IXTP1N120P

Polar VHVTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS(on) = 1200V = 1.0A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.0 A IDM TC = 25°C, pulse width limited by TJM 1.8 A IA EAR EAS TC = 25°C TC = 25°C TC = 25°C 1.0 10 100 A mJ mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 63 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg G (TAB) TO-220 (IXTP) G (TAB) D S G = Gate S = Source D = Drain TAB = Drain Features TL 1.6mm (0.062) from case for 10s 300 °C z TSOLD Plastic body for 10s 260 °C z Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.50 3.00 g g (TO-220) S z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1200 V VGS(th) VDS = VGS, ID = 50μA 2.5 IGSS VGS = ±20V, VDS = 0V ±50 nA IDSS VDS = VDSS VGS = 0V 5 μA 200 μA Applications: z RDS(on) 4.5 TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2007 IXYS CORPORATION, All rights reserved 15.5 20 Easy to mount Space savings High power density V z z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls Ω DS99870 (08/07) IXTA1N120P IXTP1N120P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS= 30V, ID = 0.5 • ID25, Note 1 0.55 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz 0.92 S 550 25 5.4 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30Ω (External) 20 28 54 27 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 17.6 3.5 10.6 nC nC nC RthJC RthCS (TO-220) 0.5 2.0 °C/W °C/W td(on) tr td(off) tf Source-Drain Diode TO-220 (IXTP) Outline Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 1.0 A ISM Repetitive 3.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.0A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 900 ns 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. TO-263 (IXTA) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA1N120P IXTP1N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Output Characteristics @ 125ºC 1.4 1.0 VGS = 10V 7V 1.2 VGS = 10V 6V 0.9 0.8 0.7 6V ID - Amperes ID - Amperes 1.0 0.8 0.6 0.6 0.5 5V 0.4 0.3 0.4 0.2 5V 0.2 0.1 0.0 0.0 0 5 10 15 20 25 30 35 0 5 10 15 VDS - Volts 20 25 Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 35 40 Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.8 2.4 VGS = 10V 2.6 VGS = 10V 2.2 TJ = 125ºC 2.4 2.2 RDS(on) - Normalized RDS(on) - Normalized 30 VDS - Volts 2.0 I D = 1A 1.8 1.6 I D = 0.5A 1.4 1.2 1.0 2.0 1.8 1.6 1.4 1.2 0.8 TJ = 25ºC 1.0 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1 1.2 1.4 ID - Amperes TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.1 0.8 1 0.7 0.9 0.6 ID - Amperes ID - Amperes 0.8 0.7 0.6 0.5 0.5 TJ = 125ºC 25ºC -40ºC 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2007 IXYS CORPORATION, All rights reserved 100 125 150 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 VGS - Volts 4.8 5 5.2 5.4 5.6 5.8 IXTA1N120P IXTP1N120P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 1.6 2.8 1.4 2.4 2.0 1.0 IS - Amperes g f s - Siemens 1.2 TJ = - 40ºC 25ºC 125ºC 0.8 0.6 1.6 TJ = 125ºC 1.2 TJ = 25ºC 0.8 0.4 0.4 0.2 0.0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.3 0.4 0.5 ID - Amperes 0.7 0.8 0.9 1 1.1 1.2 VSD - Volts Fig. 10. Capacitance Fig. 9. Gate Charge 10 1,000 VDS = 600V 9 Capacitance - PicoFarads I D = 0.5A 8 I G = 10mA 7 VGS - Volts 0.6 6 5 4 3 Ciss 100 Coss 10 2 Crss f = 1 MHz 1 0 1 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 10.0 1.0 0.1 0.0 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_1N120P(2A-245)10-27-06