IXTR102N65X2

IXTR102N65X2 X2-Class Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated 650V 54A 33m RDS(on)  D (Electrically Isolated Tab) = = G S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient  30  40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 54 204 A A IA EAS TC = 25C TC = 25C 25 3 A J PD TC = 25C 330 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V 20..120/4.5..27 N/lb 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features       Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Low QG Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 51A, Note 1 TJ = 125C © 2020 IXYS CORPORATION, All Rights Reserved   High Power Density Easy to Mount Space Savings V 5.0 V 100 nA 25 500 A A 33 m Applications Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls  DS100681B(1/20) IXTR102N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 51A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 50 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 82 S 0.7  10.9 nF 6100 pF 12.6 pF 367 1420 pF pF 37 ns 28 ns 67 ns 11 ns 152 nC 57 nC 33 nC Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 51A RG = 2(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 51A Qgd 0.38 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 102 A ISM Repetitive, Pulse Width Limited by TJM 408 A VSD IF = IS , VGS = 0V, Note 1 1.4 V trr QRM IRM 450 IF = 51A, -di/dt = 100A/s 11.7 VR = 100V, VGS = 0V 52 ns  µC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR102N65X2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 110 240 VGS = 10V 8V 100 VGS = 10V 90 80 70 I D - Amperes I D - Amperes 200 8V 160 7V 7V 60 6V 50 40 120 80 6V 30 20 40 5V 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 VDS - Volts 110 3.5 VGS = 10V 7V R DS(on) - Normalized 80 I D - Amperes 25 6V 70 60 50 40 30 VGS = 10V 3.0 90 5V 20 2.5 I D = 102A 2.0 I D = 51A 1.5 1.0 0.5 10 4V 0.0 0 0 4.5 1 2 3 4 5 6 7 8 -50 9 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 150 V GS = 10V 4.0 BVDSS / VGS(th) - Normalized 1.1 3.5 RDS(on) - Normalized 20 Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 100 15 VDS - Volts o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.0 0.9 V GS(th) 0.8 0.7 1.0 0.6 0.5 0 40 80 120 160 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 200 240 -60 -40 -20 0 20 40 60 80 T J - Degrees Centigrade 100 120 140 160 IXTR102N65X2 Fig. 8. Input Admittance Fig. 7. Maximum Drain Current vs. Case Temperature 60 160 140 50 120 I D - Amperes I D - Amperes 40 30 20 100 o TJ = 125 C 80 o 25 C o - 40 C 60 40 10 20 0 0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 160 300 o TJ = - 40 C 140 250 120 200 I S - Amperes g f s - Siemens o 25 C 100 o 125 C 80 60 150 100 o TJ = 125 C 40 o TJ = 25 C 50 20 0 0 0 20 40 60 80 100 120 140 160 0.2 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.3 1.4 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 V DS = 325V Ciss Capacitance - PicoFarads I D = 51A 8 VGS - Volts 1.2 VSD - Volts I G = 10mA 6 4 10,000 1,000 C oss 100 10 2 C rss f = 1 MHz 1 0 0 20 40 60 80 100 120 140 160 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXTR102N65X2 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 70 1000 RDS(on) Limit 100 50 25µs I D - Amperes E OSS - MicroJoules 60 40 30 10 100µs 20 1 1ms o TJ = 150 C o TC = 25 C Single Pulse 10 0 10ms 0.1 0 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: T_102N65X2(X8-R4T50) 8-05-15-B IXTR102N65X2 ISOPLUS247 (IXTR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTR102N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved