IXKC13N80C

IXKC 13N80C Advanced Technical Information CoolMOS™ 1) Power MOSFET ISOPLUS™ Package ID25 = 13 A VDSS = 800 V RDS(on) max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D ISOPLUS220™ G G D S S • isolated back surface E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR TJ start = 25°C; single pulse; ID = 3.4 A TJ start = 25°C; repetitive; ID = 17 A dV/dt VDS < VDSS; IF = 17 A; TVJ = 150°C dIR /dt = 100 A/µs Symbol Conditions 800 V ± 20 V 13 9 A A 670 0.5 mJ mJ 6 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = ID90 VGS(th) VDS = VGS; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS 250 290 mΩ 4 V 25 µA µA ±100 nA t u Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating o e s a h p TVJ = 25°C TVJ = 125°C 125 VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 25 V; f = 1 MHz Qg Qgs Qgd RthJC max. 2 Ciss Coss Crss td(on) tr td(off) tf typ. • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation • 3rd generation CoolMOS™ 1) power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) • Low thermal resistance due to reduced chip thickness • Low drain to tab capacitance (