IXGR50N60B2D1

HiPerFASTTM IGBT ISOPLUS247TM IXGR 50N60B2 IXGR 50N60B2D1 B2-Class High Speed IGBTs (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 68 A = 2.2 V = 65 ns Preliminary Data Sheet IXGR_B2 IXGR_B2D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 68 A IC110 TC = 110°C 36 A IF110 TC = 110°C (50N60B2D1 Diode) 39 A ICM TC = 25°C, 1 ms 300 A ISOPLUS247 (IXGR) G G = Gate E = Emitter VGE = 15 V, TVJ = 125°C, RG = 10 Ω (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C ICM = 100 A z z z z 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ VISOL Weight 50/60 Hz RMS, t = 1m 2500 5 V Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 z z z °C (ISOLATED TAB) C = Collector DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z g E Features z SSOA C z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Symbol Test Conditions VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 40 A, VGE = 15 V Note 1 © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 3.0 50N60B2 50N60B2D1 TJ = 125°C 1.8 1.7 5.0 V 50 650 µA µA ±100 nA 2.2 V V z z z Easy assembly High power density Very fast switching speeds for high frequency applications DS99144A(05/04) IXGR 50N60B2 IXGR 50N60B2D1 Symbol gfs Cies Coes Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IC = 40 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz 50N60B2 55 S 3500 240 pF pF 280 50 pF pF 50N60B2D1 C res 140 nC Qge Qgc IC = 40 A, VGE = 15 V, VCE = 0.5 VCES 23 44 nC nC td(on) Inductive load, TJ = 25°C 18 ns tri IC = 40 A, VGE = 15 V td(off) VCE = 480 V, RG = Roff = 5.0 Ω Qg 25 RthJ-DCB RthJC RthCS Inductive load, TJ = 125°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 5.0 Ω (Note 2) (Note 3) Reverse Diode (FRED) Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM t rr ns 65 Eoff td(on) tri Eon td(off) tfi Eoff ns 190 300 tfi ISOPLUS 247 Outline ns 0.55 0.85 mJ 18 25 0.9 290 140 1.55 ns ns mJ ns ns mJ 0.31 K/W 0.62 K/W 0.15 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 RthJC 2.0 1.39 V 8.3 A ns 0.85 K/W Notes 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate. 3: RthJC is the thermal resistance junction-to-external side of DCB substrate. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 50N60B2 IXGR 50N60B2D1 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 320 80 VGE = 15V 13V 11V 70 9V 60 11V 240 7V I C - Amperes I C - Amperes VGE = 15V 13V 280 50 40 30 6V 20 9V 200 160 120 7V 80 10 40 5V 5V 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 Fig. 3. Output Characteristics @ 125 Deg. C 5 6 7 8 Fig. 4. De pende nce of V CE(sat) on Tem perature 80 1.4 VGE = 15V 13V 11V 9V V GE = 15V 1.3 60 V C E (sat)- Normalized 70 I C - Amperes 4 V C E - Volts V C E - Volts 7V 50 40 6V 30 20 10 1.2 I C = 80A 1.1 1.0 0.9 I C = 40A 0.8 0.7 5V 0 I C = 20A 0.6 0.5 1 1.5 2 2.5 3 -50 -25 0 V CE - Volts 25 50 75 100 125 150 8 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 3.7 200 TJ = 25ºC 180 3.4 160 I C = 80A 40A 20A 2.8 2.5 I C - Amperes VC E - Volts 3.1 2.2 140 120 100 80 TJ = 125ºC 25ºC -40ºC 60 1.9 40 1.6 20 1.3 0 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 4 4.5 5 5.5 6 6.5 V G E - Volts 7 7.5 IXGR 50N60B2 IXGR 50N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 80 5 4 50 40 30 I C = 80A 3.5 E off - milliJoules g f s - Siemens 60 TJ = 125ºC VGE = 15V VCE = 480V 4.5 TJ = -40ºC 25ºC 125ºC 70 3 2.5 I C = 40A 2 1.5 20 1 10 0 0 0 20 40 60 80 100 120 140 160 180 200 5 10 15 25 30 35 40 45 R G - Ohms Fig. 9. Dependence of Turn-Off Energy on IC Fig. 10. Dependence of Turn-Off Energy on Tem perature 50 4 R G = 5Ω R G = 24.4 Ω - - - VGE = 15V VCE = 480V 3 3 2.5 TJ = 125ºC 2 1.5 TJ = 25ºC 1 2 1 0 0 40 50 I C = 40A 1.5 0.5 30 I C = 80A 2.5 0.5 20 R G = 5Ω R G = 24.4Ω - - VGE = 15V VCE = 480V 3.5 E off - milliJoules 3.5 60 70 80 I C = 20A 25 35 45 I C - Amperes 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC 400 1000 td(off) tfi - - - - - - Switching Time - nanosecond Switching Time - nanosecond 20 I C - Amperes 4 E off - MilliJoules I C = 20A 0.5 TJ = 125ºC VGE = 15V VCE = 480V 500 I C = 20A I C = 40A I C = 80A td(off) tfi - - - - - - 350 R G = 5Ω VGE = 15V VCE = 480V 300 250 TJ = 125ºC 200 150 TJ = 25ºC 100 100 50 0 5 10 15 20 25 30 35 40 45 20 50 30 R G - Ohms 40 50 60 70 80 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 50N60B2 IXGR 50N60B2D1 Fig. 13. De pendence of Turn-Off Sw itching Tim e on Te m perature Fig. 14. Reverse -Bias Safe Operating Are a 350 90 td(off) tfi - - - - - - 80 R G = 5Ω VGE = 15V VCE = 480V 250 70 60 200 I C = 40A 150 I C - Amperes Switching Time - nanosecond 300 I C = 20A I C = 80A 100 50 40 TJ = 125º C 30 R G = 10Ω dV/dT < 10V/ns 20 50 10 0 0 25 35 45 55 65 75 85 95 105 115 125 100 200 300 TJ - Degrees Centigrade V 500 600 - Volts Fig. 16. Capacitance Fig. 15. Gate Charge 10000 16 VCE = 300V I C = 40A I G = 10mA 14 f = 1 MHz Capacitance - p F 12 VG E - Volts 400 CE 10 8 6 C ies 1000 C oes 100 4 2 C res 0 10 0 30 60 90 120 150 0 5 10 15 20 25 30 35 40 V C E - Volts Q G - nanoCoulombs Fig . 17. M axim u m T r an s ie n t T h e r m al Re s is tan ce 0 . 70 R ( t h ) J C - ºC / W 0 . 60 0 . 50 0 . 40 0 . 30 0 . 20 0 . 10 0 . 00 1 10 10 0 Puls e W idth - millis ec onds © 2004 IXYS All rights reserved 1000 IXGR 50N60B2 IXGR 50N60B2D1 160 A 140 IF 4000 nC 120 80 TVJ= 100°C VR = 300V 3000 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V A IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V 0 A/µs 1000 -diF/dt VF 0 Fig. 19 Reverse recovery charge Qr versus -diF/dt Fig. 18 Forward current IF versus VF TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 600 A/µs 800 1000 -diF/dt 20 1.6 V VFR 15 µs tfr IF=120A IF= 60A IF= 30A 110 1.2 VFR tfr 120 1.0 400 Fig. 20 Peak reverse current IRM versus -diF/dt 140 2.0 200 10 0.8 5 0.4 IRM 100 0.5 Qr 90 0.0 80 0 40 80 120 °C 160 TVJ= 100°C IF = 60A 0 0 200 400 TVJ 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 21 Dynamic parameters Qr, IRM versus TVJ Fig. 22 Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 23 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399 0.001 0.0001 0.00001 DSEP 2x61-06A 0.0001 0.001 0.01 s 0.1 1 t Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344