IXTX240N075L2

Advance Technical Information IXTK240N075L2 IXTX240N075L2 LinearL2TM Power MOSFET w/Extended FBSOA VDSS ID25 = = < RDS(on) 75V 240A  7m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 75 V VDGR TJ = 25C to 150C, RGS = 1M 75 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IL(RMS) IDM TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, pulse width limited by TJM 240 160 720 A A A IA EAS TC = 25C TC = 25C 240 3 A J PD TC = 25C 960 W TJ -55...+150  TJM 150  C -55...+150  C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) D 300 260 °C °C 1.13/10 Nm/lb.in 20..120 /4.5..27 N/lb 10 6 g g D (Tab) S PLUS247 (IXTX) G D C Tstg TL TSOLD G D (Tab) S G = Gate S = Source D = Drain Tab = Drain Features     Designed for linear operation International standard packages Avalanche rated Guaranteed FBSOA at 75C Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 75 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 TJ = 125C © 2016 IXYS CORPORATION, All rights reserved V 4.5 V 200 nA 10  A 50 A  Easy to mount  Space savings  High power density Applications      Solid state circuit breakers Soft start controls Linear amplifiers Programmable loads Current regulators 7 m DS100769(12/16) IXTK240N075L2 IXTX240N075L2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs 60 VDS = 10V, ID = 60A, Note 1 86 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 110 A E S 19 nF 4420 pF 1470 pF 34 ns 200 ns 136 ns 47 ns 546 nC 86 nC 225 nC RthJC TO-264 Outline Q S R D Q1 R1 1 2 3 L1 L c b1 x2 e Terminals: b2 b A1 0P 4 1 = Gate 2,4 = Drain 3 = Source BACK SIDE 0.13 C/W RthCS 0.15      C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 75V, ID = 7.7A, TC = 75C, Tp = 5s 575 W PLUS 247TM Outline A Source-Drain Diode E A2 D2 R Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 240 A ISM Repetitive, pulse width limited by TJM 960 A VSD IF = 100A, VGS = 0V, Note 1 1.5 V trr IRM QRM IF = 120A, -di/dt = 100A/s, VR = 37.5V, VGS = 0V Note: 206 18.8 1.9 ns A μC E1 Q D1 D 1 2 4 3 L1 L C A1 b 3 PLCS b4 b2 2 PLCS e 2 PLCS Terminals: 1 - Gate 2,4 - Drain 3 - Source 1. Pulse test, t  300s; duty cycle, d  2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK240N075L2 IXTX240N075L2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 VGS = 20V 12V 10V 9V 800 11V 10V 7V 160 I D - Amperes I D - Amperes 200 VGS = 20V 13V 8V 120 6V 600 9V 8V 400 80 7V 200 40 6V 5V 5V 4V 0 0.0 0.5 1.0 0 1.5 2.0 0 2 4 6 VDS - Volts 2.2 240 VGS = 20V 15V 12V 10V 9V 8V 12 14 16 18 20 VGS = 10V 2.0 7V R DS(on) - Normalized I D - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 120A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 200 8 VDS - Volts 160 6V 120 80 1.8 1.6 I D = 240A 1.4 I D = 120A 1.2 1.0 5V 40 0.8 4V 0 0.6 0.0 0.5 1.0 1.5 2.0 2.5 -50 3.0 -25 0 Fig. 5. RDS(on) Normalized to ID = 120A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 180 3.0 VGS = 10V 20V 2.6 25 TJ - Degrees Centigrade VDS - Volts 160 External Lead Limit 2.2 ID - Amperes RDS(on) - Normalized 140 TJ = 125ºC 1.8 120 100 80 60 1.4 TJ = 25ºC 40 1.0 20 0.6 0 0 100 200 300 400 500 I D - Amperes © 2016 IXYS CORPORATION, All rights reserved 600 700 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTK240N075L2 IXTX240N075L2 Fig. 8. Transconductance Fig. 7. Input Admittance 220 600 TJ = - 40ºC 200 180 TJ = - 40ºC 25ºC 125ºC 400 160 g f s - Siemens I D - Amperes 500 300 200 25ºC 140 125ºC 120 100 80 60 40 100 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 100 200 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 400 500 600 Fig. 10. Gate Charge 10 800 VDS = 37.5V 9 700 I D = 120A 8 I G = 10mA 600 7 TJ = 25ºC 500 VGS - Volts I S - Amperes 300 I D - Amperes TJ = 125ºC 400 300 6 5 4 3 200 2 100 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2.2 VSD - Volts 50 100 150 200 250 300 350 400 450 500 Fig. 12. Maximum Transient Thermal Impedance 550 QG - NanoCoulombs 1 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance aaaaa 0.3 100,000 0.1 C iss Z(th)JC - K / W Capacitance - PicoFarads f = 1 MHz 10,000 C oss 0.01 C rss 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTK240N075L2 IXTX240N075L2 Fig. 14. Forward-Bias Safe Operating Area Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC @ TC = 75ºC 1,000 1,000 25µs RDS(on) Limit RDS(on) Limit 25µs 100µs 100µs 100 External Lead Limit External LeadLimit I D - Amperes 1ms 10ms 100ms DC 10 I D - Amperes 100 1ms 10ms 100ms 10 DC TJ = 150ºC TJ = 150ºC TC = 25ºC Single Pulse TC = 75ºC Single Pulse 1 1 1 10 VDS - Volts © 2016 IXYS CORPORATION, All rights reserved 100 1 10 100 VDS - Volts IXYS REF: T_240N075L2(9R-T07)12-13-16 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.