IXTR36P15P

Preliminary Technical Information PolarPTM Power MOSFET IXTC36P15P IXTR36P15P VDSS ID25 = -150V = - 22A Ω ≤ 120mΩ (Electrically Isolated Tab) RDS(on) P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C -150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ -150 V VGSS Continuous ± 20 V VGSM Transient ± 30 V ID25 TC = 25°C - 22 A IDM TC = 25°C, Pulse Width Limited by TJM -100 A IA TC = 25°C - 36 A EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C 10 V/ns PD TC = 25°C 150 W - 55 ... +175 175 - 55 ... +175 °C °C °C 300 260 °C °C 2500 V~ TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS, t = 1minute FC Mounting Force (ISOPLUS220) 11..65 / 25..14.6 N/lb FC Mounting Force (ISOPLUS247) 20..120 / 4.5..27 N/lb Weight ISOPLUS220 ISOPLUS247 2 5 g g D Isolated S ISOPLUS220 (IXTC) E153432 G D S G = Gate S = Source Isolated D = Drain Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250μA -150 VGS(th) VDS = VGS, ID = - 250μA - 3.0 IGSS VGS = ± 20V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 10 μA - 250 μA RDS(on) VGS = -10V, ID = -18A, Note 1 TJ = 150°C © 2011 IXYS CORPORATION, All rights reserved z z V - 5.0 Easy to Mount Space Savings High Power Density Applications V 120 mΩ z z z z z z High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS99792A(01/11) IXTC36P15P IXTR36P15P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = -18A, Note 1 11 19 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf S 2950 pF 615 pF 115 pF 28 ns 37 ns 45 ns 14 ns Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = -18A RG = 5Ω (External) Qg(on) Qgs ISOPLUS220TM Outline VGS = -10V, VDS = 0.5 • VDSS, ID = -18A Qgd 55 nC 21 nC 20 nC Note: Bottom heatsink (Pin 4) is electrically isolated from Pin 1,2, or 3. 1.00 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM Note Characteristic Values Min. Typ. Max. - 36 A Repetitive, Pulse Width Limited by TJM -100 A IF = -18A, VGS = 0V, Note 1 - 3.0 V 150 2.0 IF = - 25, -di/dt = -100A/μs VR = -100V, VGS = 0V Ref: IXYS CO 0177 R0 ISOPLUS 247TM Outline ns μC 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.