IXTV110N25TS

IXTH110N25T IXTV110N25TS TrenchTM Power MOSFET VDSS ID25 = 250V = 110A  26m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 110 300 A A IA EAS TC = 25C TC = 25C 25 1 A J PD TC = 25C 694 W dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns -55 to +150 C TJ G G = Gate S = Source +150 C -55 to +150 C 300 260 °C °C 1.13/10 Nm/lb.in  11..65/2.5..14.6 N/lb  6 4 g g Md Mounting Torque (TO-247) FC Mounting force (PLUS220SMD) Weight TO-247 PLUS220SMD S D (Tab) TJM Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s D (Tab) S PLUS220SMD(IXTV_S) Tstg TL TSOLD D D = Drain Tab = Drain Features International Standard Packages Avalanche Rated  High Current Handling Capability  Fast Intrinsic Rectifier  Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2   V 5.0 V 200 nA 5 A 250 μA 26 m  Applications       © 2015 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies DS99904C(5/15) IXTH110N25T IXTV110N25TS Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 25A Qgd TO-247 Outline 110 S 9400 pF 850 pF 55 pF 19 ns 27 ns 60 ns 27 ns 157 nC 40 nC 50 nC 0.18 C/W RthJC RthCS C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 350 A VSD IF = 55A, VGS = 0V, Note 1 1.2 V trr IRM QRM IF = 55A, -di/dt = 250A/s, VR = 100V, VGS = 0V Notes: 170 27 2.3 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD Outline ns A μC 1. Pulse test, t  300s, duty cycle, d 2%. 2. On through-hole package, RDS(ON) kelvin test contact location must be 5mm or less from the package body. Terminals: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH110N25T IXTV110N25TS Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 250 VGS = 10V 8V VGS = 10V 8V 7V 100 200 I D - Amperes I D - Amperes 7V 6V 80 60 5.5V 40 150 6V 100 50 20 5V 5V 0 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 0 2 4 6 VDS - Volts 3.2 VGS = 10V 8V 7V 6V 60 40 5V 20 16 18 20 2.4 I D = 110A 2.0 I D = 55A 1.6 1.2 0.4 0 1 2 3 4 5 6 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Drain Current vs. Case Temperature 120 o VGS = 10V 25 TJ - Degrees Centigrade VDS - Volts TJ = 125 C 100 2.6 I D - Amperes RDS(on) - Normalized 14 0.8 0 3.0 12 VGS = 10V 2.8 RDS(on) - Normalized I D - Amperes 80 3.4 10 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 100 8 VDS - Volts 2.2 1.8 80 60 40 1.4 o TJ = 25 C 20 1.0 0 0.6 0 50 100 150 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 200 250 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTH110N25T IXTV110N25TS Fig. 8. Transconductance Fig. 7. Input Admittance 160 180 o 140 120 o TJ = 125 C 100 g f s - Siemens I D - Amperes TJ = - 40 C 160 140 o 25 C o - 40 C 80 60 o 25 C 120 100 o 125 C 80 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 0 6.2 20 40 60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 120 140 160 120 140 160 Fig. 10. Gate Charge 10 300 250 9 VDS = 125V 8 I D = 25A I G = 10mA 7 200 VGS - Volts I S - Amperes 80 I D - Amperes 150 o TJ = 125 C 100 6 5 4 3 o TJ = 25 C 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 60 VSD - Volts 80 100 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1 C iss 10,000 Z (th)JC - K / W Capacitance - PicoFarads f = 1 MHz C oss 1,000 0.1 0.01 100 C rss 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH110N25T IXTV110N25TS Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 32 30 RG = 2Ω , VGS = 15V RG = 2Ω , VGS = 15V 30 VDS = 125V VDS = 125V t r - Nanoseconds t r - Nanoseconds 28 26 I D = 110A 24 I D = 55A o TJ = 25 C 28 26 24 o TJ = 125 C 22 22 20 18 20 25 35 45 55 65 75 85 95 105 115 40 50 90 100 td(on) 25 30 23 25 20 2 3 4 5 6 7 8 9 t f - Nanoseconds 35 td(off) RG = 2Ω, VGS = 15V 30 26 62 I D = 110A 22 58 21 18 54 19 14 10 25 35 45 55 75 85 95 105 115 50 125 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 110 100 td(off) RG = 2Ω, VGS = 15V tf 90 26 o TJ = 125 C o TJ = 25 C 80 70 60 50 o 200 I D = 55A, 110A VDS = 125V t f - Nanoseconds o TJ = 25 C TJ = 125 C, VGS = 15V 70 160 50 120 30 80 t d ( o f f ) - Nanoseconds 28 240 td(off) o 90 t d ( o f f ) - Nanoseconds VDS = 125V 22 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 30 66 I D = 55A RG - Ohms tf 70 VDS = 125V t d ( o f f ) - Nanoseconds 27 I D = 110A, 55A t d ( o n ) - Nanoseconds 40 120 74 34 29 o 110 38 tf VDS = 125V t f - Nanoseconds 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature TJ = 125 C, VGS = 15V 24 70 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 32 60 I D - Amperes 31 45 30 T J - Degrees Centigrade 50 t r - Nanoseconds 20 125 TJ = 125 C 20 20 30 40 50 60 70 80 90 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 100 110 40 120 10 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_110N25T(8W)5-14-12-B