IXKC23N60C5

IXKC 23N60C5 CoolMOS™ 1) Power MOSFET ID25 = 23 A VDSS = 600 V RDS(on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data E72873  isolated back surface Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol Conditions ID = 11 A; TC = 25°C 600 V ± 20 V 23 16 A A 800 1.2 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = 18 A VGS(th) VDS = VGS; ID = 1.2 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz 2.5 TVJ = 25°C  VJ = 125°C T typ. max. 90 100 mW 3 3.5 V 5 µA µA 100 nA 50 2800 130 Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 18 A 60 14 20 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 18 A; RG = 3.3 Ω 10 5 60 5 RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved pF pF 80 nC nC nC ns ns ns ns 0.85 K/W • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20100303c 1-4 IXKC 23N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 16 A; VGS = 0 V 0.9 trr QRM IRM IF = 16 A; -diF /dt = 100 A/µs; VR = 400 V 450 12 70 max. 16 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating storage VISOL RMS leads-to-tab, 50/60 Hz, f = 1 minute FC mounting force Symbol Conditions Maximum Ratings -55...+150 -55...+150 °C °C 2500 V~ 11-65 / 2.4-11 N/lb Characteristic Values min. RthCH with heatsink compound typ. 0.28 K/W 3.1 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved max. 20100303c 2-4 IXKC 23N60C5 ISOPLUS220TM Outline A E D T A A2 b b2 b4 c D D1 E E1 e L L1 T L1 * Note 1 2X b4 2 3 2X e 3X b c 2X b2 A2 120 300 160 MILLIMETERS MIN MAX 5.00 4.00 3.00 2.50 0.90 1.30 1.25 1.65 2.35 2.55 1.00 0.70 15.00 16.00 12.00 13.00 10.00 11.00 7.50 8.50 2.55 BASIC 13.00 14.50 3.00 3.50 47.5 42.5 NOTE: 1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3. 2. This drawing will meet dimensional requirement of JEDEC SS Product Outline TO-273 except D and D1 dimension. L 1 INCHES MIN MAX .157 .197 .098 .118 .051 .035 .049 .065 .093 .100 .028 .039 .591 .630 .472 .512 .394 .433 .335 .295 .100 BASIC .512 .571 .138 .118 SYM VGS = 20 V 105 140 50 10 V TJ = 25°C 7V 8V TJ = 150°C 8V 10 V VGS = 20 V 6V 5.5 V 40 90 120 7V 200 75 80 30 60 I D [A] I D [A] P t ot [ W ] Ptot [ W] 100 6V 20 45 60 100 5.5 V 40 30 20 15 4.5 V 10 5V 0 4.5 V 0 0 0 5V 0 40 40 80 80 120 120 160 160 0 0 5 20 0 5 10 15 20 V DS [V] Fig. 2 Typ. output characteristics Fig. 3 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 15 V DS [V] TC [°C] T C [°C] Fig. 1 Power dissipation 10 20100303c 3-4 IXKC 23N60C5 0.5 160 0.3 TJV = 150°C ID = 18 A VGS = 10 V 0.25 5.5 V 0.4 VDS > 2·RDS(on) max · ID 25 °C 120 6.5 V 0.2 7V 5V 20 V DS (on) 0.15 0.2 80 98 % R R I D [A ] [ ] VDS = 0.3 DS (on) [ ] 6V TJ =150 °C typ 0.1 40 0.1 0.05 0 0 0 0 10 20 30 40 50 -60 -20 20 60 Fig. 4 Typ. drain-source on-state resistance characteristics 0 180 2 10 6 10 4 VDS = 120 V Ciss 1 20 V 8 10 3 10 2 10 1 C [pF ] 6 V GS I F [A ] [V ] 40 0V 0 10 VGS = 0 V f = 1 MHz 10 1 8 [V] GS 5 ID = 18 A pulsed 150 °C, 98% Coss 4 2 10 4 Fig. 6 Typ. transfer characteristics 12 25 °C, 98% 25 °C 10 2 V Fig. 5 Drain-source on-state resistance TJ =150 °C 10 140 T j [°C] I D [A] 10 100 -1 Crss 10 0 0 0.5 1 V SD 1.5 2 0 10 20 30 Q [V] Fig. 7 Forward characteristic of reverse diode gate 40 50 0 0 60 100 V Fig. 8 Typ. gate charge 1000 50 [nC] DS 150 200 1000 10000 [V] Fig. 9 Typ. capacitances 1.0 700 ID = 11 A ID = 0.25 mA 0.9 0.8 660 0.7 0.6 ZthJH [K/W] [V ] B R (DS S ) 500 620 V E AS [m J ] 750 0.5 0.4 0.3 250 580 0.2 0.1 0 0.0 540 20 60 100 140 T j [°C] Fig. 10 Avalanche energy 180 -60 -20 20 60 140 180 T j [°C] Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 100 1 10 100 tp [ms] Fig. 12 Typ. transient thermal impedance with heat transfer paste 20100303c 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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