IXKC40N60C

IXKC 40N60C CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 28 A RDS(on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS 600 V ± 20 V ID25 ID90 TC = 25°C TC = 90°C 28 19.2 A A EAS EAR single pulse; ID = 10 A; TC = 25°C repetitive; ID = 20 A; TC = 25°C 690 1 mJ mJ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 80 95 mΩ 3.9 V 50 500 µA µA 200 nA RDSon VGS = 10 V; ID = 28 A VGS(th) VDS = VGS; ID = 2 mA IDSS VDS = 600 V; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 25 V f = 1 MHz Qg Qgs Qgd VGS = 0 to 10 V; VDS = 350 V; ID = 40 A 175 22 66 VGS = 13 V; VDS = 380 V ID = 40 A; RG = 1.5 Ω; TVJ = 125°C 10 5 67 4.5 td(on) tr td(off) tf q isolated tab 2.1 TVJ = 25°C TVJ = 150°C 4800 1560 RthJC pF pF 230 nC nC nC ns ns ns ns 0.6 • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability K/W 1) IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved CoolMOS™ is a trademark of Infineon Technologies AG. 20080523a 1-4 IXKC 40N60C Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. IS VGS = 0 V VSD IF = 32 A; VGS = 0 V trr QRM IRM IF = 40 A; -diF /dt = 200 A/µs; VR = 480 V typ. max. 40 A 0.9 1.2 V 500 20 140 800 ns µC A Component Symbol Conditions TVJ Tstg operating storage VISOL RMS leads-to-tab, 50/60 Hz, f = 1 minute FC mounting force Symbol Conditions Maximum Ratings -55...+150 -55...+150 °C °C 2500 V~ 11-65 / 2.4-11 N/lb Characteristic Values min. RthCH with heatsink compound Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved typ. max. 0.2 K/W 2.7 g 20080523a 2-4 IXKC 40N60C ISOPLUS220TM Outline A E T SYM D A A2 b b2 b4 c D D1 E E1 e L L1 T L1 * Note 1 L 2X b4 1 3 2 2X e 3X b 2X b2 c A2 INCHES MIN MAX .157 .197 .098 .118 .035 .051 .049 .065 .093 .100 .028 .039 .591 .630 .472 .512 .394 .433 .295 .335 .100 BASIC .512 .571 .118 .138 NOTE: 1. Bottom heatsink is electrically isolated from Pin 1, 2, or 3. 2. This drawing will meet dimensional requirement of JEDEC SS Product Outline TO-273 except D and D1 dimension. 90 160 250 140 MILLIMETERS MIN MAX 4.00 5.00 2.50 3.00 0.90 1.30 1.65 1.25 2.55 2.35 1.00 0.70 15.00 16.00 12.00 13.00 10.00 11.00 7.50 8.50 2.55 BASIC 13.00 14.50 3.00 3.50 47.5 42.5 VGS = 20 V 10 V 8V 80 TJ = 150°C 200 70 7V 120 VGS = 20 V 10 V 7V TJ = 25°C 6V 60 100 150 ID [A] Ptot [ W] ID [A] 6.5 V 80 6V 100 50 5.5 V 40 60 5V 30 5.5 V 40 20 50 4.5 V 5V 20 10 4.5 V 0 0 40 80 120 160 20 TC [°C] Fig. 1 Power dissipation VDS [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved VDS [V] Fig. 3 Typ. output characteristics 20080523a 3-4 IXKC 40N60C 160 VDS > 2x ID x RDS(on)max TJ = 150°C 0.7 ID = 20 A VGS = 10 V 0.6 120 VGS = 0.5 0.4 100 ID [A] 4V 4.5 V 5V 5.5 V 6V 6.5 V 20 V RDS(on) [7] RDS(on) [7] 140 80 60 0.3 40 20 0.2 35 140 ID [A] Fig. 4 8 TJ [°C] Typ. drain-source on-state resistance VGS [V] Fig. 5 Drain-source on-state resistance Fig. 6 Typ. transfer characteristics ID = 40 A pulsed VGS = 0 V, f = 1 MHz 14 VDS max IF [A] VGS [V] C [ pF ] VDS max TJ = 25°C typ. TJ = 150°C typ. TJ = 25°C (98%) TJ = 150°C (98%) 40 80 200 240 280 Fig. 8 ID = 10 A 700 Typ. gate charge Fig. 9 Typ. capacitances ID = 0.5 mA EAS [mJ] V(BR)DSS [V] 650 500 VDS [V] QG [nC] Fig. 7 Forward characteristic of reverse diode 700 160 120 VSD [V] 140 140 TJ [°C] TJ [°C] Fig. 10 Avalanche energy Fig. 11 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080523a 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.