IXGR50N60C2D1

HiPerFASTTM High Speed IGBT C2-Class w/ Diode IXGR50N60C2 IXGR50N60C2D1 VCES IC110 VCE(sat) tfi(typ) Symbol Test Conditions VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V = = £ = 600V 36A 2.7V 48ns Maximum Ratings VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (Limited by Leads) 75 A IC110 TC = 110C 36 A ICM TC = 25C, 1ms 300 A SSOA VGE = 15V, TVJ = 125C, RG = 10 ICM = 100 A (RBSOA) Clamped Inductive Load PC TC = 25C VCE  VCES ISOPLUS247TM G W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C  2500 V~  20..120/4.5..27 N/lb VISOL 50/60 Hz, RMS, t = 1minute FC Mounting Force TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C 5 g Weight Isolated Tab E G = Gate E = Emitter 200 TJ C C = Collector Features      Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V Electrical Isolation Very High Frequency IGBT Square RBSOA Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC = 250A, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 125C Applications 5.5 V 650 5 A mA  100 nA  TJ = 125C   © 2014 IXYS CORPORATION, All Rights Reserved 2.7 1.8 V V High Power Density Low Gate Drive Requirement   Switch-Mode and Resonant-Mode Power Supplies Uninterruptible Power Supplies (UPS) PFC Circuits AC Motor Drives DC Servo & Robot Drives DC Choppers DS99163A(02/14) IXGR50N60C2 IXGR50N60C2D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs IC = 40A, VCE = 10V, Note 1 40 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 40A, VGE = 15V, VCE = 0.5 • VCES Inductive load, TJ = 25°C IC = 40A, VGE = 15V 51 S 3700 290 50 pF pF pF 138 25 40 nC nC nC 18 25 ns ns 115 48 0.38 VCE = 0.8 • VCES, RG = 2 Note 2 Inductive load, TJ = 125°C IC = 40A, VGE = 15V VCE = 0.8 • VCES, RG = 2 Note 2 RthJC RthCS ISOPLUS247 (IXGR) Outline 150 0.70 ns ns mJ 18 25 1.4 170 60 0.74 ns ns mJ ns ns mJ 0.15 0.62 °C/W °C/W 1 2 3 - Gate - Collector - Emitter Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, VGE = 0V, -diF/dt = 100A/sTJ = 100C VR = 100 V IF = 1A, -di/dt = 200A/s, VR = 30V trr TJ = 150C 35 V V 8.3 A ns 0.85 ºC/W RthJC Notes: 2.1 1.4 1. Pulse test, t  300μs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR50N60C2 IXGR50N60C2D1 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ T J = 25ºC @ T J = 25ºC 80 320 V GE = 15V 13V 11V 70 V GE = 15V 13V 280 50 40 6V 30 11V 240 7V I C - Amperes I C - Amperes 60 9V 20 200 9V 160 120 7V 80 10 40 5V 0 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 0 2 4 Fig. 3. Output Characteristics V GE = 15V 13V 11V I C - Amperes 60 9V V GE = 15V 1.1 7V 50 40 6V 30 20 1.0 I C = 80A 0.9 I C = 40A 0.8 0.7 0.6 10 I C = 20A 5V 0 0.5 0.5 1 1.5 2 2.5 3 3.5 4 25 50 V CE - Volts 75 100 125 150 8 9 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 4.8 200 TJ = 25ºC 4.5 160 4.2 I C = 80A 40A 20A 3.9 3.6 I C - Amperes VC E - Volts 10 1.2 VC E ( s a t )- Normalized 70 8 Fig. 4. Dependence of V CE(sat) on Tem perature @ T J = 125ºC 80 6 V C E - Volts V C E - Volts 3.3 3.0 120 80 T J = 125 ºC 25 ºC 40 2.7 0 2.4 5 7 9 11 13 V G E - Volts © 2014 IXYS CORPORATION, All Rights Reserved 15 17 4 5 6 V G E - Volts 7 IXGR50N60C2 IXGR50N60C2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 70 3.0 T J = 25 ºC 60 I C = 80A 2.4 E o f f - milliJoules g f s - Siemens 50 125 ºC 40 30 20 1.8 TJ = 125ºC VGE = 15V VCE = 480V 1.2 I C = 40A 0.6 10 I C = 20A 0 0.0 0 50 100 150 200 2 4 6 8 10 12 14 I C - Amperes R G - Ohms Fig. 9. Dependence of Turn-Off Energy on Ic Fig. 10. Dependence of Turn-Off Energy on Tem perature 16 18 2.4 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 1.6 RG = 2Ω RG = 10Ω - - - V GE = 15V V CE = 480V 2 E o f f - milliJoules E o f f - MilliJoules 2 1.2 TJ = 125ºC 0.8 1.6 I C = 80A 1.2 I C = 40A 0.8 TJ = 25ºC 0.4 0.4 0 0 20 30 40 50 60 70 I C = 20A 25 80 50 I C - Amperes 100 125 Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 450 200 td(off) tfi --- --- Switching Time - nanoseconds Switching Time - nanoseconds 75 TJ - Degrees Centigrade TJ = 125ºC VGE = 15V VCE = 480V 350 250 I C = 20A I C = 40A 150 I C = 80A 50 td(off) tfi - - - - R G = 2Ω VGE = 15V VCE = 480V 160 TJ = 125ºC 120 TJ = 25ºC 80 40 2 4 6 8 10 12 14 16 18 R G - Ohms IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. 20 30 40 50 I C - Amperes 60 70 80 IXGR50N60C2 IXGR50N60C2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Reverse-Bias Safe Operating Area 90 td(off) tfi - - - - - 180 80 I C = 20A RG = 2Ω V GE = 15V V CE = 480V 160 140 70 60 120 I C - Amperes Switching Time - nanoseconds 200 I C = 80A 100 80 I C = 40A 50 40 30 T J = 125 º C 20 60 40 RG = 10Ω dv/dt < 10 I C = 20A 20 0 25 50 75 100 125 100 200 300 TJ - Degrees Centigrade V 500 600 - Volts Fig. 16. Capacitance Fig. 15. Gate Charge 16 10000 V CE = 300V IC = 40A IG = 10mA 12 f = 1 MHz Capacitance - picoFarrads 14 V G E - Volts 400 CE 10 8 6 4 Cies 1000 Coes 100 Cres 2 10 0 0 30 60 90 120 150 0 5 10 15 20 25 30 35 40 V C E - Volts Q G - nanoCoulombs Fig. 17. Maxim um Transient Therm al Resistance 0.70 Z ( t h ) J C - ºC / W 0.60 0.50 0.40 0.30 0.20 0.10 0.00 1 © 2014 IXYS CORPORATION, All Rights Reserved 10 Pulse Width - milliseconds 100 1000 IXGR50N60C2 IXGR50N60C2D1 160 A 140 IF 4000 80 TVJ= 100°C VR = 300V nC TVJ= 25°C 120 100 3000 TVJ=100°C 80 TVJ=150°C 60 IF=120A IF= 60A IF= 30A Qr TVJ= 100°C VR = 300V A IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A 60 40 20 0 0 1 0 100 V 2 A/s 1000 -diF /dt VF Fig. 18 Forward current IF versus VF Fig. 19 Reverse recovery charge Qr versus -diF/dt 140 2.0 ns 130 TVJ= 100°C VR = 300V trr 1.5 Kf 0 0 IRM 1.6 V V FR 15 s 1.2 40 tfr VFR 10 0.8 5 0.4 90 Qr 0 1000 100 0.5 0.0 600 A/s 800 -diF /dt 20 tfr IF=120A IF= 60A IF= 30A 110 400 Fig. 20 Peak reverse current IRM versus -diF/dt 120 1.0 200 80 120 °C 160 80 0 200 400 600 T VJ 800 A/s 1000 0 0 TVJ= 100°C IF = 60A 200 400 -diF /dt Fig. 21 Dynamic parameters Qr, IRM versus TVJ Fig. 22 Recovery time trr versus -diF/dt 0.0 600 A/s 800 1000 diF /dt Fig. 23 Peak forward voltage VFR and tfr versus diF/dt 1 K/W Constants for ZthJC calculation: 0.1 i Z thJC 1 2 3 4 0.01 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399 0.001 0.0001 0.00001 DSEP 2x61-06A 0.0001 0.001 0.01 0.1 s t 1 Fig. 24 Transient thermal resistance junction to case IXYS Reserves the Right to Change Limits, Test conditions, and Dimensions. IXYS REF: G_50N60C2(62) 2-18-04 Fig. 24 Transient thermal resistance junction to case