(typ) = 600V 60A 2.1V 116ns Medium-Speed Low-Vsat PT IGBTs 5-40 kHz Switching IXGR_B3 IXGR_B3D1 Symbol Test Conditions VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 IC110 IF110 TC = 25°C TC = 110°C TC = 110°C (48N60B3D1) 60 27 27 A A A ICM TC = 25°C, 1ms 280 A SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A (RBSOA) Clamped Inductive Load PC TC = 25°C ISOPLUS247TM E153432 Maximum Ratings @ ≤ VCE G -55 ... +150 °C TJM 150 °C z Tstg -55 ... +150 °C z z TL 1.6mm (0.062 in.) from Case for 10s 300 °C z TSOLD Plastic Body for 10 seconds 260 °C z FC Mounting Force 20..120 / 4.5..27 N/lb. VISOL 50/60 Hz, RM, t = 1min 2500 V~ 5 g z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 z V 5.5 48N60B3D1 V TJ = 125°C z z 1.75 mA z 2.1 V V z z z z z © 2011 IXYS CORPORATION, All Rights Reserved Silocon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Optimized for Low Conduction and Switching Losses 2500V~ Electrical Isolation Anti-Parallel Ultra Fast Diode Square RBSOA High Power Density Low Gate Drive Requirement Applications 25 μA ±100 nA 1.77 1.74 E = Emitter Advantages z 48N60B3 Isolated Tab Features W Weight E G = Gate C = Collector 150 TJ C Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99743B(02/11) IXGR48N60B3 IXGR48N60B3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified Characteristic Values Min. Typ. Max. gfs 20 IC = 30A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz pF 170 pF 48N60B3D1 200 45 pF pF 115 nC 21 nC 40 nC 22 ns 25 ns Qg IC = 40A, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Eon td(off) tfi S 2980 Cres Qge 30 48N60B3 Cies Coes ISOPLUS247 (IXGR) Outline Inductive Load, TJ = 25°C IC = 30A, VGE = 15V 0.84 VCE = 480V, RG = 5Ω 130 Note 2 Eoff td(on) mJ 200 ns 116 200 ns 0.66 1.20 mJ 19 ns 25 ns IC = 30A, VGE = 15V 1.71 mJ VCE = 480V, RG = 5Ω 190 ns tri Inductive Load, TJ = 125°C Eon td(off) tfi Note 2 Eoff 157 ns 1.30 mJ RthJC 0.83 °C/W RthCS 0.15 °C/W Reverse Diode (FRED) (D1 Version ONLY) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified VF IRM trr IF = 30A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. 2.8 TJ = 150°C V V 4 A 100 ns 1.5 1.5 °C/W °C/W IF = 30A, VGE = 0V, VR = 100V -diF/dt = 100A/μs IF = 1A, -di/dt = 100A/μs, VR = 30V TJ = 100°C RthJC RthCS Notes: 1.6 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.