IXTP24N65X2M

IXTP24N65X2M X2-Class Power MOSFET VDSS ID25 RDS(on) = 650V = 24A  145m  (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 24 A IDM TC = 25C, Pulse Width Limited by TJM 48 A IA TC = 25C 12 A EAS TC = 25C 600 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 37 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ G G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 650 VGS(th) VDS = VGS, ID = 250µA 3.0   IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 12A, Note 1   V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications V 5.0 D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features  TL TSOLD DS    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 5 A 100 A 145 m DS100696C(10/18) IXTP24N65X2M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 12A, Note 1 13 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 22 S 1.1  2060 pF 1470 pF 1.2 pF 83 336 pF pF 20 ns 25 ns 50 ns 19 ns 36 nC 9 nC 13 nC Crss Co(er) Co(tr) Effective Output Capacitance VGS = 0V Energy related VDS = 0.8 • VDSS Time related td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 12A RG = 10 (External) Qg(on) Qgs OVERMOLDED TO-220 (IXTP...M) oP VGS = 10V, VDS = 0.5 • VDSS, ID = 12A Qgd 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source 3.37 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 24 A ISM Repetitive, pulse Width Limited by TJM 96 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 12A, -di/dt = 100A/µs 390 3.3 17 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTP24N65X2M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 24 VGS = 10V 8V VGS = 10V 50 20 8V 7V 40 I D - Amperes I D - Amperes 16 12 6V 8 7V 30 20 6V 10 4 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 24 3.8 VGS = 10V VGS = 10V 3.4 20 7V RDS(on) - Normalized 3.0 I D - Amperes 16 6V 12 8 2.6 I D = 24A 2.2 1.8 I D = 12A 1.4 1.0 4 5V 0.6 4V 0.2 0 0 1 2 3 4 5 6 7 8 -50 9 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.6 150 1.2 VGS = 10V 4.2 BVDSS 1.1 BVDSS / VGS(th) - Normalized 3.8 o TJ = 125 C RDS(on) - Normalized -25 VDS - Volts 3.4 3.0 2.6 2.2 o 1.8 TJ = 25 C 1.4 1.0 0.9 VGS(th) 0.8 0.7 1.0 0.6 0.6 0 5 10 15 20 25 30 35 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTP24N65X2M Fig. 7. Input Admittance Fig. 8. Transconductance 36 45 32 40 28 35 g f s - Siemens I D - Amperes 24 o TJ = 125 C 20 o 25 C o - 40 C 16 12 o TJ = - 40 C 30 o 25 C 25 o 125 C 20 15 8 10 4 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 40 Fig. 10. Gate Charge 10 80 VDS = 325V 70 I D = 12A 8 I G = 10mA 60 50 VGS - Volts I S - Amperes 20 I D - Amperes 40 o TJ = 125 C 30 6 4 o 20 TJ = 25 C 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 12 VSD - Volts 16 20 24 28 32 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 18 100000 f = 1 MHz 16 14 1000 EOSS - MicroJoules Capacitance - PicoFarads 10000 Ciss 100 Coss 10 12 10 8 6 4 1 2 Crss 0.1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 36 IXTP24N65X2M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 100 RDS(on) Limit 25µs 1 100µs 1 0.1 1ms o TJ = 150 C 0.1 0.01 10ms o TC = 25 C Single Pulse 0.01 10 Z (th)JC - K / W I D - Amperes 10 100 VDS - Volts © 2018 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: T_24N65X2M(X4-S602) 3-24-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.