IXTC13N50

Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS(on) = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Maximum Ratings VDSS TJ = 25°C to 150°C 500 VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 VGS Continuous VGSM Transient E Test Conditions V V G LE T Symbol ±20 V ±30 V TC = 25°C 12 A TC = 25°C, pulse width limited by TJM 48 A IAR TC = 25°C 13 A EAR TC = 25°C 18 mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 140 W -55 ... +150 °C 150 °C z -55 ... +150 °C z 300 °C 3 g TJ Tstg TL 1.6 mm (0.062 in.) from case for 10 s O Weight BS TJM O ID25 IDM z z z VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 2.5 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = IT Notes 1, 2 V 4 V ±100 nA z z © 2003 IXYS All rights reserved 200 1 µA mA 0.4 Ω Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(