IXGR60N60C2D1

HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 48 A IF110 TC = 110°C (IXGR60N60C2D1) 39 A ICM TC = 25°C, 1 ms 300 A ISOPLUS247 (IXGR) C G = Gate E = Emitter VGE = 15 V, TVJ = 125°C, RG = 10 Ω (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C ICM = 100 A z z z z 250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ 50/60 Hz RMS, t = 1m VISOL 2500 V 5 g 300 °C Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s (ISOLATED TAB) C = Collector Features z SSOA E DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z z z z z Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Symbol Test Conditions BV CES VGE(th) IC IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 50 A, VGE = 15 V Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 1 mA, VGE = 0 V = 250 µA, VCE = VGE © 2004 IXYS All rights reserved 600 3.0 GR60N60C2 GR60N60C2D1 TJ = 25°C TJ = 125°C 2.3 2.0 5.0 V V 50 650 µA µA ±100 nA 2.7 V V z z z Easy assembly High power density Very fast switching speeds for high frequency applications DS99051D(05/04) IXGR 60N60C2 IXGR 60N60C2D1 Symbol gfs Cies Coes Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IC = 50 A; VCE = 10 V, Note 1 VCE = 25 V, VGE = 0 V, f = 1 MHz 40 55 S 60N60C2 3900 280 pF pF 320 97 pF pF 60N60C2D1 C res Qg Qge Qgc IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 140 nC 28 35 nC nC td(on) Inductive load, TJ = 25°C 18 ns tri IC = 50 A, VGE = 15 V 25 ns td(off) VCE = 400 V, RG = Roff = 2.0 Ω 95 150 ns tfi 35 0.49 Eoff td(on) tri Eon td(off) tfi Eoff RthJ-DCB RthJC RthCS IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω (Note 2) (Note 3) Reverse Diode (FRED) Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM t rr ns 0.8 mJ 18 25 1.6 130 80 0.92 Inductive load, TJ = 125°C ISOPLUS 247 Outline ns ns mJ ns ns mJ 0.25 K/W 0.50 K/W 0.15 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 RthJC 2.0 1.39 V 8.3 A ns 0.85 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 2: RthJ-DCB is the thermal resistance junction-to-internal side of DCB substrate 3: RthJC is the thermal resistance junction-to-external side of DCB substrate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 60N60C2 IXGR 60N60C2D1 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 100 200 VG E = 15V 13V 11V 90 80 VG E = 15V 13V 11V 9V 175 9V 70 7V I C - Amperes I C - Amperes 150 60 50 40 125 100 7V 75 30 50 20 5V 25 10 5V 0 0 0.5 1 1.5 2 2.5 3 1 3.5 1.5 2 Fig. 3. Output Characteristics 3 100 4 4.5 1.2 VG E = 15V 13V 11V 80 9V 1.1 70 VC E (sat) - Normalized 90 7V 60 50 40 30 5V VG E = 15V I C = 100A 1 0.9 I C = 50A 0.8 0.7 I C = 25A 20 0.6 10 0 0.5 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage Fig. 6. Input Admittance vs. Gate-to-Emiiter voltage 5 200 T J = 25º C 4.5 175 150 I C - Amperes 4 VCE - Volts 3.5 Fig. 4. Temperature Dependence of V CE(sat) @ 125 Deg. C I C - Amperes 2.5 V CE - Volts V CE - Volts 3.5 3 2.5 I C = 100A 2 100 75 T J = 125º C 50 50A 1.5 125 25º C -40º C 25 25A 1 0 5 6 7 8 9 10 11 V GE - Volts © 2004 IXYS All rights reserved 12 13 14 15 3.5 4 4.5 5 5.5 6 6.5 V GE - Volts 7 7.5 8 8.5 IXGR 60N60C2 IXGR 60N60C2D1 Fig. 7. Transconductance Fig. 8. Dependence of Eoff on RG 100 6 TJ = 125º C VGE = 15V VCE = 400V 90 T J = -40º C 80 25º C 70 125º C E off - milliJoules g f s - Siemens 5 60 50 40 30 20 I C = 100A 4 I C = 75A 3 I C = 50A 2 1 10 0 25 50 75 100 125 150 175 2 200 6 8 10 12 14 R G - Ohms Fig. 9. Dependence of Eoff on Ic Fig. 10. Dependence of Eoff on Temperature 16 5 R G = 3 Ω. R G = 10 Ω - - - - 4 4 I C - Amperes 5 R G= 3 Ω R G= 10 Ω - - - - 4 VG E = 15V VC E = 400V E off - milliJoules E off - MilliJoules I C = 25A 0 0 T J = 125 ºC 3 2 T J = 25 ºC I C = 100A VG E = 15V VC E = 400V I C = 75A 3 2 I C = 50A 1 1 0 0 I C = 25A 20 30 40 50 60 70 80 90 25 100 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 11. Gate Charge Fig. 12. Capacitance 15 10000 f = 1M Hz VG E - Volts 12 Capacitance - pF VC E = 300V I C = 50A I G = 10mA 9 6 C ies 1000 C oes 100 C res 3 0 10 0 20 40 60 80 100 120 140 Q G - nanoCoulombs IXYS reserves the right to change limits, test conditions, and dimensions. 0 5 10 15 20 25 V CE - Volts 30 35 40 IXGR 60N60C2 IXGR 60N60C2D1 Fig. 13. Maxim um Transient Therm al Resistance 0.55 0.5 R( t h ) J C - ºC / W 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1 10 100 Pulse Width - milliseconds © 2004 IXYS All rights reserved 1000 IXGR 60N60C2 IXGR 60N60C2D1 160 A 140 IF 4000 nC 120 80 TVJ= 100°C VR = 300V 3000 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V A IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V 0 A/µs 1000 -diF/dt VF Fig. 14. Forward current IF versus VF Fig. 15. Reverse recovery charge Qr versus -diF/dt 140 2.0 TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 0 400 600 A/µs 800 1000 -diF/dt Fig. 16. Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 µs tfr IF=120A IF= 60A IF= 30A 110 1.2 VFR tfr 120 1.0 200 10 0.8 5 0.4 IRM 100 0.5 Qr 90 0.0 80 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 17. Dynamic parameters Qr, IRM versus TVJ Fig. 18. Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 19. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 0.001 0.0001 0.00001 TVJ= 100°C IF = 60A DSEP 2x61-06A 0.0001 0.001 0.01 s 0.1 t Fig. 20. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 1 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399