IXTA94N20X4

IXTA94N20X4 X4-Class Power MOSFETTM VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated = 200V = 94A  10.6m G S TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by T JM IA D (Tab) 94 A 220 A TC = 25C 47 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, T J  150°C 20 V/ns PD TC = 25C 360 W -55 ... +175 C 175 C Tstg -55 ... +15 C 260 °C 10..65 / 2.2..14.6 N/lb 2.5 g TSOLD Plastic Body for 10s FC Mounting Force Weight D = Drain Tab = Drain Features    TJM TJ G = Gate S = Source  International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications   Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1 & 2 © 2020 Littelfuse, Inc.   V 4.5  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls V 100 nA T J = 150C 20 500 A µA 10.6 m DS101010B(12/20) IXTA94N20X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 60 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 100 S 5.3  5050 pF 750 pF 4 pF 390 1670 pF pF 18 ns 9 ns Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 97 ns 7 ns 77 nC 21 nC 25 nC 0.42 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 94 A Repetitive, pulse Width Limited by T JM 376 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 47A, -di/dt = 200A/µs 130 1.1 17 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA94N20X4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 100 400 VGS = 10V 9V 8V 90 VGS = 10V 9V 350 7V 80 300 8V 60 I D - Amperes I D - Amperes 70 6V 50 40 250 7V 200 150 30 6V 100 20 5V 10 50 5V 0 0 0.2 0.4 0.6 0.8 1 0 1.2 0 5 10 V DS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 47A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 100 2.8 VGS = 10V 8V 7V 90 2.6 VGS = 10V 2.4 80 2.2 6V RDS(on) - Normalized 70 I D - Amperes 15 VDS - Volts 60 50 40 5V 30 2.0 I D = 94A 1.8 1.6 I D = 47A 1.4 1.2 1.0 20 0.8 10 0.6 4V 0.4 0 0 0.5 1 1.5 2 -50 2.5 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.5 175 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized -25 VDS - Volts TJ = 150oC 3.0 2.5 2.0 TJ = 25oC 1.5 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 1.0 0.5 0.5 0 50 100 150 200 I D - Amperes © 2020 Littelfuse, Inc. 250 300 350 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA94N20X4 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 100 160 90 140 VDS = 10V 80 120 ID - Amperes I D - Amperes 70 60 50 40 100 80 TJ = 150oC 25oC 60 30 - 40oC 40 20 20 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 175 4.0 4.5 TC - Degrees Centigrade 5.5 6.0 6.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 300 200 V DS = 10V 180 TJ = - 40oC 250 160 140 200 120 I S - Amperes g f s - Siemens 5.0 VGS - Volts 25oC 100 80 150oC 150 TJ = 150oC 100 60 TJ = 25oC 40 50 20 0 0 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 I D - Amperes 1.2 1.4 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V I D = 47A I G = 10mA 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 1.0 VSD - Volts 6 5 4 3 2 C iss 1,000 Coss 100 C rss 10 f = 1 MHz 1 0 1 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts 1,000 IXTA94N20X4 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 8 7 RDS(on) Limit 100 5 I D - Amperes EOSS - MicroJoules 6 4 3 100µs 10 1ms 2 1 TJ = 175oC TC = 25oC Single Pulse 1 0 0 20 40 60 80 100 120 140 160 180 DC 10ms 0.1 200 1 10 100 1,000 VDS - Volts V DS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 Littelfuse, Inc. IXYS REF: T_94N20X4 (206-S203) 9-13-19 IXTA94N20X4 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source Littelfuse reserves the right to change limits, test conditions and dimensions. IXTA94N20X4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc.