IXTP100N15X4

IXTA100N15X4 IXTP100N15X4 X4-Class Power MOSFETTM VDSS ID25 RDS(on) = 150V = 100A  11.5m  D N-Channel Enhancement Mode Avalanche Rated G TO-263 (IXTA) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 150 V VDGR TJ = 25C to 175C, RGS = 1M 150 V D (Tab) VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 100 A IDM TC = 25C, Pulse Width Limited by TJM 180 A IA TC = 25C 50 A EAS TC = 25C 800 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 375 W -55 ... +175 C TJ TO-220 (IXTP) G D S G = Gate S = Source 175 C Tstg -55 ... +175 C  300 260 °C °C  10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220     Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1 & 2 4.5 TJ = 150C © 2019 IXYS CORPORATION, All Rights Reserved 9.2 High Power Density Easy to Mount Space Savings Applications V  V  100 nA 10 500 International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D = Drain Tab = Drain Features TJM TL TSOLD D (Tab) A A    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 11.5 m DS100903B(11/19) IXTA100N15X4 IXTP100N15X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 50A, Note 1 58 RGi Gate Input Resistance Ciss Coss 96 S 4.1  3970 pF 650 pF 1.1 pF 450 1760 pF pF 18 ns 7 ns 120 ns 10 ns 74 nC 18 nC 18 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.40 C/W RthJC RthCS TO-220 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 100 A ISM Repetitive, pulse Width Limited by TJM 400 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 50A, -di/dt = 100A/μs 90 300 6.7 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTA100N15X4 IXTP100N15X4 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 100 300 VGS = 10V 8V 90 VGS =10V 9V 7V 250 80 200 I D - Amperes I D - Amperes 70 8V 60 50 6V 40 30 20 7V 150 100 6V 50 5V 10 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 150 C 100 3.4 VGS = 10V 8V 90 15 VDS - Volts 80 VGS = 10V 3.0 7V I D - Amperes RDS(on) - Normalized 2.6 70 6V 60 50 40 30 5V 2.2 I D = 100A 1.8 I D = 50A 1.4 1.0 20 0.6 10 4V 0.2 0 0 5.0 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 175 1.2 BVDSS / VGS(th) - Normalized 4.5 4.0 RDS(on) - Normalized -50 3 3.5 o TJ = 150 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 1.0 0.5 0.5 0 50 100 150 200 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 250 300 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTA100N15X4 IXTP100N15X4 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 200 120 180 100 160 140 I D - Amperes 80 I D - Amperes VDS = 10V 60 40 120 100 80 o TJ = 150 C 60 o 25 C o - 40 C 40 20 20 0 0 -50 -25 0 25 50 75 100 125 150 3.5 175 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 300 180 o TJ = - 40 C VDS = 10V 160 250 200 120 o I S - Amperes g f s - Siemens 140 25 C 100 80 o 150 C 60 150 100 o TJ = 150 C 40 50 20 o TJ = 25 C 0 0 0 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 I D - Amperes 1.2 1.4 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 f = 1 MHz VDS = 75V Capacitance - PicoFarads I D = 50A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 10 Crss 1 0 1 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTA100N15X4 IXTP100N15X4 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Output Capacitance Stored Energy 1000 5.0 4.5 RDS(on) Limit 4.0 25μs 3.5 I D - Amperes E OSS - MicroJoules 100 3.0 2.5 2.0 100μs 10 1ms 1.5 1 o 1.0 TJ = 175 C 0.5 TC = 25 C Single Pulse o 0.0 DC 10ms 100ms 0.1 0 20 40 60 80 100 120 140 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: T_100N15X4 (15) 6-26-18 IXTA100N15X4 IXTP100N15X4 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA100N15X4 IXTP100N15X4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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