IXKR40N60C

IXKR 40N60C CoolMOS™ 1) Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS(on) 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate D = Drain Isolated base S = Source Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C dv/dt VDS < VDSS; IF ≤ 50A;⎮diF/dt⎮≤ 100A/µs TVJ = 150°C EAS EAR ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Symbol Conditions 600 V ±20 V 38 25 A A 6 V/ns 1.8 1 J mJ Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. RDSon VGS = 10 V; ID = ID90 VGSth VDS = 20 V; ID = 3 mA; IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C 70 mΩ 2.1 3.9 60 V 25 µA µA • ISOPLUS247™ package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO-247AD compatible - Easy clip assembly • fast CoolMOS™ 1) power MOSFET 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • • • • • Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating 1) CoolMOS™ is a trademark of Infineon Technologies AG. IGSS VGS = ±20 V; VDS = 0 V 100 nA Qg Qgs Qgd VGS= 10 V; VDS = 350 V; ID = 50 A 250 25 120 nC nC nC td(on) tr td(off) tf VGS= 10 V; VDS = 380 V; ID = 50 A; RG = 1.8 Ω 20 30 110 10 ns ns ns ns VF (reverse conduction) IF = 20 A; VGS = 0 V RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 0.9 1.1 V 0.45 K/W 20080523a 1-2 IXKR 40N60C ISOPLUS247TM OUTLINE Component Symbol Conditions VISOL IISOL ≤ 1 mA; 50/60 Hz TVJ Tstg TL 1.6 mm from case for 10 s FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case RthCH with heatsink compound Weight Maximum Ratings 2500 V~ -40...+150 -40...+125 °C °C 300 °C 20 ... 120 N Characteristic Values min. typ. max. 30 pF 0.25 K/W 6 g The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD except screw hole and except Lmax. 20080523a © 2008 IXYS All rights reserved 2-2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.