IXTR200N10P

PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A Ω 8 mΩ RDS(on) ≤ Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 100 V VGS ±20 V VGSM ±30 V 120 A 75 A 400 A ID25 TC = 25° C ID(RMS) External lead current limit IDM TC = 25° C, pulse width limited by TJM IAR TC = 25° C 60 A EAR TC = 25° C 100 mJ EAS TC = 25° C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 300 W -55 ... +175 175 -55 ... +150 °C °C °C TJ TJM Tstg VISOL 50/60 Hz, RMS, 1 minute FC Mounting Force 2500 V~ 20..120/4.6..20 Nm/lb Weight 5 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 500µA 3.0 V 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V VGS = 0 V 25 250 1000 µA µA µA RDS(on) VGS = 10 V, ID = 60 A VGS = 15 V, ID = 400A 8.0 mΩ mΩ © 2006 IXYS All rights reserved ISOPLUS 247TM (IXTR) E153432 Maximum Ratings TJ = 150° C TJ = 175° C 5.5 ISOLATED TAB G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(