IXIDM1401

P R O D U C T Efficiency Through Technology B R I E F IXIDM1401 - HIGH VOLTAGE ISOLATED DRIVER MODULE FEBRUARY 2017 OVERVIEW The new IXIDM1401 driver module combines supreme compactness with the highest performance and reliability. It comprises a dual-channel driver core that targets medium power dual-channel IGBTs for up to 4kV and applications such as inverters, drives & automation, UPS, renewable energy, transportation and medical. Its parallel capability allows easy high power system design. It supports switching up to 250 kHz, short-circuit protection, advanced active clamping and supply-voltage monitoring. Built using the IX6610/11 gate-driver chipset, it allows a 3.3 V microcontroller (MCU), through a 4 kV isolation barrier, to control IGBTs in the half-bridge configuration; the PWM signals can be as short as 500 ns, and there is no lower limit on the switching frequency. An internal power supply can provide up to 2W per channel of isolated power to drive both upper and lower IGBTs, effectively isolating the MCU from the high power circuitry. Operating from a single polarity 15V power source, it provides +15 V/-5V to the IGBT gates as well as +3.3V (at 50mA) to the MCU. A built-in under-voltage and over-voltage protection prevents the IGBTs from operating at gate voltages outside of the optimal window and informs the MCU about such conditions without regard to the source of the problems, which may come from either the low/high side IGBT behind the isolation barrier or the primary side before the isolation barrier. An over-current protection with a 300 mV threshold can be implemented by utilizing either a current-sense resistor or IGBT de-saturation event. It turns the IGBT off APPLICATIONS Various Appliances with Motors Operating by Microcontrollers Wind power and photovoltaic Industrial drives Electric/hybrid drive commercial vehicles Uninterruptible power supplies (UPS) Driving large parallel-connected IGBTs Medical (MrT, CT, X-ray) Tractions Applications immediately after the collector current exceeds a value set by the user and informs the MCU to make an appropriate decision. An Active Clamping Comparator with a 3.1 V threshold (with respect to the negative IGBT gate voltage) disables the driver when the collector voltage exceeds a level set by the user, preventing excessive power dissipation in the IGBTs. The built-in dead time delay circuitry, with channel A priority, prevents the IGBTs from turning on simultaneously. If channel B is active and channel A is forced into on-state, channel B becomes disabled immediately and channel A IGBT turns on with a preset delay time. After channel A becomes inactive, channel B, if active, turns on with the same delay time. If channel A is active and channel B is forced into on-state, this command will be ignored as long as channel A remains active. If channel A becomes inactive before the command activating channel B expires, channel B becomes active with a preset delay time after channel A becomes inactive. The over-temperature protection function disables the IGBTs if the internal chip’s temperature exceeds 150°C and resumes normal operations when the temperature falls below 125°C. If the IGBT assembly is equipped with a temperature sensor, the IXIDM1401 is able to translate its signal for the MCU. The IXIDM1401 is available in a 50x50x25 mm package with a 12-pin, 1 mm-pitch FFC connector to communicate with an MCU, two 5-pin, 2.54 mm-pitch headers to provide signals to/from the IGBTs, and one 2 pin, 2.54 mm-pitch header to translate signals from a temperature sensor of the IGBTs. KEY FEATURES Dual Channel Driver for Half-Bridge Switching Modules Blocking voltages up to 4000 V Minimum Input Pulse Width 500 ns Input to Output Gate Driver Signal Propagation Delay