IXKC15N60C5

IXKC 15N60C5 Advanced Technical Information CoolMOS™ 1) Power MOSFET ID25 = 15 A VDSS = 600 V RDS(on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 q isolated back surface Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 7.9 A; TC = 25°C 600 V ± 20 V 15 11 A A 522 0.79 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = 12 A VGS(th) VDS = VGS; ID = 0.79 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz 2.5 TVJ = 25°C TVJ = 125°C typ. max. 150 165 mΩ 3 3.5 V 1 µA µA 100 nA 10 2000 100 Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 12 A 40 9 13 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 12 A; RG = 3.3 Ω 12 5 50 5 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved pF pF 52 nC nC nC ns ns ns ns 1.1 K/W • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20090209b 1-4 Advanced Technical Information IXKC 15N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 12 A; VGS = 0 V 0.9 trr QRM IRM IF = 12 A; -diF /dt = 100 A/µs; VR = 400 V 390 7.5 38 max. 12 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating storage VISOL RMS leads-to-tab, 50/60 Hz, f = 1 minute FC mounting force Symbol Conditions Maximum Ratings -55...+150 -55...+150 °C °C 2500 V~ 11-65 / 2.4-11 N/lb Characteristic Values min. RthCH with heatsink compound typ. 0.35 K/W 2.7 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved max. 20090209b 2-4 IXKC 15N60C5 Advanced Technical Information ISOPLUS220TM Outline A E INCHES MIN MAX .157 .197 .098 .118 .035 .051 .049 .065 .093 .100 .028 .039 .591 .630 .472 .512 .394 .433 .295 .335 .100 BASIC .512 .571 .118 .138 SYM D T A A2 b b2 b4 c D D1 E E1 e L L1 T L1 * Note 1 L 2X b4 MILLIMETERS MIN MAX 4.00 5.00 2.50 3.00 0.90 1.30 1.65 1.25 2.55 2.35 1.00 0.70 15.00 16.00 12.00 13.00 10.00 11.00 7.50 8.50 2.55 BASIC 13.00 14.50 3.00 3.50 42.5 47.5 1 NOTE: 1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3. 2. This drawing will meet dimensional requirement of JEDEC SS Product Outline TO-273 except D and D1 dimension. 3 2 3X b 2X b2 c 2X e A2 40 80 120 10V TJ = 125°C 1 2V TJ = 25°C VGS = 20 V 20 V 100 8V 1 2V VGS = 10 V 30 60 6V 8V 60 I D [A ] 5.5 V I D [A ] Ptot [ W] 80 40 6V 20 5V 40 5.5 V 10 20 4.5 V 5V 20 4.5 V 0 0 0 40 80 120 TC [°C] Fig. 1 Power dissipation 160 0 0 5 10 V DS 20 [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 15 0 5 10 V DS 15 20 [V] Fig. 3 Typ. output characteristics 20090209b 3-4 IXKC 15N60C5 Advanced Technical Information 0.5 1.2 TJV = 150°C 6.5 V 1 5.5 V VDS > 2·RDS(on) max · ID 0.4 80 0.3 60 25 °C 10 V 0.8 5V [Ω] D S (o n ) [Ω] 7V R R 0.6 I D [A ] 6V VDS = DS (on) 100 ID = 12 A VGS = 10 V 98% 0.2 40 typ TJ = 150 °C 0.4 0.1 0.2 20 0 0 0 10 20 30 40 0 -60 50 -20 20 60 140 180 0 2 4 T j [°C] I D [A] Fig. 4 Typ. drain-source on-state resistance 10 100 2 6 V GS 8 10 [V] Fig. 6 Typ. transfer characteristics Fig. 5 Drain-source on-state resistance 10 10 5 10 4 ID = 12 A pulsed 9 25 °C, 98% VGS = 0 V f = 1 MHz 8 150 °C, 98% VDS = 120 1 20V V 25 °C 10 7 TJ =150 °C 1 Ciss 40 0V 4 10 10 3 10 2 10 1 10 0 C [pF ] 5 V GS I F [A ] [V ] 6 Coss 0 3 2 Crss 1 10 -1 0 0 0.5 1 V SD 1.5 2 0 10 20 [V] Q Fig. 7 Forward characteristic of reverse diode Fig. 8 600 gate 30 0 40 200 300 V Typ. gate charge DS 400 500 [V] Fig. 9 Typ. capacitances 700 10 ID = 7.9 A 100 [nC] 0 ID = 0.75 mA 500 0.5 660 Z th J C [ K /W ] V B R (D S S ) [V ] 300 E AS [m J ] 400 620 0.2 10 D = tp/T -1 0.1 0.05 200 0.02 580 0.01 100 single pulse 0 10 540 20 60 100 140 T j [°C] Fig. 10 Avalanche energy 180 -60 -20 20 60 140 180 T j [°C] -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 100 20090209b 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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