IXTY14N60X2

IXTY14N60X2 X2-Class Power MOSFET VDSS ID25 RDS(on) D = 600V = 14A  250m N-Channel Enhancement Mode G S TO-252 (IXTY) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 14 A IDM TC = 25C, Pulse Width Limited by TJM 18 A IA TC = 25C 7 A EAS TC = 25C 150 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 15 V/ns PD TC = 25C 180 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 260 °C 0.35 g TJ TSOLD Plastic Body for 10s Weight S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features     International Standard Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250µA 600 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V   © 2020 Littelfuse, Inc. 4.5 V  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 100 nA TJ = 125C 10 A 150 A 250 m DS100998A(5/20) IXTY14N60X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 7 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 12 S 5  740 pF 1310 pF 20 pF 55 160 pF pF 23 ns 27 ns 75 ns 17 ns 16.7 nC 4.7 nC 7.7 nC Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.69 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 14 A ISM Repetitive, pulse Width Limited by TJM 56 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 7A, -di/dt = 100A/µs 320 4.3 27.0 ns µC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. Littelfuse reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY14N60X2 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 14 32 V GS = 10V 8V 12 7V 24 I D - Amperes 10 I D - Amperes VGS = 10V 8V 28 8 6V 6 4 7V 20 16 12 6V 8 2 4 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 VDS - Volts 14 3.5 VGS = 10V 7V 6V R DS(on) - Normalized I D - Amperes 20 VGS = 10V 3.0 10 8 6 4 5V 2.5 I D = 14A 2.0 I D = 7A 1.5 1.0 0.5 2 4V 0.0 0 0 1 2 3 4 5 6 7 8 -50 9 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 4.0 Fig. 6. Maximum Drain Current vs. Case Temperature 16 V GS = 10V 14 3.5 12 3.0 o TJ = 125 C I D - Amperes R DS(on) - Normalized 15 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 12 10 VDS - Volts 2.5 2.0 1.5 10 8 6 4 o TJ = 25 C 1.0 2 0 0.5 0 4 8 12 16 I D - Amperes © 2020 Littelfuse, Inc. 20 24 28 32 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTY14N60X2 Fig. 8. Transconductance 20 18 18 16 16 14 14 12 10 o TJ = 125 C 8 o 25 C o 25 C 12 10 o 125 C 8 - 40 C 6 o TJ = - 40 C o g f s - Siemens I D - Amperes Fig. 7. Input Admittance 20 6 4 4 2 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 2 4 6 8 VGS - Volts 10 12 14 16 18 20 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 VDS = 300V 45 40 I D = 7A 8 I G = 10mA 30 25 20 6 V GS - Volts I S - Amperes 35 o 4 TJ = 125 C 15 o TJ = 25 C 10 2 5 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 2 4 6 8 10 12 14 16 18 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10000 100 Ciss 1000 100 10 I D - Amperes Capacitance - PicoFarads RDS(on) Limit Coss 100µs 1 1ms 10 o 0.1 TJ = 150 C 10ms o f = 1 MHz DC TC = 25 C Single Pulse Crss 1 0.01 1 10 100 1000 VDS - Volts Littelfuse reserves the right to change limits, test conditions and dimensions. 10 100 VDS - Volts 1,000 IXTY14N60X2 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 Littelfuse, Inc. IXYS REF: T_14N60X2 (Z3-702) 12-20-19 IXTY14N60X2 TO-252 Outline 1 - Gate 2 - Source 3 - Drain Littelfuse reserves the right to change limits, test conditions and dimensions. IXTY14N60X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 Littelfuse, Inc.