IXTP120N20X4

X4-Class Power MOSFET IXTP120N20X4 VDSS ID25 RDS(on) D N-Channel Enhancement Mode Avalanche Rated G S TO-220 (IXTP) Symbol Test Conditions VDSS TJ = 25C to 175C 200 V VDGR TJ = 25C to 175C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 120 A IDM TC = 25C, Pulse Width Limited by TJM 240 A IA TC = 25C 60 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 417 W -55 ... +175 C TJM 175 C Tstg -55 ... +175 C 300 °C Md G D S Maximum Ratings G = Gate S = Source  Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque   Nm/lb.in 3 g Weight D = Drain Tab = Drain International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   1.13 / 10 D (Tab) Features  TJ TL = 200V = 120A  9.5m  High Power Density Easy to Mount Space Savings Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2021 Littelfuse, Inc.   V 4.5  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls V 100 nA TJ = 150C 25 A 500 µA 9.5 m DS101055A(10/21) IXTP120N20X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 72 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 120 S 6  6100 pF 865 pF 1.8 pF 510 2000 pF pF Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 13 ns 24 ns 100 ns 12 ns 108 nC 27 nC 27 nC 0.36 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 120 A ISM Repetitive, pulse Width Limited by TJM 480 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 60A, -di/dt = 200A/µs 190 3.2 33.7 VR = 100V ns µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP120N20X4 Fig. 1. Output Characteristics @ TJ = 25o C Fig. 2. Extended Output Characteristics @ TJ = 25oC 120 450 VGS = 10V 9V 8V 100 VGS = 15V 10V 9V 400 7V 350 8V 300 I D - Amperes I D - Amperes 80 6V 60 40 250 7V 200 150 6V 100 20 5V 50 5V 0 0 0.2 0.4 0.6 0.8 1 0 1.2 0 5 10 VDS - Volts 120 3.0 VGS = 10V 8V 7V VGS = 10V 2.6 RDS(on) - Normalized 6V 80 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 100 15 VDS - Volts 60 40 5V 20 2.2 I D = 120A 1.8 I D = 60A 1.4 1.0 0.6 4V 0.2 0 0 4.5 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 175 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized -50 3 TJ = 150oC 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2021 Littelfuse, Inc. 300 350 400 450 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTP120N20X4 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 120 120 100 100 I D - Amperes 140 I D - Amperes 140 80 60 VDS = 10V 80 60 40 40 20 20 TJ = 150oC 25oC - 40oC 0 0 -50 -25 0 25 50 75 100 125 150 3.0 175 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 200 400 TJ = - 40oC VDS = 10V 350 160 I S - Amperes g f s - Siemens 300 25oC 120 150oC 80 250 200 150 TJ = 150oC 100 40 TJ = 25oC 50 0 0 20 40 60 80 100 120 140 0 160 0.2 0.4 0.6 0.8 I D - Amperes 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V I D = 60A I G = 10mA 10,000 Capacitance - PicoFarads 8 7 VGS - Volts 1.0 VSD - Volts 6 5 4 3 2 C iss 1,000 C oss 100 C rss 10 f = 1 MHz 1 0 1 0 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs Littelfuse reserves the right to change limits, test conditions and dimensions. 1 10 100 VDS - Volts IXTP120N20X4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 10 1000 9 RDS(on) Limit 8 I D - Amperes EOSS - MicroJoules 100 7 6 5 4 100µs 10 3 1ms 1 TJ = 175oC TC = 25oC Single Pulse 2 1 10ms DC 0 0 20 40 60 80 100 120 140 160 180 0.1 200 1 10 100 1,000 V DS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 0.4 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2021 Littelfuse, Inc. IXYS REF: T_120N20X4 (207) 9-10-21 IXTP120N20X4 TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. Littelfuse reserves the right to change limits, test conditions and dimensions.