IXKC20N60C

IXKC 20N60C CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 15 A RDS(on) max = 190 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS 600 V ± 20 V ID25 ID90 TC = 25°C TC = 90°C 15 10.5 A A EAS EAR single pulse; ID = 10 A; TC = 25°C repetitive; ID = 20 A; TC = 25°C 690 1 mJ mJ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 160 190 mΩ 3.9 V 25 250 µA µA 100 nA RDSon VGS = 10 V; ID = 16 A VGS(th) VDS = VGS; ID = 1 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 25 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 350 V; ID = 20 A 87 11 33 VGS = 13 V; VDS = 380 V ID = 21 A; RG = 3.3 Ω; TVJ = 125°C 10 5 67 4.5 td(on) tr td(off) tf q isolated tab 2.1 TVJ = 25°C TVJ = 150°C 2400 780 RthJC pF pF 114 nC nC nC ns ns ns ns 1 • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability K/W 1) IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved CoolMOS™ is a trademark of Infineon Technologies AG. 20080523a 1-4 IXKC 20N60C Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. IS VGS = 0 V VSD IF = 16 A; VGS = 0 V trr QRM IRM IF = 20 A; -diF /dt = 100 A/µs; VR = 480 V typ. max. 20 A 0.9 1.2 V 500 11 70 800 ns µC A Component Symbol Conditions TVJ Tstg operating storage VISOL RMS leads-to-tab, 50/60 Hz, f = 1 minute FC mounting force Symbol Conditions Maximum Ratings -55...+150 -55...+150 °C °C 2500 V~ 11-65 / 2.4-11 N/lb Characteristic Values min. RthCH with heatsink compound Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved typ. max. 0.3 K/W 2.7 g 20080523a 2-4 IXKC 20N60C ISOPLUS220TM Outline A E T SYM D A A2 b b2 b4 c D D1 E E1 e L L1 T L1 * Note 1 L 2X b4 1 3 2 2X e 3X b 2X b2 c A2 INCHES MIN MAX .157 .197 .098 .118 .035 .051 .049 .065 .093 .100 .028 .039 .591 .630 .472 .512 .394 .433 .295 .335 .100 BASIC .512 .571 .118 .138 MILLIMETERS MIN MAX 4.00 5.00 2.50 3.00 0.90 1.30 1.65 1.25 2.55 2.35 1.00 0.70 15.00 16.00 12.00 13.00 10.00 11.00 7.50 8.50 2.55 BASIC 13.00 14.50 3.00 3.50 47.5 42.5 NOTE: 1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3. 2. This drawing will meet dimensional requirement of JEDEC SS Product Outline TO-273 except D and D1 dimension. 140 70 120 VGS = 20 V 10 V 8V 40 TJ = 150°C VGS = 20 V 10 V 7V 7V 100 6.5 V 5.5 V ID [A] ID [A] 80 Ptot [ W] 6V TJ = 25°C 6V 60 5V 5.5 V 40 4.5 V 5V 20 4.5 V 0 0 40 80 120 20 160 VDS [V] TC [°C] Fig. 1 Power dissipation Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved VDS [V] Fig. 3 Typ. output characteristics 20080523a 3-4 IXKC 20N60C TJ = 150°C 1.4 VDS > 2x ID x RDS(on)max 1.0 70 ID = 13.1 A VGS = 10 V ID [A] 4V 4.5 V 5V 5.5 V 6V 6.5 V 20 V 1.0 RDS(on) [7] RDS(on) [7] VGS = 35 Fig. 4 8 140 ID [A] TJ [°C] Typ. drain-source on-state resistance VGS [V] Fig. 5 Drain-source on-state resistance Fig. 6 Typ. transfer characteristics ID = 20.7 A pulsed 14 VGS = 0 V, f = 1 MHz VDS max IF [A] VGS [V] C [ pF ] VDS max 120 Fig. 7 Forward characteristic of reverse diode 700 Fig. 8 ID = 10 A 700 Typ. gate charge Fig. 9 Typ. capacitances ID = 0.25 mA EAS [mJ] V(BR)DSS [V] 650 500 VDS [V] QG [nC] VSD [V] 140 140 TJ [°C] TJ [°C] Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080523a 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.