IXRFD615

IXRFD615 15 A Low-Side RF MOSFET Driver Features Description  High Peak Output Current  Low Output Impedance  Low Quiescent Supply Current  Low Propagation Delay  High Capacitive Load Drive Capability  Wide Operating Voltage Range The IXRFD615 is a CMOS high -speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The IXRFD615 can source and sink 15 A of peak current while producing voltage rise and fall times of less than 5 ns and minimum pulse widths of 8 ns. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFD615 unmatched in performance and value. Applications  RF MOSFET Driver  Class D and E RF Generators  Multi-MHz Switch Mode Supplies  Pulse Transformer Driver  Pulse Laser Diode Driver  Pulse Generator The surface mount IXRFD615 is packaged in a lowinductance RF package incorporating advanced layout techniques to minimize stray lead inductances for optimum switching performance. Fig. 1- Block Diagram and Truth Table IN OUT 0 0 1 1 1 15 A Low-Side RF MOSFET Driver Absolute Maximum Ratings Parameter Value Supply Voltage VCC 30V Input Voltage Level VIN -5V to VCC + 0.3V All Other Pins -0.3V to VCC +0.3V Power Dissipation TA (AMBIENT) ≤ 25C TC (CASE) ≤ 25C 2W 100W Note: 1 Storage Temperature -40°C to 150°C Soldering Lead Temperature (10 seconds maximum) 300°C IXRFD615 Parameter Value Maximum Junction Temperature 150°C Operating Temperature Range -40°C to 85° C Thermal Impedance (Junction to Case) RӨJC 0.25° C/W Moisture Sensitivity Level (MSL) 3 Note: Operating the device outside of the “Absolute Maximum Ratings” may cause permanent damage. Typical values indicate conditions for which the device is intended to be functional but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum conditions for extended periods may impact device reliability. Note: 1- Limited by high frequency performance, not package dissipation. Electrical Characteristics Unless otherwise noted, TA = 25° C, 8V < VCC < 30V. All voltage measurements with respect to GND. IXRFD615 configured as described in Test Conditions. Symbol Parameter Test Conditions Min Typ Max VIH High input voltage 8V ≤ VCC ≤ 18V VIL Low input voltage 8V ≤ VCC ≤ 18V VHYS Input hysteresis VIN Input voltage range IIN VOH VOL Input current High output voltage Low output voltage 0V≤ VIN ≤VCC ROH High output resistance VCC = 15V IOUT = 100mA 0.42 Ω ROL Low output resistance VCC = 15V IOUT = 100mA 0.22 Ω IPEAK Peak output current VCC = 15V 15 A IDC Continuous output current Limited by package power dissipation 2.5 A tR Rise time VCC=15V CL=1nF CL=2nF 4 5 ns ns tF Fall time VCC =15V CL=1nF CL=2nF 4 5.5 ns ns tONDLY ON propagation delay VCC =15V CL=2nF 25 ns tOFFDLY OFF propagation delay VCC =15V CL=2nF 22 ns PW min Minimum pulse width FWHM VCC =15V CL=1nF 8 ns VCC Power supply voltage ICC Power supply current Recommended VCC = 15V, VIN = 0V VCC = 15V, VIN = 3.5V VCC = 15V, VIN = VCC 3.5 V 0.8 V V VCC + 0.3 V 10 µA V V 0.25 -5 -10 VCC - 0.025 0.025 8 Units 15 0.4 3.8 0.4 18 1 5 1 V mA mA mA CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling. All specifications are subject to change at any time without notice. 2 15 A Low-Side RF MOSFET Driver IXRFD615 Fig. 3 Fig. 2 VIH VIL ROH ROL Fig. 4 Fig. 5 CL = 4 nF CL = 4 nF CL = 2 nF Fig. 6 CL = 2 nF CL = 1 nF CL = 1 nF CL = 0 nF CL = 0 nF Fig. 7 tONDLY VIH = 3.5V tOFFDLY VIL = 0V 3 15 A Low-Side RF MOSFET Driver Fig, 8 IXRFD615 Fig, 9 CL = 4 nF CL = 4 nF CL = 2 nF CL = 2 nF CL = 1 nF CL = 1 nF CL = 0 nF Fig, 10 CL = 0 nF Fig, 11 30 MHz CL = 4 nF CL = 2 nF 20 MHz CL = 1 nF 10 MHz CL = 0 nF 5 MHz Fig, 12 Fig, 13 30 MHz 20 MHz 30 MHz 20 MHz 10 MHz 10 MHz 5 MHz 5 MHz 4 15 A Low-Side RF MOSFET Driver Fig. 14 Fig. 15 Fig. 16 Fig. 17 Fig. 18 Fig. 19 IXRFD615 5 15 A Low-Side RF MOSFET Driver IXRFD615 Fig. 20 Pin Description Symbol Function VCC Supply Voltage IN Input OUT Output Device Output. For application purposes, this lead is connected directly to the Gate of a MOSFET Power Ground System ground leads. Internally connected to all circuitry, these leads provide ground reference for the entire device and should be connected to a low noise analog ground plane for optimum performance. GND Description Positive power supply voltage input. These leads provide power to the entire device. Input signal-TTL or CMOS compatible. Fig. 21 Test Circuit Diagram IXRFD615 Fig. 22 Timing Diagram 6 15 A Low-Side RF MOSFET Driver IXRFD615 Fig. 23 Package Diagram End View Top View Vcc GND IN OUT Vcc GND Bottom View Side View DCB – Direct Copper Bond under Nickel plate on an Aluminum Nitride substrate. The DCB substrate is electrically isolated from any pin. 7 15 A Low-Side RF MOSFET Driver Applications Information Introduction Circuits capable of very high switching speeds and high frequency operation require close attention to several important issues. Key elements include circuit loop inductance, Vcc bypassing, and grounding. Circuit Loop Inductance The Vcc to Ground current path defines the loop that generates the inductive term. This loop must be kept as short as possible. The output lead must be no further than 0.375 inches (9.5 mm) from the gate of the MOSFET. Furthermore, the output ground leads must provide a balanced symmetric coplanar ground return for optimum operation. Vcc Bypassing In order to turn a MOSFET on properly, the IXRFD615 must be able to draw up to 15 A of current from the Vcc power supply in 2 ns to 6 ns (depending upon the input capacitance of the MOSFET being driven). Good performance requires very low impedance between the driver and the power supply. The most common method of achieving this low impedance is to bypass the power supply at the driver with a capacitance value much larger than the load capacitance. Usually, this is achieved by placing two or three different types of bypassing capacitors, with complementary impedance curves, very close to the driver itself. (These capacitors should be carefully selected for low inductance, low resistance, and high pulse current service.) Care should be taken to keep the lengths of the leads between these bypass capacitors and the IXRFD615 to an absolute minimum. IXRFD615 Output Lead Inductance Of equal importance to supply bypassing and grounding are issues related to the output lead inductance. Every effort should be made to keep the leads between the driver and its load as short and wide as possible, and treated as coplanar transmission lines. In configurations where the optimum configuration of circuit layout and bypassing cannot be used, a series resistance of a few ohms in the gate lead may be necessary to dampen ringing. Heat Sinking For high power operation, the bottom side metalized substrate should be placed in compression against an appropriate heat sink. The substrate is metalized for improved heat dissipation, and is not electrically connected to the device or to ground. See the technical note “DE-Series MOSFET and IC Mounting Instructions” on the IXYS Colorado website at www.ixyscolorado.com for detailed mounting instructions. The bypassing should be comprised of several values of MLC (Multi-Layer Ceramic) capacitors symmetrically placed on either side of the IC. Recommended values are 0.01uF and 0.47uF for bypass and at least two 4.7uF tantalums for bulk storage. Grounding In order for the design to turn the load off properly, the IXRFD615 must be able to drain 15 A of current into an adequate grounding system. There are two paths for returning current that need to be considered: Path one is between the IXRFD615 and its load, and path two is between the IXRFD615 and its power supply. Both of these paths should be as low in resistance and inductance as possible, and thus as short as practical. 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