IXGR72N60C3D1

IXGR72N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE(sat) tfi(typ) High-Speed Low-Vsat PT IGBT 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C 35 A IF110 TC = 110°C 36 A ICM TC = 25°C, 1ms 400 A IA EAS TC = 25°C TC = 25°C 50 500 A mJ SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 150 A (RBSOA) Clamped Inductive Load VCE ≤ VCES PC TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 3000 V~ V~ 20..120/4.5..27 N/lb VISOL 50/60 Hz, RMS, t = 1Minute IISOL < 1mA t = 20 Seconds FC Mounting Force TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C 5 g Weight G z z z z z z z z z = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.10 1.65 z z 5.5 V 300 5 μA mA ±100 nA 2.70 V V C = Collector Silicon Chip on Direct-Copper Bond (DCB) Substrate Optimized for Low Switching Losses Square RBSOA Isolated Mounting Surface Anti-Parallel Ultra Fast Diode Avalanche Rated 2500V Electrical Isolation High Power Density Low Gate Drive Requirement Applications z IC Isolated Tab Advantages z VGE(th) E Features z Characteristic Values Min. Typ. Max. C G = Gate E = Emitter z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) 600V 35A 2.7V 55ns ISOPLUS 247TM 200 TJ = = ≤£ = z z High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100010A(11/09) IXGR72N60C3D1 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 33 IC = 50A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge Qgc td(on) tri Eon td(off) tfi IC = 50A, VGE = 15V, VCE = 0.5 • VCES Inductive Load, TJ = 25°°C IC = 50A, VGE = 15V td(on) tri Eon td(off) tfi Eoff 55 S 4780 330 117 pF pF pF 175 33 72 nC nC nC 27 ns 37 1.03 ns mJ VCE = 480V, RG = 2Ω, Note 2 Eoff 77 130 ns 55 110 ns 0.95 mJ 0.48 Inductive Load, TJ =1 25°°C IC = 50A, VGE = 15V VCE = 480V, RG = 2Ω, Note 2 RthJC RthCS ISOPLUS247 (IXGR) Outline 26 36 1.48 120 124 0.93 ns ns mJ ns ns mJ 0.15 0.62 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VF IRM trr IF = 60A, VGE = 0V, Note 1 Characteristic Values Min. Typ. Max. TJ = 150°C 1.4 2.5 V V TJ = 100°C -diF/dt = 100A/μs, VR = 100V IF = 1A, -di/dt = 200A/μs, VR = 30V 8.3 A 35 ns IF = 60A, VGE = 0V, 0.85 °C/W RthJC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGR72N60C3D1 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 100 350 VGE = 15V 13V 11V 90 80 11V 9V 250 IC - Amperes 70 IC - Amperes VGE = 15V 13V 300 60 50 7V 40 30 200 9V 150 100 20 7V 50 10 5V 5V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 0 2 4 6 VCE - Volts 12 14 1.3 100 VGE = 15V 13V 11V 90 80 VGE = 15V 1.2 VCE(sat) - Normalized 9V 70 IC - Amperes 10 Fig. 4. Dependence of VCE(sat) on JunctionTemperature Fig. 3. Output Characteristics @ T J = 125ºC 60 50 7V 40 30 1.1 I = 100A C 1.0 0.9 I C = 50A 0.8 0.7 20 I C = 25A 0.6 5V 10 0 0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 VCE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 100 5.0 TJ = 25ºC 4.5 90 80 4.0 3.5 C TJ = 125ºC 25ºC - 40ºC 70 = 100A 50A 25A IC - Amperes I VCE - Volts 8 VCE - Volts 3.0 60 50 40 30 2.5 20 2.0 10 1.5 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 IXGR72N60C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 90 TJ = - 40ºC 80 70 60 VGE - Volts 125ºC 50 I C = 50A I G = 10mA 12 25ºC g f s - Siemens VCE = 300V 14 40 30 10 8 6 4 20 2 10 0 0 0 10 20 30 40 50 60 70 80 90 0 100 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 160 10,000 140 Capacitance - PicoFarads Cies 120 IC - Amperes 1,000 Coes 100 Cres 60 TJ = 125ºC , RG = 2Ω dv / dt < 10V / ns 20 10 5 80 40 f = 1 MHz 0 100 10 15 20 25 30 35 40 0 100 200 VCE - Volts 300 400 500 600 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 IXGR72N60C3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 5.0 Eoff 4.5 Eon - --- 5.5 TJ = 125ºC , VGE = 15V 4.0 5.6 Eoff 2.4 VCE = 480V I C 4.0 = 100A 2.5 3.5 2.0 3.0 1.5 2.5 I C = 50A 1.0 Eoff - MilliJoules 3.0 4.8 VCE = 480V 2.0 4.5 ---- 4.0 Eon - MilliJoules 3.5 Eon RG = 2Ω , VGE = 15V 5.0 E on - MilliJoules E off - MilliJoules 2.8 6.0 1.6 3.2 1.2 2.4 TJ = 125ºC, 25ºC 0.8 1.6 0.4 0.8 2.0 0.5 1.5 0.0 0.0 1.0 2 3 4 5 6 7 8 9 10 11 12 13 14 20 15 30 40 50 RG - Ohms ---- 4.8 3.2 I C = 100A 1.5 2.4 1.0 1.6 I C = 50A 0.5 0.0 35 45 55 65 75 85 95 105 115 Eon - MilliJoules E off - MilliJoules 4.0 2.0 25 0.8 0.0 125 500 180 tf 170 TJ = 125ºC, VGE = 15V td(off) - - - - 350 150 300 I 140 C 130 200 I 120 100 50 0 3 4 5 6 80 100 60 90 TJ = 25ºC 40 80 20 70 8 9 10 11 12 13 14 160 15 125 tf 140 80 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 90 70 100 td(off) - - - - 115 RG = 2Ω , VGE = 15V VCE = 480V t f - Nanoseconds 110 60 7 120 105 100 95 I C = 100A I C = 50A 80 60 85 75 40 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 65 125 t d(off) - Nanoseconds 120 100 50 150 100 130 TJ = 125ºC 40 = 50A 110 2 140 VCE = 480V 30 C Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature t d(off) - Nanoseconds t f - Nanoseconds td(off) - - - - RG = 2Ω , VGE = 15V 20 250 90 150 120 = 100A RG - Ohms 180 140 400 160 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current tf 450 VCE = 480V TJ - Degrees Centigrade 160 0.0 100 t d(off) - Nanoseconds VCE = 480V t f - Nanoseconds RG = 2Ω , VGE = 15V 2.5 90 190 5.6 Eon 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 3.5 Eoff 70 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 3.0 60 IXGR72N60C3D1 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 160 60 C 50 = 100A 100 45 80 40 60 35 I C 30 = 50A 20 25 2 3 4 5 6 7 8 9 10 11 12 13 14 36 td(on) - - - - RG = 2Ω , VGE = 15V 34 VCE = 480V 80 32 70 30 TJ = 25ºC, 125ºC 60 28 50 26 40 24 30 22 20 20 10 15 20 30 40 50 60 70 80 90 t d(on) - Nanoseconds I 40 tr 90 VCE = 480V 120 38 100 55 t d(on) - Nanoseconds t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V t r - Nanoseconds tr 140 110 18 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 120 35 tr 100 RG = 2Ω , VGE = 15V td(on) - - - - 34 33 VCE = 480V 90 80 32 31 I C = 100A 70 30 60 29 50 28 40 27 30 I C 26 = 50A 20 25 35 45 55 65 t d(on) - Nanoseconds t r - Nanoseconds 110 75 85 95 105 115 25 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_72N60C3(8D)11-25-09-C IXGR72N60C3D1 160 A 140 IF 4000 80 TVJ= 100°C VR = 300V nC 120 3000 60 TVJ= 150°C 100°C 25°C 80 IF= 120A, 60A, 30A IRM Qr 100 TVJ= 100°C VR = 300V A IF= 120A, 60A, 30A 2000 40 60 40 1000 20 20 0 0 1 2 0 100 V A/μs 1000 -diF/dt VF Fig. 21. Forward Current IF Versus VF Fig. 22. Reverse Recorvery Charge Qr Versus -diF/dt 2.0 140 TVJ= 100°C VR = 300V 400 600 A/μs 800 1000 -diF/dt 1.6 TVJ= 100°C IF = 60A μs 1.2 trr 120 1.0 200 Fig. 23. Peak ReverseCurrent IRM Versus -diF/dt V V FR 15 trr Kf 0 20 ns 130 1.5 0 tfr VFR IF= 30A, 60A, 120A 110 10 0.8 5 0.4 IRM 100 0.5 QRM 0.0 0 40 90 80 120 °C 160 80 0 200 400 T VJ 600 800 A/μs 1000 0 0 200 400 -diF/dt Fig. 24. Dynamic paraments Qr, IRM Versus TvJ Fig. 25. Recorvery Time trr Versus -diF/dt 0.0 600 A/μs 800 1000 diF/dt Fig. 26. Peak Forward Voltage VRM and trr Versus -diF/dt 1.000 1 K/W 0.1 Z thJC Z(th)JC ºC / W 0.100 0.01 0.010 0.001 0.0001 0.00001 0.001 0.0001 DSEP 2x61-06A 0.0001 0.001 0.001 0.01 0.1 0.01 t s 1 0.1 1 10 Pulse Width - Seconds Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode) Fig. 27. Maximum Transient Thermal Impedance (for diode) © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: G_72N60C3(8D)11-25-09-C Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.