IXKR47N60C5

IXKR 47N60C5 Advanced Technical Information CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 47 A RDS(on) max = 45 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS247TM D G G q D S S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V Symbol wiConditions ID = 11 A; TC = 25°C 600 V ± 20 V 47 32 A A 1950 3 mJ mJ 50 V/ns Characteristic Values (TVJ = 25°C, unless otherwise specified) min. RDSon VGS = 10 V; ID = 44 A VGS(th) VDS = VGS; ID = 3 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = ± 20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz 2.5 TVJ = 25°C TVJ = 150°C typ. max. 40 45 mΩ 3 3.5 V 10 µA µA 100 nA 50 6800 320 Qg Qgs Qgd VGS = 0 to 10 V; VDS = 400 V; ID = 44 A 150 35 50 td(on) tr td(off) tf VGS = 10 V; VDS = 400 V ID = 44 A; RG = 3.3 Ω 30 20 100 10 RthJC RthCH isolated back surface 0.25 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved nC nC nC ns ns ns ns 0.45 with heatsink compound Applications pF pF 190 • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness • Enhanced total power density K/W K/W • Switched mode power supplies (SMPS) • Uninterruptible power supplies (UPS) • Power factor correction (PFC) • Welding • Inductive heating • PDP and LCD adapter Advantages • Easy assembly: no screws or isolation foils required • Space savings • High power density • High reliability 1) CoolMOS™ is a trademark of Infineon Technologies AG. 20080523b 1-4 Advanced Technical Information IXKR 47N60C5 Source-Drain Diode Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. IS VGS = 0 V VSD IF = 44 A; VGS = 0 V 0.9 trr QRM IRM IF = 44 A; -diF /dt = 100 A/µs; VR = 400 V 600 17 60 max. 44 A 1.2 V ns µC A Component Symbol Conditions TVJ Tstg operating storage VISOL IISOL = 1 mA, 50/60 Hz, t = 1 min FC mounting force with clip Symbol Conditions Maximum Ratings coupling capacity between shorted pins and mounting tab in the case dS, dA dS, dA pin - pin pin - backside metal 2500 V~ 20-120 N typ. 30 tbd tbd Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved °C °C Characteristic Values min. CP -55...+150 -55...+150 max. pF mm mm 6 g 20080523b 2-4 IXKR 47N60C5 Advanced Technical Information ISOPLUS247TM Outline Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff-foberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. 350 250 TJ = 25°C VGS = 20 V 300 140 10 V 8 V 8V TJ = 150°C 7V 10 V 120 7V 200 6V VGS = 20 V 250 100 5.5 V 150 150 I D [A ] 80 I D [A ] Ptot [ W] 200 6V 60 100 5V 5.5 V 40 100 4.5 V 5V 50 20 50 4.5 V 0 0 0 40 80 TC [°C] 120 Fig. 1 Typ. power dissipation 160 0 0 5 10 V [V] Fig. 2 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved DS 15 20 0 5 10 V DS 15 20 [V] Fig. 3 Typ. output characteristics 20080523b 3-4 IXKR 47N60C5 Advanced Technical Information 0.16 0.12 320 ID = 44 A VGS = 10 V TJV = 150°C 5.5 V VDS = 5 V 6V 6.5 V 7V 0.12 VDS > 2·RDS(on) max · ID 25 °C 280 0.1 240 0.08 200 I D [A ] [Ω] DS (on) 0.08 0.06 98 % 160 150 °C R R DS (on) [Ω] 20 V 120 typ TJ = 0.04 0.04 80 0.02 40 0 0 0 20 40 60 80 100 0 -60 -20 20 60 I D [A] 140 180 0 2 4 T j [°C] Fig. 4 Typ. drain-source on-state resistance 10 100 8 10 [V] GS Fig. 6 Typ. transfer characteristics Fig. 5 Drain-source on-state resistance 3 6 V 12 10 5 ID = 11 A pulsed VGS = 0 V f = 1 MHz 10 10 4 10 3 Ciss VDS = 50 V 10 2 1 20 V 8 150 °C, 98% 25 °C 40 0V C [pF ] 6 V GS I F [A ] [V ] TJ = 150 °C 25 °C, 98% 10 1 Coss 10 2 10 1 10 0 4 Crss 2 10 0 0 0 0.5 1 V SD 1.5 2 0 50 100 Q [V] Fig. 7 Forward characteristic of reverse diode Fig. 8 2000 gate 0 150 Typ. gate charge 150 200 [V] Fig. 9 Typ. capacitances 10 0 660 0.5 620 V E 1000 -1 Z thJ C [ K /W ] B R (DS S ) [V ] 10 [m J ] DS ID = 0.25 mA 1500 AS 100 V 700 ID = 11 A 50 [nC] 0.2 D = tp/T 0.1 0.05 10 -2 0.02 500 580 0.01 0 540 20 60 100 140 T j [°C] Fig. 9 Avalanche energy 180 10 -60 -20 20 60 140 180 T j [°C] Fig. 10 Drain-source breakdown voltage IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 100 single pulse -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 12 Max. transient thermal impedance 20080523b 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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