IXKR25N80C

IXKR 25N80C Advanced Technical Information CoolMOS™ 1) Power MOSFET ID25 = 25 A VDSS = 800 V RDS(on) = 125 mW in ISOPLUS247™ Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ISOPLUS 247™ D G E153432 G D S S G = Gate, D = Drain, S = Source Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C dv/dt VDS < VDSS; IF < 17 A | diF /dt | < 100 A/µs TVJ = 150°C EAS EAR ID = 4 A; L = 80 mH; TC = 25°C ID = 17 A; L = 3.3 mH; TC = 25°C Symbol Conditions 800 V ± 20 V 25 18 A A 6 V/ns 0.67 0.5 mJ mJ Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = ID90 VGS(th) VDS = 20 V; ID = 2 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C IGSS VGS = ± 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 640 V; ID = 34 A td(on) tr td(off) tf VGS = 10 V; VDS = 640 V ID = 34 A; RG = 2.2 Ω VF (reverse conduction) IF = 12.5 A; VGS = 0 V IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO-247AD compatible - Easy clip assembly • fast CoolMOS™ 1) power MOSFET 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density typ. max. 125 150 mW 4 V • Switched mode power supplies (SMPS) 50 µA µA 200 nA • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating 355 nC nC nC 2 RthJC • ISOPLUS247™ package with DCB Base 100 180 24 92 25 15 72 6 1 Applications ns ns ns ns 1.3 V 0.5 K/W 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20080526a -2 Advanced Technical Information IXKR 25N80C Component Symbol Conditions VISOL IISOL < 1 mA; 50/60 Hz Maximum Ratings TVJ Tstg TL 1.6 mm from case for 10 s FC mounting force with clip Symbol Conditions coupling capacity bewtween shorted pin and mounting tab in the case RthCH with heatsink compound -40...+150 -40...+125 °C °C 300 °C 20 ... 120 N typ. max. 30 pF 0.25 K/W 6 g Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved V~ Characteristic Values min. CP 2500 20080526a -2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.