IXGR60N60C3D1

IXGR60N60C3D1 GenX3TM 600V IGBT w/ Diode VCES IC110 VCE(sat) tfi(typ) (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C ( Limited by Leads) 75 A IC110 TC = 110°C 30 A IF110 TC = 110°C 17 A ICM TC = 25°C, 1ms 260 A IA EAS TC = 25°C TC = 25°C 40 400 A mJ SSOA VGE = 15V, TVJ = 125°C, RG = 3Ω ICM = 125 A (RBSOA) Clamped Inductive Load PC TC = 25°C G C E G = Gate E = Emitter Isolated Tab C = Collector Features z z 170 W -55 ... +150 °C z TJM 150 °C z Tstg -55 ... +150 °C z 2500 3000 V~ V~ 20..120/4.5..27 N/lb z z VISOL 50/60 Hz, RMS, t = 1minute IISOL < 1mA t = 10 s FC Mounting Force TL Maximum Lead Temperature for Soldering 300 °C z TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C z 5 g Weight 600V 30A 2.5V 50ns ISOPLUS247TM VCE ≤ VCES TJ = = ≤£ = Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V Electrical Isolation Optimized for Low Switching Losses Square RBSOA Avalanche Rated Anti-Parallel Ultra Fast Diode Advantages High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 125°C 5.5 TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved z V z 50 μA 1 mA z ±100 2.2 1.7 z 2.5 nA z z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100055B(01/10) IXGR60N60C3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 23 IC = 40A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz 38 S 2810 230 80 pF pF pF 115 22 43 nC nC nC 21 ns 33 0.80 ns mJ Qg Qge Qgc td(on) tri Eon td(off) tfi IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°C IC = 40A, VGE = 15V VCE = 480V, RG = 3Ω 70 Note 2 110 50 Eoff td(on) tri Eon td(off) tfi Eoff ISOPLUS247 (IXGR) Outline 0.45 Inductive Load, TJ = 125°C IC = 40A, VGE = 15V VCE = 480V, RG = 3Ω Note 2 RthJC RthCS ns ns 0.80 mJ 21 33 1.25 112 86 0.80 ns ns mJ ns ns mJ 0.15 0.73 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 TJ = 150°C 1.6 IRM IF = 30A, VGE = 0V, TJ = 100°C -diF/dt = 100A/μs, VR = 100V IF = 1A, -di/dt = 100A/μs, VR = 30V 100 25 trr V V 4 A ns ns 1.5 °C/W RthJC Notes: 2.8 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR60N60C3D1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 80 300 VGE = 15V 13V 11V 70 VGE = 15V 13V 250 11V 9V IC - Amperes IC - Amperes 60 50 40 30 7V 200 150 9V 100 20 7V 50 10 5V 0 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 2 4 6 80 12 14 16 1.2 VGE = 15V 13V 11V 70 VGE = 15V 1.1 I 60 9V VCE(sat) - Normalized IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 50 40 7V 30 20 10 C = 80A 1.0 0.9 I C = 40A 0.8 0.7 I 0.6 5V 0 C = 20A 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 25 50 75 VCE - Volts 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 160 6.0 TJ = 25ºC 5.5 140 120 5.0 I 4.5 C 4.0 = 80A 40A 20A IC - Amperes VCE - Volts 8 VCE - Volts VCE - Volts 3.5 100 60 3.0 40 2.5 20 2.0 TJ = 125ºC 25ºC - 40ºC 80 0 6 7 8 9 10 11 12 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGE - Volts 7.5 8.0 8.5 9.0 9.5 IXGR60N60C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 70 16 TJ = - 40ºC 60 VGE - Volts 125ºC 40 I C = 40A I G = 10 mA 12 25ºC 50 g f s - Siemens VCE = 300V 14 30 20 10 8 6 4 10 2 0 0 0 20 40 60 80 100 120 140 0 160 10 20 30 40 50 60 70 80 90 100 110 120 QG - NanoCoulombs IC - Amperes Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 140 10,000 Capacitance - PicoFarads 120 Cies 100 IC - Amperes 1,000 Coes 100 Cres f = 1 MHz 10 0 5 10 15 20 25 30 35 40 80 60 40 TJ = 125ºC 20 RG = 3Ω dv / dt < 10V / ns 0 100 150 200 250 VCE - Volts 300 350 400 450 500 550 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGR60N60C3D1 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 4.0 Eoff 3.5 Eon - --- 5.0 4.0 4.5 3.5 4.0 Eoff TJ = 125ºC , VGE = 15V Eoff - MilliJoules 3.5 2.0 3.0 1.5 2.5 I C = 40A 1.0 0.5 0.0 4 5 6 7 8 9 10 11 12 13 14 3.0 VCE = 480V 2.5 2.5 TJ = 125ºC 2.0 1.5 2.0 1.0 1.5 0.5 1.0 0.0 1.5 0.5 0.0 20 15 25 30 35 40 4.0 3.5 ---- I C = 80A 1.5 2.0 1.0 1.5 I C = 40A 55 65 75 85 95 105 115 0.5 125 tf 240 VCE = 480V 220 200 120 180 110 I C 160 = 80A 100 140 I C 100 70 80 60 60 3 4 5 6 7 8 td(off) - - - - 140 160 130 140 80 90 60 40 20 50 55 60 13 14 15 tf 65 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 70 td(off) - - - - 120 75 80 VCE = 480V I C = 80A 110 100 100 80 90 I C = 40A 60 80 70 40 70 60 20 80 TJ = 25ºC 45 12 130 120 t f - Nanoseconds t f - Nanoseconds 100 t d(off) - Nanoseconds TJ = 125ºC 40 11 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 60 125 t d(off) - Nanoseconds 120 110 35 10 RG = 3Ω , VGE = 15V 120 30 9 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 480V 25 120 = 40A 80 RG = 3Ω , VGE = 15V 20 260 RG - Ohms 180 100 80 130 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 75 TJ = 125ºC, VGE = 15V TJ - Degrees Centigrade 160 70 td(off) - - - - 90 1.0 0.0 45 t f - Nanoseconds Eoff - MilliJoules Eon - MilliJoules 2.5 tf 140 3.0 2.0 35 65 t d(off) - Nanoseconds VCE = 480V 25 60 280 150 RG = 3Ω , VGE = 15V 0.5 55 170 160 2.5 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 Eon 45 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 1.0 TJ = 25ºC RG - Ohms 3.0 2.0 Eon - MilliJoules = 80A Eon - MilliJoules C 2.5 3 3.0 4.0 I 3.5 ---- Eoff - MilliJoules VCE = 480V 3.0 Eon RG = 3Ω , VGE = 15V IXGR60N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tr 120 td(on) - - - I C = 80A 40 80 35 60 30 40 I C 25 = 40A 20 20 0 15 3 4 5 6 7 8 9 10 11 12 13 14 tr 27 td(on) - - - - 90 RG = 3Ω , VGE = 15V 26 80 VCE = 480V 25 70 24 TJ = 25ºC, 125ºC 60 23 50 22 40 21 30 20 20 19 10 15 t d(on) - Nanoseconds VCE = 480V 100 28 100 45 TJ = 125ºC, VGE = 15V t d(on) - Nanoseconds t r - Nanoseconds 110 50 t r - Nanoseconds 140 18 20 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 110 29 tr 100 td(on) - - - - 28 RG = 3Ω , VGE = 15V 27 VCE = 480V 80 26 70 25 I C = 80A 60 24 50 23 40 I C t d(on) - Nanoseconds t r - Nanoseconds 90 22 = 40A 30 21 20 25 35 45 55 65 75 85 95 105 115 20 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_60N60C3(6D)01-15-10-E IXGR60N60C3D1 1000 60 A 50 IF 30 TVJ= 100°C 800 Qr TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 40 600 IF= 60A IF= 30A IF= 15A IRM 20 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 TVJ= 100°C VR = 300V A nC V = 300V R 0 1 0 100 3 V 2 5 A/μs 1000 -diF /dt VF Fig. 22. Reverse Recovery Charge Qr Versus -diF/dt Fig. 21. Forward Current IF Versus VF 2.0 90 Kf IF= 60A IF= 30A IF= 15A IRM 400 600 A/μs 800 -diF /dt 1000 1.00 TVJ= 100°C IF = 30A μs VFR tfr 80 1.0 200 Fig. 23. Peak Reverse Current IRM Versus -diF/dt V V FR 15 trr 1.5 0 20 TVJ= 100°C VR = 300V ns 0 tfr 0.75 10 0.50 5 0.25 70 0.5 Qr 0.0 0 40 80 120 °C 160 60 0 200 400 T VJ 1000 0 0 200 400 Fig. 25. Recovery Time trr Versus -diF/dt 0.00 600 A/μs 800 1000 diF /dt Fig. 26. Peak Forward Voltage VFR and tfr Versus diF/dt 1 0 .1 thJC - K/W 0.1 Z thJC 800 A/μs -diF /dt Fig. 24. Dynamic Parameters Qr, IRM Versus TVJ 1 K/W 600 Z 0.01 0 .0 1 0.001 0.00001 0 .0 0 1 0 .0 0 0 1 DSEP 29-06 0.0001 0.001 0 .0 0 1 0.01 0.1 0 .0 1 t s 1 0 .1 1 T im e - S e c o n d s Fig. 27. Transient Thermal Resistance Impedance ( for Diode) © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: G_60N60C3(6D)01-15-10-E Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.