IXGR50N90B2D1

IXGR 50N90B2D1 HiPerFASTTM IGBT with Fast Diode VCES IC25 VCE(sat) tfi typ IXGR 50N90B2D1 B2-Class High Speed IGBT with Fast Diode = 900 V = 40 A = 2.9 V = 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 V CES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 T C = 25°C 40 A IC110 T C = 110°C (IGBT) 19 A IF110 T C = 110°C (diode) 22 A ICM T C = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 720V ICM = 100 A PC T C = 25°C 100 W Electrically isolated tab G C G = Gate E = Emitter E ISOLATED TAB C = Collector TAB = Collector Features -55 ... +150 °C International standard package outline TJM 150 °C High current handling capability Tstg -55 ... +150 °C MOS Gate turn-on 300 °C Drive simplicity 2500 V 20..120 / 4.5..25 N/lb TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, t = 1ms FC Mounting force (PLUS247) ISOPLUS247 Weight 5 g Rugged NPT structure UL recognized Molding epoxies meet UL 94 V-0 flammability classification Applications Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) IC = 250 μA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ± 20 V VCE(sat) IC = IT, VGE = 15 V, Note 1, 2 TJ = 125°C © 2006 IXYS All rights reserved Characteristic Values Min. Typ. Max. 3.0 TJ = 150°C 2.2 Capacitor discharge & pulser circuits AC motor speed control DC servo and robot drives 5.0 V 50 1 μA mA Uninterruptible power supplies (UPS) ± 100 nA Switched-mode and resonant-mode power supplies 2.9 V DC choppers DS99528(03/06) IXGR 50N90B2D1 Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs IC Characteristic Values Min. Typ. Max. = IT ; VCE = 10 V, Note 1, 2 25 C ies C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 40 S 2500 pF 180 pF 75 pF 135 nC 23 nC 50 nC C res Qg Q ge IC = IT , VGE = 15 V, VCE = 0.5 VCES Q gc t d(on) Inductive load 20 ns t ri IC = IT, VGE = 15 V VCE = 720 V, RG = Roff = 5 Ω 28 ns t d(off) tfi 350 Note 2 500 ns 7.5 mJ 200 4.7 Eoff ns Inductive load, TJ = 125°°C 20 ns t ri IC = IT, VGE = 15 V 28 ns E on VCE = 720 V, RG = Roff = 5 Ω, Note 2 1.5 mJ 400 ns t d(on) td(off) ISOPLUS247 Outline t fi 420 ns Eoff 8.7 mJ 1.25 K/W R thJC 0.21 R thCH K/W Diode Symbol Conditions (TJ = 25°C unless otherwise specified ) VF IF = 30 A; Note 1 IRM t rr R thJC R thCH Characteristic Values Min. Typ. Max. 2.5 1.8 2.75 V V IF = IT, diF/dt = -100 A/μs; TVJ = 100°C VR = 100 V; VGE = 0 V 5.5 200 11.5 A ns with heat transfer paste 0.25 TVJ = 150°C 1.1 K/W K/W Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % Note 2: Test Current IT = 50A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 6,583,505 6,710,463 6771478 B2 IXGR 50N90B2D1 Fig. 1. Output Characteristics @ 25 ºC Fig. 2. Extended Output Characteristics @ 25 ºC 300 100 90 VGE =15V 80 13V 11V VGE = 15V I C - Amperes I C - Amperes 9V 70 60 50 7V 40 30 11V 200 150 9V 100 7V 20 50 10 5V 0 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 3 6 Fig. 3. Output Characteristics @ 125 ºC 12 15 Fig. 4. Dependence of V CE(sat) on Tem perature 100 1.3 90 VGE = 15V 80 13V 11V VGE = 15V I C = 100A 1.2 70 VC E (sat)- Normalized I C - Amperes 9 V C E - Volts V C E - Volts 9V 60 50 7V 40 30 20 1.1 1.0 I C = 50A 0.9 0.8 5V 10 0 I C = 25A 0.7 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 -25 V CE - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 6.5 250 6.0 TJ = 25ºC 5.5 I C - Amperes I C = 100A 5.0 VC E - Volts 13V 250 50A 25A 4.5 4.0 3.5 225 TJ = -40ºC 200 25ºC 125ºC 175 150 125 100 3.0 75 2.5 50 2.0 25 0 1.5 5 6 7 8 9 10 11 V G E - Volts © 2006 IXYS All rights reserved 12 13 14 15 3 4 5 6 7 8 V G E - Volts 9 10 11 12 IXGR 50N90B2D1 Fig. 8. Dependence of Turn-off Fig. 7. Transconductance Energy Loss on RG 55 40 50 E o f f - milliJoules 40 g f s - Siemens TJ = 125ºC 35 45 35 30 TJ = -40ºC 25 25ºC 20 125ºC 15 30 VCE = 720V 25 20 I C = 50A 15 10 10 5 5 I C = 25A 0 0 0 25 50 75 100 125 150 175 200 225 0 I C - Amperes Energy Loss on IC 60 90 120 R G - Ohms 150 20 20 18 R G = 5Ω 16 VGE = 15V 14 VCE = 720V 16 12 10 8 TJ = 25ºC 6 14 12 2 0 0 50 60 70 80 I C - Amperes 90 I C = 25A 25 100 1000 900 VGE = 15V 800 VCE = 720V I C = 25A Switching Time - nanoseconds tfi - - - - - TJ = 125ºC 50A 100A 700 I C = 100A 600 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 600 td(off) 1100 45 Sw itching Tim e on IC Sw itching Tim e on RG 1200 35 Fig. 12. Dependence of Turn-off Fig. 11. Dependence of Turn-off 1300 I C = 50A 6 2 40 VGE = 15V VCE = 720V 8 4 30 R G = 5Ω 10 4 20 I C = 100A 18 TJ = 125ºC E o f f - milliJoules E o f f - MilliJoules 30 Fig. 10. Dependence of Turn-off Energy Loss on Tem perature Fig. 9. Dependence of Turn-Off Switching Time - nanoseconds I C = 100A VGE = 15V 50A 25A 500 400 300 200 td(off) 550 tfi - - - - - R G = 5Ω, VGE = 15V 500 VCE = 720V 450 TJ = 125ºC 400 350 300 TJ = 25ºC 250 200 150 5 10 15 20 25 30 R G - Ohms 35 40 45 50 IXYS reserves the right to change limits, test conditions, and dimensions. 20 30 40 50 60 70 I C - Amperes 80 90 100 IXGR 50N90B2D1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 15 td(off) 550 13.5 tfi - - - - - - 500 I C = 25A 450 V GE = 15V 400 V CE = 720V VCE = 450V I C = 50A 12 50A 100A RG = 5 Ω I G = 10mA 10.5 VG E - Volts Switching Time - nanoseconds 600 350 300 9 7.5 6 4.5 250 I C = 100A 3 50A 25A 1.5 200 150 0 25 35 45 55 65 75 85 95 105 115 125 0 TJ - Degrees Centigrade 20 40 60 80 100 120 140 Q G - nanoCoulombs Fig. 16. Reverse-Bias Safe Operating Area Fig. 15. Capacitance 10000 110 f = 1 MHz 100 C ies 1000 80 I C - Amperes Capacitance - p F 90 C oes 100 C res 70 60 50 40 30 TJ = 125ºC 20 R G = 10Ω dV/dT < 10V/ns 10 10 0 5 10 15 20 25 V C E - Volts 30 35 0 40 100 200 300 400 500 600 V C E - Volts 700 800 900 Fig. 17. Maxim um Transient Therm al Resistance Fig. 17. Maximum Transient Thermal Resistance 1 R( t h ) J C- ºC / W R( t h ) J C - ºC / W 10 1 0.1 0.1 0.010.01 0.1 0.1 © 2006 IXYS All rights reserved 11 10 10 Pulse Width - milliseconds Pulse Width - milliseconds 100 100 1000 1000 IXGR 50N90B2D1 Diode Curves 5 70 A 60 60 μC Qr IF 50 IRM 2 20 20 1 10 0 IF= 30A IF= 15A 40 IF= 30A IF= 15A 30 TVJ=150°C TVJ=100°C 30 TVJ= 100°C 50 4 3 40 A TVJ= 100°C 0 1 2 3 V 10 0 100 4 VF Fig. 18. Forward current IF versus VF 0 A/μs 1000 -diF/dt 220 ns TVJ= 100°C TVJ= 100°C VFR IRM 0.8 V FR 0.0 IF= 30A IF= 15A 160 tfr 40 Qr 0.5 μs tfr 80 180 1.0 600 A/μs 800 1000 -diF/dt 1.2 V trr Kf 400 120 200 1.5 200 Fig. 20. Peak reverse current IRM Fig. 19. Reverse recovery charge Qr 2.0 0 0.4 140 0 40 80 120 C 160 120 0 200 400 600 TVJ 0 800 1000 A/μs -diF/dt Fig. 21. Dynamic parameters Qr, IRM Fig. 22. Recovery time trr versus -diF/dt 0 200 10 1 1 0.1 ZthJC - K/W ZthJC 0 .1 0 .0 1 0.01 0 .0 0 1 0 .0 0 0 0 1 0.001 0.00001 0.0001 0.001 0 .0 0 0 1 0.01 0 .0 0 1 0 .0 1 0 .1 s 0.1 Time - seconds 1 t Fig. 24. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 0.0 600 A/μs 800 1000 diF/dt Fig. 23. Peak forward voltage VFR and 2 K/W 400 1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.