IXTM5N100A

Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS(on) 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Test Conditions VDSS TJ = 25°C to 150°C 1000 VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 VGS Continuous VGSM Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM PD TC = 25°C TJM T stg Weight V V V ±30 V 5 A 20 A 180 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in. O Mounting torque TO-204 = 18 g, TO-247 = 6 g O Test Conditions VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 G = Gate, S = Source, l l l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. D G D = Drain, TAB = Drain Features l 5N100 5N100A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2000 IXYS All rights reserved TO-204 AA (IXTM) l 2 D (TAB) °C 300 BS Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol TO-247 AD (IXTH) LE T ±20 TJ Md Maximum Ratings E Symbol V 4.5 V ±100 nA 250 1 µA mA 2.4 2.0 Ω Ω International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times Applications l l l l Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers Advantages l l l Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density 93009C (4/96) 1-4 IXTH 5 N100 IXTM 5 N100 Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 4 C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 td(off) RG = 4.7 Ω, (External) tf Q g(on) VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC S 2600 pF 180 pF 45 pF 35 100 ns 20 50 ns 100 200 ns 30 80 ns 88 130 21 30 38 70 nC nC nC 0.7 R thCK K/W 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. A Repetitive; pulse width limited by TJM 20 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V O BS O 5 © 2000 IXYS All rights reserved 1 2 Terminals: 1 - Gate 3 - Source 3 2 - Drain Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 b2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅ P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC LE T Q gs 6 TO-247 AD (IXTH) Outline E Symbol IXTH 5 N100A IXTM 5 N100A 900 TO-204AA (IXTM) Outline ns Pins Dim. 1 - Gate 2 - Source Case - Drain Millimeter Min. Max. 6.4 11.4 3.42 .97 1.09 22.22 10.67 11.17 5.21 5.71 Inches Min. Max. .250 .450 .135 .038 .043 .875 .420 .440 .205 .225 L 7.93 ∅ p 3.84 4.19 ∅p 1 3.84 4.19 q 30.15 BSC R 13.33 R1 4.77 s 16.64 17.14 .312 .151 .165 .151 .165 1.187 BSC .525 .188 .655 .675 A A1 ∅b ∅D e e1 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTH 5 N100 IXTM 5 N100 Fig. 1 Output Characteristics 9 9 7V 8 TJ = 25°C 7 ID - Amperes 6 5 4 3 6V 2 4 3 1 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 5 10 15 20 25 30 LE T 0 TJ = 25°C 5 2 1 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current 3.0 Fig. 4 Temperature Dependence of Drain to Source Resistance 2.50 TJ = 25°C 2.6 2.4 O VGS = 10V 2.2 VGS = 15V 1.8 0 2 4 6 8 2.00 1.75 1.50 ID = 2.5A 1.25 1.00 0.75 BS 2.0 RDS(on) - Normalized 2.25 2.8 RDS(on) - Ohms 6 E 7 ID - Amperes Fig. 2 Input Admittance VGS = 10V 8 0.50 -50 10 -25 0 ID - Amperes O 50 75 1.2 VGS(th) BVDSS 1.1 5N100A 4 5N100 3 2 BV/VG(th) - Normalized 6 5 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 7 1.0 0.9 0.8 0.7 0.6 1 0 -50 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes IXTH 5 N100A IXTM 5 N100A -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXTH 5 N100 IXTM 5 N100 Fig.7 Gate Charge Characteristic Curve IXTH 5 N100A IXTM 5 N100A Fig.8 Forward Bias Safe Operating Area 10 10µs VDS = 500V ID = 2.5A IG = 10mA 8 10 ID - Amperes VGE - Volts 6 5 4 3 1ms 1 2 1 0 0.1 10 20 30 40 50 60 70 80 10ms 1 10 Gate Charge - nCoulombs 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 1000 VDS - Volts Fig.10 Source Current vs. Source to Drain Voltage 9 Ciss 8 Coss Crss O f = 1 MHz VDS = 25V ID - Amperes 7 BS Capacitance - pF Fig.9 Capacitance Curves 100 100ms LE T 0 100µs Limited by RDS(on) 7 E 9 0 5 10 15 20 6 5 4 3 2 TJ = 25°C 1 0 0.0 25 TJ = 125°C 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Volts Fig.11 Transient Thermal Impedance 1.000 Thermal Response - K/W O D=0.5 D=0.2 0.100 D=0.1 D=0.05 D=0.02 D=0.01 0.010 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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