IXTR90P20P

IXTR90P20P PolarPTM Power MOSFET VDSS ID25 RDS(on) = =  - 200V - 53A  48m P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 200 V VDGR TJ = 25C to 150C, RGS = 1M - 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA - 53 A - 270 A TC = 25C - 90 A EAS TC = 25C 3.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 312 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb 6 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 HZ , RMS t = 1min Md Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features        Silicon chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation Avalanche Rated Fast Intrinsic Diode The Rugged PolarPTM Process Low QG Low Drain-to-Tab Capacitance Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max.  BVDSS VGS = 0V, ID = - 250A VGS(th) VDS = VGS, ID = -1mA IGSS VGS = 20V, VDS = 0V 100 nA IDSS VDS = VDSS , VGS = 0V - 50 A - 250 A RDS(on) VGS = -10V, ID = - 45A, Note 1 © 2016 IXYS CORPORATION, All Rights Reserved - 200  - 2.0 TJ = 125C Easy to Mount Space Savings High Power Density V - 4.5 V 48 m Applications      High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators DS99932D(6/16) IXTR90P20P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = - 45A, Note 1 30 Ciss Coss VGS = 0V, VDS = - 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5 • VDSS, ID = - 45A RG = 1 (External) Qg(on) Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 45A Qgd ISOPLUS247 (IXTR) Outline 51 S 12 nF 2210 pF 250 pF 32 ns 60 ns 89 ns 28 ns 205 nC 45 nC 80 nC RthJC 1 = Gate 2,4 = Drain 3 = Source 0.40C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. - 90 A Repetitive, Pulse Width Limited by TJM - 360 A VSD IF = - 45A, VGS = 0V, Note 1 - 3.2 V trr IF = - 45A, -di/dt = -150A/s QRM IRM Note VR = -100V, VGS = 0V 315 ns 6.6 C - 42 A 1: Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR90P20P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -90 -240 VGS = -10V - 9V - 8V -80 VGS = -10V - 9V -200 -70 - 8V - 7V -160 ID - Amperes ID - Amperes -60 -50 - 6V -40 -30 -120 - 7V -80 -20 - 5V - 6V -40 - 5V -10 0 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -10 -20 -25 -30 Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 45A Value vs. Junction Temperature 2.4 VGS = -10V - 9V - 8V -80 VGS = -10V 2.0 -70 R DS(on) - Normalized - 7V -60 -50 - 6V -40 -30 -20 I D = - 90A 1.6 I D = - 45A 1.2 0.8 - 5V -10 0 0.4 0 -1 -2 -3 -4 -5 -6 -7 -8 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 45A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 -60 2.4 VGS = -10V -50 TJ = 125ºC 2.2 2.0 -40 ID - Amperes R DS(on) - Normalized -15 VDS - Volts -90 ID - Amperes -5 VDS - Volts 1.8 1.6 -30 -20 1.4 1.2 -10 TJ = 25ºC 1.0 0 0.8 0 -30 -60 -90 -120 -150 ID - Amperes © 2016 IXYS CORPORATION, All Rights Reserved -180 -210 -240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTR90P20P Fig. 8. Transconductance Fig. 7. Input Admittance 100 -120 TJ = - 40ºC 25ºC 125ºC -100 80 70 g f s - Siemens -80 ID - Amperes TJ = - 40ºC 90 -60 -40 25ºC 60 50 125ºC 40 30 20 -20 10 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts -80 -100 -120 -140 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -270 -10 -240 -9 -210 -8 VDS = -100V I D = - 45A VGS - Volts -180 IS - Amperes I G = -1mA -7 -150 -120 TJ = 125ºC -90 -6 -5 -4 -3 TJ = 25ºC -60 -2 -30 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 -4.5 20 40 60 80 100 120 140 160 200 220 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance - 1000 100,000 RDS(on) Limit f = 1MHz TJ = 150ºC 25µs Ciss - 100 TC = 25ºC Single Pulse 100µs 10,000 ID - Amperes Capacitance - PicoFarads 180 QG - NanoCoulombs VSD - Volts Coss 1ms - 10 1,000 10ms -1 100ms Crss DC 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 0.1 - 10 - 100 VDS - Volts - 1000 IXTR90P20P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: T_90P20P(B9)03-25-09-D Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.