IXTP150N15X4

IXTP150N15X4 IXTH150N15X4 X4-Class Power MOSFETTM VDSS ID25 RDS(on) = 150V = 150A  7.2m  D N-Channel Enhancement Mode Avalanche Rated G TO-220 (IXTP) S Symbol Test Conditions G D S Maximum Ratings VDSS TJ = 25C to 175C 150 V VDGR TJ = 25C to 175C, RGS = 1M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 150 A IDM TC = 25C, Pulse Width Limited by TJM 260 A IA TC = 25C 75 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 480 W -55 ... +175 C TJ TJM 175 C Tstg -55 ... +175 C 300 260 °C °C 1.13 / 10 Nm/lb.in 3 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-220 TO-247 G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 150 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) D (Tab) D = Drain Tab = Drain     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  High Power Density Easy to Mount Space Savings V 4.5 10 500 TJ = 150C © 2019 IXYS CORPORATION, All Rights Reserved. S Features  V 100 nA VGS = 10V, ID = 0.5 • ID25, Note 1 D G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) TO-247 (IXTH) 6.2 A A 7.2 m Applications      Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100904B(11/19) IXTP150N15X4 IXTH150N15X4 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 70 Ciss Coss 120 S 1.3  5500 pF 900 pF 4 pF 660 2100 pF pF 23 ns 5 ns 60 ns 6 ns 105 nC 30 nC 28 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.31 C/W RthJC RthCS TO-220 TO-247 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 150 A ISM Repetitive, pulse Width Limited by TJM 600 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 75A, -di/dt = 100A/μs 100 350 7 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 75V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP150N15X4 IXTH150N15X4 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 500 VGS = 10V VGS = 10V 8V 140 450 7V 120 8V 350 I D - Amperes 100 I D - Amperes 9V 400 80 6V 60 300 250 7V 200 150 40 6V 100 20 5V 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 150oC 3.0 VGS = 10V 8V 140 15 VDS - Volts VGS = 10V 2.6 7V I D - Amperes 100 R DS(on) - Normalized 120 6V 80 60 5V 40 2.2 I D = 150A 1.8 I D = 75A 1.4 1.0 0.6 20 4V 0.2 0 0 4.5 0.5 1 2 2.5 -50 3 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 175 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 1.5 o TJ = 150 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 0.7 VGS(th) 0.6 1.0 0.5 0.5 0 50 100 150 200 250 300 350 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved. 400 450 500 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTP150N15X4 IXTH150N15X4 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 180 160 160 140 140 120 I D - Amperes 120 I D - Amperes VDS = 10V 100 80 60 100 80 60 o TJ = 150 C o 40 40 25 C o - 40 C 20 20 0 0 -50 -25 0 25 50 75 100 125 150 3.0 175 3.5 4.0 4.5 TC - Degrees Centigrade 6.0 6.5 500 220 200 o VDS = 10V 450 TJ = - 40 C 180 400 160 350 140 o I S - Amperes g f s - Siemens 5.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 25 C 120 100 o 150 C 80 300 250 200 150 60 o TJ = 150 C 40 100 20 50 0 o TJ = 25 C 0 0 20 40 60 80 100 120 140 160 180 0.2 0.4 0.6 0.8 I D - Amperes 1.0 1.2 1.4 1.6 1.8 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 75V Capacitance - PicoFarads I D = 75A 8 I G = 10mA 7 VGS - Volts 5.0 VGS - Volts 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXTP150N15X4 IXTH150N15X4 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 8 RDS(on) Limit 7 25μs 100 5 I D - Amperes E OSS - MicroJoules 6 4 3 2 100μs 10 1ms 1 o 10ms TJ = 175 C DC o TC = 25 C Single Pulse 1 0 0.1 0 20 40 60 80 100 VDS - Volts 1 120 140 1 10 Fig. 15. Maximum Transient Thermal Impedance 100 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.5 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved. IXYS REF: T_150N15X4 (17) 6-20-18 IXTP150N15X4 IXTH150N15X4 TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTP150N15X4 IXTH150N15X4 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved.