Preliminary Technical Information
IXTF200N10T
TrenchMVTM Power
MOSFET
VDSS
ID25
RDS(on)
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
= 100V
= 90A
Ω
≤ 7mΩ
ISOPLUS i4-PakTM (5-lead)
Symbol
Test Conditions
Maximum Ratings
VDSS
T J = 25°C to 175°C
100
V
VDGR
T J = 25°C to 175°C, RGS = 1MΩ
100
V
VGSM
Transient
± 30
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
90
A
500
A
TC = 25°C
40
A
EAS
TC = 25°C
1.5
J
PD
TC = 25°C
156
W
-55 ... +175
°C
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
2500
V
120..120 / 4.5..27
N/lb.
6
g
TJ
TL
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
VISOL
50/60Hz, t = 1 minute, IISOL < 1mA, RMS
Md
Mounting Force
Weight
G
S
S
D
G = Gate
S = Source
D
D = Drain
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Avalanche Rated
2500V Electrical Isolation
Advantages
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
100
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1
© 2009 IXYS CORPORATION, All Rights Reserved
V
4.5
V
±200
nA
5
μA
250
μA
7
mΩ
Easy to Mount
Space Savings
High Power Density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-Line UPS
Primary - Side Switch
High Current Switching Applications
DS99747B(03/09)
IXTF200N10T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min. Typ.
Max.
VDS = 10V, ID = 60A, Note 1
60
C iss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
C rss
td(on)
tr
td(off)
tf
S
9400
pF
1087
pF
140
pF
35
ns
31
ns
45
ns
34
ns
152
nC
47
nC
47
nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 3.3Ω (External)
Qg(on)
Qgs
96
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
Qgd
ISOPLUS i4-PakTM (5-Lead)
(IXTF) Outline
0.96 °C/W
RthJC
RthCH
°C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
200
A
ISM
Repetitive, Pulse Width Limited by TJM
500
A
VSD
IF = 50A, VGS = 0V, Note 1
1.0
V
t rr
QRM
IRM
IF = 100A, VGS = 0V,-di/dt = 100A/μs
76
205
5.4
VR = 50V
ns
nC
A
Leads:
1. Gate;
2, 3. Source;
4, 5. Drain
6. Isolated.
Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
All leads and tab are tin plated.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
350
200
VGS = 10V
9V
8V
180
160
250
ID - Amperes
140
ID - Amperes
VGS = 10V
9V
8V
300
120
7V
100
80
6V
60
200
7V
150
100
6V
40
50
20
5V
5V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1
2
2.4
ID - Amperes
140
120
7V
100
80
6V
60
2.2
2.0
1.8
I D = 200A
1.6
I D = 100A
1.4
1.2
1.0
40
0.8
20
0.6
5V
0
0.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
100
3.0
VGS = 10V
2.8
90
15V - - - -
2.6
80
TJ = 175ºC
2.4
70
2.2
ID - Amperes
RDS(on) - Normalized
6
VGS = 10V
2.6
RDS(on) - Normalized
160
5
2.8
VGS = 10V
9V
8V
180
4
Fig. 4. RDS(on) Normalized to ID = 100A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
200
3
VDS - Volts
VDS - Volts
2.0
1.8
1.6
1.4
60
50
40
30
1.2
20
1.0
10
TJ = 25ºC
0.8
0
0.6
0
40
80
120
160
200
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
240
280
320
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
IXYS REF: T_200N10T(6V)9-30-08-D
IXTF200N10T
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
160
TJ = - 40ºC
225
140
200
120
g f s - Siemens
ID - Amperes
175
150
125
TJ = 150ºC
25ºC
- 40ºC
100
25ºC
100
150ºC
80
60
75
40
50
20
25
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
7.5
25
50
75
VGS - Volts
10
270
9
240
8
210
7
180
150
TJ = 150ºC
90
125
150
175
200
225
250
Fig. 10. Gate Charge
300
VGS - Volts
IS - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
120
100
ID - Amperes
VDS = 50V
I D = 25A
I G = 10mA
6
5
4
3
TJ = 25ºC
60
2
30
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
1.2
20
40
60
80
100
120
140
160
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
1.00
100,000
Ciss
10,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1MHz
Coss
1,000
0.10
Crss
100
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
34
32
RG = 3.3Ω
33
31
VGS = 10V
32
VGS = 10V
31
VDS = 50V
VDS = 50V
30
29
I
D
t r - Nanoseconds
t r - Nanoseconds
33
= 50A
28
27
26
I
25
D
RG = 3.3Ω
TJ = 25ºC
30
29
28
27
TJ = 125ºC
26
= 25A
25
24
24
23
23
22
22
25
35
45
55
65
75
85
95
105
115
24
125
26
28
30
32
TJ - Degrees Centigrade
TJ = 125ºC, VGS = 10V
td(on) - - - -
80
65
I D = 50A
120
60
100
55
I D = 25A
80
50
60
45
40
40
20
35
0
4
6
8
10
12
14
16
18
36
60
34
55
I D = 50A
32
30
45
28
25
200
75
180
35
45
65
TJ = 25ºC
60
TJ = 25ºC
55
32
50
TJ = 125ºC
45
30
40
24
26
28
30
32
34
36
38
55
65
75
85
95
105
115
40
125
40
42
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
44
46
48
50
300
tf
td(off) - - - -
275
TJ = 125ºC, VGS = 10V
160
250
VDS = 50V
140
225
120
200
100
175
I D = 25A
80
I
D
150
= 50A
60
125
40
100
20
75
0
t d ( o f f ) - Nanoseconds
70
t f - Nanoseconds
RG = 3.3Ω, VGS = 10V
80
t d ( o f f ) - Nanoseconds
t f - Nanoseconds
td(off) - - - -
35
31
50
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
VDS = 50V
33
65
I D = 25A
TJ - Degrees Centigrade
tf
34
50
70
38
20
38
36
48
RG = 3.3Ω, VGS = 10V
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
TJ = 125ºC
46
td(off) - - - -
RG - Ohms
37
44
VDS = 50V
30
2
42
t d ( o f f ) - Nanoseconds
70
140
40
75
VDS = 50V
160
40
75
tf
t f - Nanoseconds
tr
38
42
85
t d ( o n ) - Nanoseconds
t r - Nanoseconds
220
180
36
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
200
34
ID - Amperes
50
2
4
6
8
10
12
14
16
18
20
RG - Ohms
IXYS REF: T_200N10T(6V)9-30-08-D
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