IXKC19N60C5

IXKC 19N60C5 Advanced Technical Information CoolMOS™ 1) Power MOSFET ID25 = 19 A VDSS = 600 V RDS(on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 q isolated back surface Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25°C 600 V ± 20 V 19 15 A A 708 1.2 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = 16 A VGS(th) VDS = VGS; ID = 1.1 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz 2.5 TVJ = 25°C TVJ = 125°C typ. max. 110 125 3 3.5 V 2 µA µA 100 nA 20 2500 120 Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 12 A 53 12 18 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 16 A; RG = 3.3 Ω 15 5 50 5 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved Applications mΩ pF pF 70 nC nC nC ns ns ns ns 0.95 • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density K/W • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20090209b 1-4 Advanced Technical Information IXKC 19N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 16 A; VGS = 0 V 0.9 trr QRM IRM IF = 16 A; -diF /dt = 100 A/µs; VR = 400 V 430 9 42 max. 16 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating storage VISOL RMS leads-to-tab, 50/60 Hz, f = 1 minute FC mounting force Symbol Conditions Maximum Ratings -55...+150 -55...+150 °C °C 2500 V~ 11-65 / 2.4-11 N/lb Characteristic Values min. RthCH with heatsink compound Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved typ. max. 0.3 K/W 2.7 g 20090209b 2-4 IXKC 19N60C5 Advanced Technical Information ISOPLUS220TM Outline A E D T A A2 b b2 b4 c D D1 E E1 e L L1 T L1 * Note 1 2X b4 2 MILLIMETERS MIN MAX 5.00 4.00 3.00 2.50 0.90 1.30 1.25 1.65 2.55 2.35 1.00 0.70 16.00 15.00 13.00 12.00 10.00 11.00 7.50 8.50 2.55 BASIC 13.00 14.50 3.00 3.50 42.5 47.5 NOTE: 1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3. 2. This drawing will meet dimensional requirement of JEDEC SS Product Outline TO-273 except D and D1 dimension. L 1 INCHES MIN MAX .157 .197 .098 .118 .035 .051 .049 .065 .093 .100 .028 .039 .591 .630 .472 .512 .394 .433 .295 .335 .100 BASIC .512 .571 .118 .138 SYM 3 3X b 2X b2 c 2X e A2 50 120 140 TJ = 125°C TJ = 25°C 105 120 VGS = 10 V VGS =20 V 10 V 8 V 7V 8V 20 V 40 6V 90 100 5.5 V 75 30 7V I D [A ] I D [A ] Ptot [ W] 80 60 60 6V 40 5V 20 45 5.5 V 30 4.5 V 10 5V 20 15 4.5 V 0 0 0 0 40 80 120 160 0 5 TC [°C] Fig. 1 Power dissipation V DS 15 20 [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 10 0 5 10 15 20 V DS [V] Fig. 3 Typ. output characteristics 20090209b 3-4 IXKC 19N60C5 Advanced Technical Information 0.5 0.4 TJV = 150°C 0.4 20 V VDS = 120 VDS > 2·RDS(on) max · ID ID = 16 A VGS = 10 V 6 V 6.5 V 7V 5.5 V 25 °C 0.3 5V I D [A ] [Ω] DS (on) 0.2 TJ = 150 °C R R DS (on) [Ω] 80 0.3 0.2 typ 98 % 40 0.1 0.1 0 0 0 10 20 30 40 50 0 -60 -20 20 60 I D [A] 180 0 2 10 VDS = 120 V1 20 V TJ =150 °C 10 4 Ciss 10 3 10 2 10 1 10 0 Coss C [pF ] [V ] 6 5 V GS 10 40 0V 7 I F [A ] 8 [V] VGS = 0 V f = 1 MHz 8 150 °C, 98% 25 °C 6 GS 5 ID = 16 A pulsed 9 4 10 4 Fig. 6 Typ. transfer characteristics 10 1 2 V Fig. 5 Drain-source on-state resistance 25 °C, 98% 10 140 T j [°C] Fig. 4 Typ. drain-source on-state resistance 10 100 Crss 0 3 2 1 10 -1 0 0 0.5 1 V SD 1.5 2 0 20 30 Q [V] Fig. 7 Forward characteristic of reverse diode Fig. 8 gate 40 50 60 0 100 V Typ. gate charge DS 150 200 [V] Fig. 9 Typ. capacitances 10 ID = 11 A 50 [nC] 700 800 0 ID = 0.25 mA 0.5 B R (DS S ) [V ] Z th J C [ K /W ] 660 600 400 620 V E AS [mJ ] 10 0.2 10 0.1 0.05 0.02 580 200 D = tp/T -1 0.01 single pulse 540 0 20 60 100 140 T j [°C] Fig. 10 Avalanche energy 180 10 -60 -20 20 60 140 180 T j [°C] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 100 -2 20090209b 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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