IXGR60N60U1

Low VCE(sat) IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC100 ICM TC = 25°C TC = 90°C TC = 25°C, 1 ms 75 60 200 A A A ICM = 100 A 300 W -55 ..+ 150 150 -55...+ 150 °C °C °C 300 °C 2500 V 5 g SSOA VGE = 15 V, TVJ = 125°C, RG = 10 W (RBSOA) Clamped inductive load; VCL = 0.8 VCES PC TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s V ISOL 50/60Hz, RMS, t = 1minute, leads-to tab Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 1 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 150°C = IC100, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.5 V 250 2 mA mA ±100 nA 1.7 V ISOPLUS247TM G C E Isolated back surface* G = Gate, E = Emitter, C = Collector, TAB = Collector * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low collector to tab capacitance ( 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°C td(off) tfi t ri td(off) tfi Eoff 16 mJ 50 ns IC = IC100, VGE = 15 V, L = 100 mH 240 ns VCE = 0.8 VCES, RG = Roff = 2.7 W 1000 ns Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG 1000 ns 26 mJ 0.5 K/W RthJC RthCK 0.15 Reverse Diode Test Conditions VF IF = IC100, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol RthJC ISOPLUS 247 (IXGR) OUTLINE 2.2 V 1.0 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXGR 60N60U1 100 350 TJ = 25°C 90 VGE = 15V TJ = 25°C 13V 300 VGE = 15V 13V 11V 9V 7V 70 60 50 IC - Amperes IC - Amperes 80 40 30 250 11V 200 150 9V 100 20 50 10 7V 0 0 0 1 2 3 4 0 5 2 4 8 10 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics Figure 2. Extended Output Characteristics 200 1.8 VGE = 15V VCE (sat) - Normalized VGE = 15V 175 150 IC - Amperes 6 125 o TJ = 25 C 100 o TJ = 125 C 75 50 IC = 120A 1.6 1.4 1.2 IC = 60A 1.0 IC = 30A 0.8 25 0 0 1 2 3 0.6 25 4 50 VCE - Volts 75 100 125 150 TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 1.3 BV/VGE(th) - Normalized IC - Amperes 100 10 o TJ = 125 C RG = 4.7W dV/dt < 5V/ns 1 0.1 0 100 200 300 VCE - Volts Figure 5. Admittance Curves © 2000 IXYS All rights reserved 400 500 600 1.2 VGE(th) IC = 250µA BVCES IC = 250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C Figure 6. Capacitance Curves 3-5 IXGR 60N60U1 1000 40 18 1000 TJ = 125°C IC = 60A 30 tfi 500 20 Eoff 250 10 0 0 20 40 60 80 100 0 120 16 800 tfi 600 14 400 12 10 200 0 10 IC - Amperes 40 50 10000 Capacitance - picofards VGE - Volts 30 Figure 8. Dependence of EON and EOFF on RG. IC = 60A VCE = 300V 12 20 RG - Ohms Figure 7. Dependence of EON and EOFF on IC. 15 Eoff Eoff - millijoules 750 tfi - nanoseconds RG = 10
Eoff - milliJoules tfi - nanoseconds TJ = 125°C 9 6 3 0 Cies 1000 100 10 0 50 100 150 200 250 0 QG - nanocoulombs 10 20 30 40 VCE - Volts Figure 10. Turn-off Safe Operating Area Figure 9. Gate Charge ZthJC (K/W) 1 0.1 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. IGBT Transient Thermal Resistance © 2000 IXYS All rights reserved 4-5 IXGR 60N60U1 Fig. 12 Forward current versus voltage drop. Fig. 13 Recovery charge versus -diF/dt. Fig. 14 Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16 Recovery time versus -diF/dt. Fig. 17 Peak forward voltage vs. diF/dt. Fig. 18 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved 5-5