IXTA96P085T-TRL

IXTA96P085T IXTP96P085T IXTH96P085T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ RDS(on) P-Channel Enhancement Mode Avalanche Rated - 85V - 96A Ω 13mΩ TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings - 85 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 85 V VGSS Continuous ±15 V VGSM Transient ±25 V ID25 TC = 25°C - 96 A IDM TC = 25°C, Pulse Width Limited by TJM - 300 A IA EAS TC = 25°C TC = 25°C - 48 1 A J PD TC = 25°C 298 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G DS D (Tab) TO-247 (IXTH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA - 85 VGS(th) VDS = VGS, ID = - 250μA - 2.0 IGSS VGS = ± 15V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 10 μA - 750 μA RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V - 4.0 V 13 mΩ z Applications z z z z z z © 2013 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100025B(01/13) IXTA96P085T IXTP96P085T IXTH96P085T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 40 VDS = -10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz tr td(off) tf S 13.1 nF pF 460 pF Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs 66 1175 Crss td(on) VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 23 ns 34 ns 45 ns 22 ns 180 nC 52 nC 62 nC 0.42 °C/W RthJC RthCS TO-220 TO-247 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Pins: 1 - Gate 2 - Drain 3 - Source °C/W °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = - 48A, VGS = 0V, Note 1 trr QRM IRM IF = - 48A, -di/dt = -100A/μs VR = - 43V, VGS = 0V Note TO-247 Outline 55 100 - 3.6 - 96 A - 394 A -1.3 V ns nC A TO-220 Outline 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-263 Outline 1. 2. 3. 4. Gate Drain Source Drain Dim. Millimeter Min. Max. Inches Min. Max. A b b2 4.06 0.51 1.14 4.83 0.99 1.40 .160 .020 .045 .190 .039 .055 c c2 0.40 1.14 0.74 1.40 .016 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .280 .380 .320 E 9.65 10.41 .380 .405 E1 e L L1 L2 L3 L4 6.22 2.54 14.61 2.29 1.02 1.27 0 8.13 BSC 15.88 2.79 1.40 1.78 0.13 .270 .100 .575 .090 .040 .050 0 .320 BSC .625 .110 .055 .070 .005 Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA96P085T IXTP96P085T IXTH96P085T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC -350 -100 VGS = -10V - 9V - 8V - 7V -90 -80 - 8V -250 -60 ID - Amperes -70 ID - Amperes VGS = -10V - 9V -300 - 6V -50 -40 -30 - 7V -200 -150 - 6V -100 - 5V -20 -50 -10 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -1.4 -2 -4 -6 -8 -10 -12 -14 -16 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 48A Value vs. Junction Temperature -18 1.8 -100 VGS = -10V - 9V - 8V - 7V -80 VGS = -10V 1.6 R DS(on) - Normalized -90 ID - Amperes - 5V -70 -60 - 6V -50 -40 - 5V -30 -20 I D = - 96A 1.4 I D = - 48A 1.2 1.0 0.8 -10 0 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 48A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -110 1.8 VGS = -10V -90 ID - Amperes R DS(on) - Normalized TJ = 125ºC 1.6 1.4 1.2 -70 -50 -30 TJ = 25ºC 1.0 -10 0.8 0 -50 -100 -150 -200 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -250 -300 -350 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTA96P085T IXTP96P085T IXTH96P085T Fig. 8. Transconductance Fig. 7. Input Admittance -140 100 TJ = - 40ºC -120 80 25ºC g f s - Siemens ID - Amperes -100 -80 TJ = 125ºC 25ºC - 40ºC -60 125ºC 60 40 -40 20 -20 0 -2.5 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 0 -20 -40 -60 VGS - Volts -100 -120 -140 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode -10 -300 -9 -250 VDS = - 43V I D = - 48A -8 I G = -1mA -7 VGS - Volts -200 IS - Amperes -80 ID - Amperes -150 TJ = 125ºC -100 -6 -5 -4 -3 TJ = 25ºC -2 -50 -1 0 -0.2 0 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 0 20 40 60 VSD - Volts 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area - 1,000 100,000 f = 1 MHz 25µs 10ms 100ms - 100 10,000 ID - Amperes Capacitance - PicoFarads Ciss 100µs 1ms RDS(on) Limit Coss 1,000 DC - 10 TJ = 150ºC TC = 25ºC Single Pulse Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. -1 -1 - 10 VDS - Volts - 100 IXTA96P085T IXTP96P085T IXTH96P085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 44 44 RG = 1Ω, VGS = -10V RG = 1Ω, VGS = -10V 40 t r - Nanoseconds t r - Nanoseconds VDS = - 43V 36 32 28 I D VDS = - 43V 40 = - 48A 36 TJ = 25ºC 32 28 24 I D = - 24A 24 20 16 TJ = 125ºC 20 25 35 45 55 65 75 85 95 105 115 125 -24 -26 -28 -30 -32 -34 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 65 160 TJ = 125ºC, VGS = -10V 60 55 50 100 45 80 40 60 35 40 30 20 25 0 6 8 10 12 14 16 18 tf td(off) - - - - 60 I D = - 24A 23 50 I D = - 48A 21 45 20 40 19 25 20 35 45 55 54 TJ = 25ºC, 125ºC 21 50 20 46 19 -38 -40 -42 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved -44 -46 42 -48 t f - Nanoseconds t f - Nanoseconds 22 -36 105 115 35 125 tf td(off) - - - - 300 TJ = 125ºC, VGS = -10V VDS = - 43V 200 250 160 200 I D = - 24A, - 48A 120 150 80 100 40 50 0 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 20 t d(off) - Nanoseconds 58 t d(off) - Nanoseconds VDS = - 43V -34 95 350 240 62 23 -32 85 280 td(off) - - - - TJ = 125ºC, VGS = - 10V -30 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 66 tf -28 65 TJ - Degrees Centigrade 25 -26 55 22 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current -24 -48 65 VDS = - 43V 24 RG - Ohms 24 -46 RG = 1Ω, VGS = -10V 20 4 -44 t d(off) - Nanoseconds I D = - 48A, - 24A 120 2 -42 70 25 t f - Nanoseconds td(on) - - - - t d(on) - Nanoseconds t r - Nanoseconds tr 0 -40 26 70 180 VDS = - 43V -38 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 200 140 -36 ID - Amperes IXTA96P085T IXTP96P085T IXTH96P085T Fig. 19. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_96P085T(A6)11-08-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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