IXTH60N20X4

X4-Class Power MOSFET IXTH60N20X4 VDSS ID25 RDS(on) G TO-247 (IXFH) S G Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M 200 200 V V VGS VGSM Continuous Transient 20 30 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 60 106 A A IA EAS TC = 25C TC = 25C 30 350 A mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 250 W Md D Maximum Ratings -55 ... +175 C 175 C -55 ... +175 C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C 1.13 / 10 Nm/lb.in 6 g Weight D (Tab) D = Drain Tab = Drain Features    International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Mounting Torque S G = Gate S = Source  TJ TJM Tstg 200V 60A 21m D N-Channel Enhancement Mode Avalanche Rated TL = =   High Power Density Easy to Mount Space Savings Applications  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2021 Littelfuse, Inc.   V   4.5 V Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA 5 A 300 A TJ = 150C 17.6 21.0 m DS101046A(10/21) IXTH60N20X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 34 Ciss Coss 56 S 7.45  2450 pF 406 pF 0.95 pF 240 880 pF pF 13 ns 22 ns 52 ns 10 ns 33 nC 9 nC 11 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related VGS = 0V VDS = 0.8 • VDSS Time related Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.60 C/W RthJC RthCS C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 30A, -di/dt = 200A/µs 60 A 240 A 1.4 V 107 920 17 ns nC A 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 VR = 100V Note 1: Pulse test, t  300s, duty cycle, d 2 % Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXTH60N20X4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 90 180 VGS = 10V 9V 8V 80 8V 70 140 7V 60 120 I D - Amperes I D - Amperes V GS = 10V 9V 160 50 40 6V 30 7V 100 80 60 20 6V 40 10 20 5V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 0 2 4 6 8 VDS - Volts 60 3.0 V GS = 10V 9V 8V 7V 14 16 18 20 RDS(on) - Normalized 6V 30 20 V GS = 10V 2.6 40 I D - Amperes 12 Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150o C 50 10 VDS - Volts 5V 2.2 I D = 60A 1.8 I D = 30A 1.4 1.0 10 4V 0.6 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 3.2 -25 0 25 VDS - Volts 75 100 125 150 175 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current 4.5 1.2 VGS = 10V 4.0 BVDSS BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 50 TJ - Degrees Centigrade TJ = 150oC 3.0 2.5 2.0 1.5 TJ = 25oC 1.0 0.9 0.8 V GS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 I D - Amperes © 2021 Littelfuse, Inc. 140 160 180 200 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTH60N20X4 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 80 70 60 I D - Amperes 50 I D - Amperes VDS = 10V 70 60 40 30 20 50 40 30 TJ = 150oC 25oC 20 10 - 40oC 10 0 0 -50 -25 0 25 50 75 100 125 150 3.0 175 3.5 4.0 4.5 TC - Degrees Centigrade 5.5 6.0 6.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 180 100 VDS = 10V 160 TJ = - 40oC 80 140 120 60 25oC 40 150oC I S - Amperes g f s - Siemens 5.0 VGS - Volts 100 80 TJ = 150oC 60 TJ = 25oC 40 20 20 0 0 0 10 20 30 40 50 60 0.3 0.4 0.5 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V I D = 30A I G = 10mA 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 0.6 6 5 4 3 2 Ciss 1,000 Coss 100 10 Crss 1 f = 1 MHz 1 0 0 0 5 10 15 20 25 30 35 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 VDS - Volts 100 1.4 IXTH60N20X4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 5 4 RDS(on) Limit 100 3 I D - Amperes EOSS - MicroJoules 4 3 2 100µs 10 2 TJ = 175oC TC = 25oC Single Pulse 1 1 1 1ms 10ms 0 0 20 40 60 80 100 120 140 160 180 200 0.1 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2021 Littelfuse, Inc. IXYS REF: T_60N20X4(204-S203) 7-26-21 IXTH60N20X4 TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.