IXTA3N120-TRL

IXTA3N120 IXTP3N120 IXTH3N120 High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 3A  4.5  RDS(on) TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 3 A IDM TC = 25C, Pulse Width Limited by TJM 12 A TO-220AB (IXTP) IA TC = 25C 3 A EAS TC = 25C 700 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 5 V/ns PD TC = 25C 200 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-247 & TO-220) Weight TO-263 TO-220 TO-247 G BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Characteristic Values Min. Typ. Max. 1200 2.5 G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages High Voltage Package Fast Intrinsic Diode Avalanche Rated Molding Epoxies meet UL 94 V-0 Flammability Classification High Blocking Voltage Advantages V 5.0 D (Tab) TO-247 (IXTH)  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS V    Easy to Mount Space Savings High Power Density 100 nA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved 25 A 1 mA 4.5  Applications    High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits DS98844F(0515) IXTA3N120 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 1.5 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf S 1100 1350 pF 110 Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 4.7 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 135 pF 40 60 pF 17 ns 15 ns 32 ns 18 ns 42 nC 8 nC 21 nC RthJC RthCS RthCS TO-220 Outline 2.6 Crss IXTP3N120 IXTH3N120 Pins: 1 - Gate 3 - Source 2 - Drain 0.62 °C/W TO-220 TO-247 0.50 0.21 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 3 A Repetitive, Pulse Width Limited by TJM 12 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 3A, VGS = 0V,-di/dt = 100A/s VR = 100V Note 700 TO-247 Outline ns 1: Pulse test, t  300s, duty cycle, d 2%. 1 - Gate 2,4 - Drain 3 - Source TO-263 Outline 1. Gate 2,4. Drain 3. Source Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA3N120 IXTP3N120 IXTH3N120 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 3.0 VGS = 10V 7V VGS = 10V 7V 6 2.5 6V 5 I D - Amperes I D - Amperes 2.0 1.5 4 6V 3 1.0 2 5V 0.5 1 0.0 0 5V 0 2 4 6 8 10 12 0 5 10 15 VDS - Volts 25 30 Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 3.0 3.0 VGS = 10V 7V VGS = 10V 2.6 6V RDS(on) - Normalized 2.5 2.0 I D - Amperes 20 VDS - Volts 1.5 5V 1.0 0.5 2.2 I D = 3A 1.8 I D = 1.5A 1.4 1.0 0.6 0.2 0.0 0 5 10 15 20 -50 25 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 3.5 2.6 VGS = 10V 2.4 3.0 TJ = 125ºC 2.5 2.0 I D - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25ºC 2.0 1.5 1.0 1.2 0.5 1.0 0.8 0.0 0 1 2 3 4 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 5 6 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA3N120 IXTP3N120 IXTH3N120 Fig. 8. Transconductance Fig. 7. Input Admittance 6 7 TJ = - 40ºC 6 5 TJ = 125ºC 25ºC - 40ºC 5 25ºC g f s - Siemens I D - Amperes 4 3 4 125ºC 3 2 2 1 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 1 2 3 4 5 6 7 8 40 45 I D - Amperes VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 9 10 VDS = 600V 8 I D = 1.5A 8 7 I G = 10mA VGS - Volts I S - Amperes 6 5 4 3 6 4 TJ = 125ºC TJ = 25ºC 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 VSD - Volts 15 20 25 30 35 QG - NanoCoulombs Fig.12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit 10 Ciss 1,000 ID - Amperes Capacitance - PicoFarads f = 1 MHz Coss 25µs 100µs 1ms 1 10ms 100 0.1 DC TJ = 150ºC TC = 25ºC Single Pulse Crss 10 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTA3N120 IXTP3N120 IXTH3N120 Fig. 13. Maximum Transient Thermal Impedance 0.7 Z (th)JC - ºC / W 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.01 0.1 1 Pulse Width - Second © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N120(4U) 5-06-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.