IXTY1R4N120PHV

IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 1200V = 1.4A  13  RDS(on) TO-252 (IXTY..HV) G S D (Tab) TO-252 (IXTY) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 1.4 A IDM TC = 25C, Pulse Width Limited by TJM 3.0 A IA TC = 25C 1.4 A EAS TC = 25C 150 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 86 W S -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 / HV TO-263 TO-220 D (Tab) TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Low QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 100μA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2   V 4.5 V 100 nA 5 A 300 A TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved 10.5 13.0  High Power Density Easy to Mount Space Savings Applications DC-DC Converters Switch-Mode and Resonant-Mode Power Supplies  AC and DC Motor Drives   Discharge Circiuts in Lasers, Spark Igniters, RF Generators  High Voltage Pulse Power Applications   DS99871E(6/18) IXTY1R4N120PHV IXTY1R4N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs 0.8 VDS = 20V, ID = 0.5 • ID25, Note 1 1.3 S 666 pF 36 pF 7.6 pF 24.8 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd td(on) tr td(off) tf 4.4 nC 12.8 nC 25 ns 27 ns 78 ns 29 ns Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 25 (External) 1.45 C/W RthJC RthCS IXTA1R4N120P IXTP1R4N120P TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 1.4 A ISM Repetitive, Pulse Width Limited by TJM 4.2 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 1.4A, -di/dt = 100A/μs, VR = 100V 900 ns Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXTY1R4N120PHV IXTY1R4N120P o o Fig. 2. Output Characteristics @ TJ = 125 C Fig. 1. Output Characteristics @ TJ = 25 C 1.4 2.2 VGS = 10V 7V 2 1.6 1.0 I D - Amperes 6V 1.4 VGS = 10V 6V 1.2 1.8 I D - Amperes IXTA1R4N120P IXTP1R4N120P 1.2 1 0.8 0.8 5V 0.6 0.4 0.6 0.4 5V 0.2 0.2 0 0.0 0 5 10 15 20 25 30 0 5 10 15 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 0.7A Value vs. Junction Temperature 3.2 25 30 35 40 Fig. 4. RDS(on) Normalized to ID = 0.7A Value vs. Drain Current 2.6 2.4 VGS = 10V 2.8 20 VDS - Volts VGS = 10V o TJ = 125 C RDS(on) - Normalized R DS(on) - Normalized 2.2 2.4 I D = 1.4A 2.0 I D = 0.7A 1.6 1.2 2.0 1.8 1.6 1.4 o TJ = 25 C 1.2 0.8 1.0 0.8 0.4 -50 -25 0 25 50 75 100 125 0 150 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 I D - Amperes TJ - Degrees Centigrade Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature Fig. 5. Maximum Drain Current vs. Case Temperature 1.2 1.6 BVDSS / VGS(th) - Normalized 1.4 I D - Amperes 1.2 1.0 0.8 0.6 0.4 BVDSS 1.1 1.0 0.9 VGS(th) 0.8 0.2 0.7 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2018 IXYS CORPORATION, All Rights Reserved 100 125 150 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXTY1R4N120PHV IXTY1R4N120P IXTA1R4N120P IXTP1R4N120P Fig. 8. Transconductance Fig. 7. Input Admittance 2.0 2.8 o 2.4 2.0 g f s - Siemens I D - Amperes 1.5 TJ = - 40 C 1.0 o TJ = 125 C o 25 C o - 40 C 0.5 o 25 C 1.6 o 125 C 1.2 0.8 0.4 0.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 0.2 0.4 0.6 0.8 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 1.2 1.4 1.6 1.8 2 Fig. 10. Gate Charge 3.5 10 9 3.0 VDS = 600V I D = 0.7A 8 2.5 I G = 10mA 7 VGS - Volts I S - Amperes 1 I D - Amperes 2.0 1.5 o 6 5 4 TJ = 125 C 1.0 3 o TJ = 25 C 2 0.5 1 0 0.0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0 0.9 4 8 12 16 20 24 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10 10,000 Ciss 1,000 1 100 Z(th)JC - K / W Capacitance - PicoFarads f = 1 MHz C oss 0.1 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTY1R4N120PHV IXTY1R4N120P TO-252 AA Outline A A E b3 4 L3 TO-263 Outline E c2 C2 TO-220 Outline A E1 L1 A1 L4 1 2 A2 3 L1 e e1 e1 b2 L L2 c 0 5.55MIN OPTIONAL 1 1 - Gate 2,4 - Drain 3 - Source L2 3 b2 A oP A1 A1 4 H H1 Q D2 D b L3 c e 0.43 [11.0] D1 e E1 0 0.34 [8.7] 1 - Gate 2,4 - Drain 3 - Source 4 6.40 2.85MIN 2.28 1.25MIN LAND PATTERN RECOMMENDATION 0.20 [5.0] 0.10 [2.5] A2 EJECTOR PIN 0.66 [16.6] A2 6.50MIN BOTTOM VIEW 2 E D1 D H IXTA1R4N120P IXTP1R4N120P L1 L 0.12 [3.0] 0.06 [1.6] e c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source TO-252HV Outline 1 - Gate 2 - Source 3 - Drain © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_3N60P(2J) 6-20-17-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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