IXGR48N60C3D1

IXGR48N60C3D1 GenX3TM 600V IGBT with Diode VCES IC25 VCE(sat) tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 56 A IC110 TC = 110°C 26 A ID110 TC = 110°C ICM TC = 25°C, 1ms IA EAS ISOPLUS 247TM 27 A 230 A TC = 25°C 30 A TC = 25°C 300 mJ SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω (RBSOA) Clamped Inductive Load PC TC = 25°C ICM = 100 A @ VCE ≤ 600 V 125 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ G z z z z 300 °C z TSOLD Plastic Body for 10 Seconds 260 °C z VISOL 50/60 Hz RMS, t = 1min 2500 V~ FC Mounting Force 20..120 / 4.5..27 N/lb. 5 g VGE(th) IC ICES VCE = VCES VGE = 0V Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. = 250μA, VCE = VGE IGES VCE = 0V, VGE = ±20V VCE(sat) IC 3.0 TJ = 125°C = 30A, VGE = 15V, Note 1 TJ = 125°C © 2009 IXYS CORPORATION, All rights reserved 2.3 1.8 5.5 V 300 1.75 μA mA ±100 nA 2.7 V V C = Collector Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation Avalanche Rated Square RBSOA Anti-Parallel Ultra Fast Diode Fast Switching International Standard Package Advantages z z Test Conditions ISOLATED TAB Features 1.6mm (0.062 in.) from Case for 10s Symbol E G = Gate E = Emitter TL Weight C High Power Density Low Gate Drive Requirement Applications z z z z z z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99810B(01/09) IXGR48N60C3D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. gfs IC = 30A VCE = 10V, Note 1 20 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Inductive Load, TJ = 25°C IC = 30A, VGE = 15V 30 S 1960 220 66 pF pF pF 77 16 32 nC nC nC 19 ns 26 0.41 ns mJ 60 VCE = 400V, RG = 3Ω Eoff 0.23 td(on) tri Eon td(off) tfi Eoff 19 26 0.65 92 95 0.57 IC = 30A, VGE = 15V VCE = 400V, RG = 3Ω ns ns 0.55 0.15 Reverse Diode (FRED) mJ ns ns mJ ns ns mJ 1.0 RthJC RthCS Symbol 100 38 Inductive Load, TJ = 125°C ISOPLUS247 (IXGR) Outline °C/W °C/W Characteristic Values (TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max. Test Conditions VF IF = 30A, VGE = 0V, Note 1 TJ =25°C IRM trr IF = 30A, VGE = 0V, -diF/dt =100A/μs, VR = 100V IF = 1A, -di/dt = 100A/μs; VR = 30V TJ = 100°C TJ =100°C 100 25 2.7 V 4 A ns ns 1.5 °C/W RthJC Note 1: Pulse test, t ≤ 300μs, Duty cycle, d ≤ 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR48N60C3D1 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 60 300 VGE = 15V 13V 11V 55 50 270 V GE = 15V 240 13V 210 40 IC - Amperes IC - Amperes 45 35 30 9V 25 20 180 150 11V 120 90 9V 15 60 10 7V 5 30 7V 0 0 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 2 4 6 60 12 14 16 18 20 1.2 VGE = 15V 13V 11V 55 50 VGE = 15V 1.1 VCE(sat) - Normalized 45 9V 40 35 30 25 20 15 I C = 60A 1.0 0.9 I C = 30A 0.8 0.7 7V 10 0.6 I C = 15A 5 0 0.5 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 25 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 100 TJ = 25ºC 90 4.5 80 70 IC - Amperes 4.0 VCE - Volts 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125ºC IC - Amperes 8 VCE - Volts VCE - Volts I C = 60A 30A 15A 3.5 3.0 60 TJ = -125ºC 25ºC - 40ºC 50 40 30 20 2.5 10 2.0 0 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All rights reserved 13 14 15 5 5.5 6 6.5 7 7.5 VGE - Volts 8 8.5 9 9.5 10 IXGR48N60C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 50 16 TJ = - 40ºC 45 14 VCE = 300V 12 I G = 10 mA I C = 30A 40 25ºC 30 VGE - Volts g f s - Siemens 35 125ºC 25 20 10 8 6 15 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0 120 20 30 40 50 60 70 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 80 110 f = 1 MHz 100 Cies 90 80 1,000 IC - Amperes Capacitance - PicoFarads 10 IC - Amperes Coes 100 Cres 70 60 50 40 30 TJ = 125ºC 20 RG = 3Ω dV / dt < 10V / ns 10 10 0 5 10 15 20 25 30 35 0 200 40 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maxim u m Tran sient Th erm al Im ped an c e Z(th)JC - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 P uls e W id th - S e c o nd s IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_48N60C3D1(5D)01-23-09-B IXGR48N60C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 2.6 2.0 2.2 Eoff --- 2.4 1.8 2.0 TJ = 125ºC , VGE = 15V 2.2 2.4 VCE = 400V 1.0 1.2 0.8 1.0 I C = 30A 0.6 0.8 0.4 0.6 I C = 15A 0.2 0.4 0.0 5 10 15 20 25 30 1.4 1.4 1.2 1.2 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 15 35 20 25 30 I C = 60A 2.0 130 1.8 125 1.4 1.2 1.2 1.0 1.0 0.6 0.6 - MilliJoules 0.8 I C = 30A on 0.8 0.4 0.4 0.2 I C = 15A 0.0 35 45 55 65 75 350 325 115 VCE = 400V 275 85 95 105 115 110 250 I C = 60A 105 175 90 150 I C = 15A 75 0.0 125 70 50 0 5 10 75 60 70 50 65 40 60 TJ = 25ºC t f - Nanoseconds 85 70 120 110 RG = 3Ω , VGE = 15V V CE = 400V 120 100 100 90 I C = 60A 80 80 I C = 30A 60 70 I C = 15A 40 60 55 20 50 40 35 45 I C - Amperes © 2009 IXYS CORPORATION, All rights reserved 50 55 60 20 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 50 125 t d(off) - Nanoseconds 95 80 35 30 td(off) - - - - tf 140 100 TJ = 125ºC 30 25 160 105 t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - 80 25 20 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature 90 20 15 RG - Ohms 100 15 125 100 RG = 3Ω , VGE = 15V 30 200 I C = 30A 95 75 VCE = 400V 90 225 100 0.2 110 110 300 80 140 120 60 120 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 55 td(off) - - - TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 130 50 tf 85 25 45 t d(off) - Nanoseconds 1.4 t f - Nanoseconds 1.6 VCE = 400V E Eoff - MilliJoules ---- RG = 3Ω , VGE = 15V 1.6 40 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.0 1.8 35 I C - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature Eon 1.0 TJ = 125ºC, 25ºC RG - Ohms Eoff 1.6 V CE = 400V 0.0 0.2 0 1.8 - MilliJoules 1.4 ---- Eon RG = 3Ω , VGE = 15V on 1.2 - MilliJoules 1.6 on 1.4 E off E 1.8 I C = 60A E 1.6 2.0 1.6 2.0 Eoff - MilliJoules 1.8 Eoff - MilliJoules Eon - IXGR48N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 140 50 t r - Nanoseconds 40 I C = 60A 80 35 60 30 40 25 20 20 I C = 15A, 30A 0 5 10 15 15 20 25 30 25 td(on) - - - - tr 90 RG = 3Ω , VGE = 15V 24 80 VCE = 400V 25ºC < TJ < 125ºC 23 70 22 60 21 50 20 40 19 30 18 20 17 10 16 0 35 t d(on) - Nanoseconds 100 t d(on) - Nanoseconds VCE = 400V 0 26 100 45 TJ = 125ºC, VGE = 15V t r - Nanoseconds 120 110 td(on) - - - - tr 15 15 20 25 30 35 40 45 50 55 60 I C - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 80 25 70 24 t r - Nanoseconds I C = 60A td(on) - - - - tr 23 RG = 3Ω , VGE = 15V 50 22 VCE = 400V 40 21 I C = 30A 30 20 20 19 10 18 I C = 15A 0 25 35 45 55 65 75 85 95 105 t d(on) - Nanoseconds 60 115 17 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_48N60C3D1(5D)01-23-09-B IXGR48N60C3D1 1000 60 A 50 IF 30 TVJ= 100°C nC V = 300V R 800 Qr TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 40 600 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A 0 1 2 5 0 100 3 V A/μs 1000 -diF /dt VF Fig. 21. Forward current IF versus VF Fig. 22. Reverse recovery charge Qr versus -diF/dt 2.0 90 Kf IF= 60A IF= 30A IF= 15A IRM 400 600 A/μs 800 -diF /dt 1000 1.00 TVJ= 100°C IF = 30A μs VFR tfr 80 1.0 200 Fig. 23. Peak reverse current IRM versus -diF/dt V V FR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 tfr 0.75 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 °C 160 60 0 200 400 600 T VJ 800 A/μs 1000 -diF /dt Fig. 24. Dynamic parameters Qr, IRM versus TVJ Fig. 25. Recovery time trr versus -diF/dt 1 K/W 1 ZthJC - K/W 0.1 Z thJC 0.1 0.01 0.01 0.001 0.00001 0.001 0.0001 DSEP 29-06 0.0001 0.001 0.01 0.001 0.01 Time - Seconds Fig. 27. Transient thermal resistance junction to case © 2009 IXYS CORPORATION, All rights reserved 0.1 0.1 t s 1 1 0 0 200 400 0.00 600 A/μs 800 1000 diF /dt Fig. 26. Peak forward voltage VFR and tfr versus diF/dt Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.