IXTL2N470

Advance Technical Information High Voltage Power MOSFET VDSS ID25 IXTL2N470 RDS(on) (Electrically Isolated Tab) = 4700V = 2A   20 ISOPLUS i5-PakTM N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 4700 V VDGR TJ = 25C to 150C, RGS = 1M 4700 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 2 A IDM TC = 25C, Pulse Width Limited by TJM 8 A PD TC = 25C 220 W - 55 ... +150 150 - 55 ... +150 C C C 300 260 °C °C  20..120 / 4.5..27 N/lb.  4000 V~ 8 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Mounting Force VISOL 50/60Hz, 1 Minute Weight G S Isolated Tab D G = Gate D = Drain S = Source Features   Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 4000V~ RMS Electrical Isolation Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages    Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V 200 nA IDSS VDS = 3.6kV, VGS = 0V VDS = 4.7kV VDS = 3.6kV 10 A 50 μA μA RDS(on) 3.5 Note 2, TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved 6.0 250 20 V Easy to Mount Space Savings High Power Density Applications     High Voltage Power Supplies Capacitor Discharge Applications Pulse Circuits Laser and X-Ray Generation Systems  DS100759(11/16) IXTL2N470 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 2.1 VDS = 60V, ID = 0.5 • ID25, Note 1 Ciss Coss 3.5 S 6860 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Integrated Gate Input Resistance Resistive Switching Times pF pF 4.0  40 ns VGS = 10V, VDS = 1kV, ID = 1A 34 ns 123 ns RG = 0 (External) 205 ns 180 nC 34 nC 83 nC Qg(on) Qgs 267 105 VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 Qgd 0.56 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 2 A ISM Repetitive, Pulse Width Limited by TJM 8 A VSD IF = IS, VGS = 0V, Note 1 3 V trr IF = 2A, -di/dt = 100A/μs, VR = 100V Notes: 1.75 μs 1. Pulse test, t  300s, duty cycle, d  2%. 2. Part must be heatsunk for high-temp Idss measurement. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTL2N470 Fig. 2. Output Characteristics @ TJ = 125ºC Fig. 1. Output Characteristics @ TJ = 25ºC 1.8 3.0 VGS = 10V VGS = 10V 1.6 6V 7V 2.5 2.0 1.2 1.5 I D - Amperes I D - Amperes 1.4 6.5V 1.0 0.8 5.5V 0.6 1.0 0.4 0.5 6V 5V 0.2 0.0 0.0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 VDS - Volts VDS - Volts Fig. 3. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Drain Current 70 2.4 2.4 VGS = 10V 2.2 VGS = 10V 2.2 RDS(on) - Normalized RDS(on) - Normalized 2.0 I D = 2A 1.8 I D = 1A 1.6 1.4 1.2 1.0 2.0 TJ = 125ºC 1.8 1.6 1.4 1.2 0.8 TJ = 25ºC 1.0 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 I D - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.8 2.0 1.6 1.4 1.6 I D - Amperes I D - Amperes 1.2 1.2 0.8 1.0 0.8 TJ = 125ºC 0.6 25ºC 0.4 0.4 - 40ºC 0.2 0.0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2016 IXYS CORPORATION, All Rights Reserved 100 125 150 4.0 4.5 5.0 5.5 VGS - Volts 6.0 6.5 7.0 IXTL2N470 Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 6 6 TJ = - 40ºC 5 5 4 4 I S - Amperes g f s - Siemens 25ºC 125ºC 3 TJ = 125ºC 3 TJ = 25ºC 2 2 1 1 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.2 0.3 0.4 0.5 0.6 I D - Amperes 0.8 0.9 1.0 30 35 40 Fig. 10. Capacitance Fig. 9. Gate Charge 10,000 10 VDS = 1000V 9 Ciss Capacitance - PicoFarads I D = 1A 8 I G = 10mA 7 VGS - Volts 0.7 VSD - Volts 6 5 4 3 1,000 Coss 100 Crss 2 f = 1 MHz 1 10 0 0 20 40 60 80 100 120 140 160 0 180 5 10 15 20 25 VDS - Volts QG - NanoCoulombs Fig. 12. Resistive Switching Times vs. External Gate Resistance Fig. 11. Forward-Bias Safe Operating Area 300 10 RDS(on) Limit VDS = 1kV, VGS = 10V Switching Times - Nanoseconds 25µs 100µs - Amperes 1 1ms I D 10ms 0.1 TJ = 150ºC 100ms TC = 25ºC Single Pulse DC ID = 1A, TJ = 25ºC 250 200 tf 150 tr t d(off) 100 t d(on) 50 1s 0.01 0 100 1,000 10,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 2 3 4 5 6 RG(ext) - Ohms 7 8 9 10 IXTL2N470 Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds ISOPLUS i5-PakTM (IXTL) Outline E Q A S A2 U R T Q1 D R1 4 1 2 3 L1 1 = Gate 2 = Source 3 = Drain 4 = Isolated L c b1 b2 e1 © 2016 IXYS CORPORATION, All Rights Reserved e IXYS REF: T_2N470(H9-P640) 11-01-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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