IXTZ550N055T2

Advance Technical Information IXTZ550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = RDS(on) ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 550 A IDM TC = 25°C, Pulse Width Limited by TJM 1650 A IA EAS TC = 25°C TC = 25°C 200 3 A J PD TC = 25°C 600 W -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 300 260 °C °C 2500 V~ 20..120 / 4.5..27 N/lb. 3 g D D D Maximum Ratings TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1mA TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force t = 1 minute t = 1 second Weight G S S G = Gate S = Source Isolated Tab D = Drain Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z 175°C Operating Temperature z Very High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Very Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 55 VGS(th) VDS = VGS, ID = 250μA 2.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Note 1 TJ = 150°C © 2010 IXYS CORPORATION, All Rights Reserved z z V 4.0 V ±200 nA 10 μA 1.5 mA Easy to Mount Space Savings High Power Density Applications z z z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications 1.0 mΩ DS100243(02/10) IXTZ550N055T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 95 VDS = 10V, ID = 60A, Note 1 160 S 40 nF 4970 pF 1020 pF 1.36 Ω 45 ns 40 ns 90 ns 230 ns 595 nC 150 nC 163 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.25 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 100A, VGS = 0V QRM -di/dt = 100A/μs VR = 27.5V 550 A 1700 A 1.2 V 100 5 ns A 250 nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTZ550N055T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 300 350 VGS = 15V VGS = 15V 10V 9V 8V 250 300 7V 10V 8V 7V 6V 250 6V ID - Amperes ID - Amperes 200 150 5V 200 5V 150 100 100 50 50 4V 0 0.00 4V 0 0.05 0.10 0.15 0.20 0.25 0.30 0.0 0.2 0.4 0.6 VDS - Volts 1.2 1.4 1.6 2.0 VGS = 15V 10V 8V 7V VGS = 10V 1.8 R DS(on) - Normalized 250 6V 200 ID - Amperes 1.0 Fig. 4. Normalized RDS(on) vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 150ºC 300 150 5V 100 50 I D < 550A 1.6 1.4 1.2 1.0 0.8 4V 0.6 0 0 0.1 0.2 0.3 0.4 0.5 -50 0.6 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 175 600 2.4 VGS = 10V 15V 2.2 500 TJ = 175ºC 2.0 1.8 ID - Amperes R DS(on) - Normalized 0.8 VDS - Volts 1.6 1.4 400 300 200 1.2 TJ = 25ºC 1.0 100 0.8 0 0.6 0 50 100 150 200 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 175 IXTZ550N055T2 Fig. 7. Input Admittance Fig. 8. Transconductance 220 250 200 180 200 140 g f s - Siemens ID - Amperes 160 120 100 TJ = 150ºC 25ºC 80 - 40ºC TJ = - 40ºC 25ºC 150ºC 150 100 60 50 40 20 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 VGS - Volts 120 140 160 180 200 220 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 300 10 VDS = 27.5V 9 250 I D = 275A 8 I G = 10mA 7 VGS - Volts 200 IS - Amperes 100 ID - Amperes 150 100 6 5 4 3 TJ = 150ºC TJ = 25ºC 50 2 1 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 100 200 VSD - Volts 400 500 600 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100 RDS(on) Limit Ciss 1,000 25µs 10 ID - Amperes Capacitance - NanoFarads 300 QG - NanoCoulombs Coss 100µs 100 1ms 1 Crss 10 10ms TJ = 175ºC TC = 25ºC f = 1 MHz 100ms DC Single Pulse 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 10 VDS - Volts 100 IXTZ550N055T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 48 48 RG = 1Ω , VGS = 10V 46 44 VDS = 27.5V 44 t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGS = 10V 46 VDS = 27.5V 42 I 40 D = 200A 38 36 I D TJ = 125ºC 42 40 38 TJ = 25ºC 36 = 100A 34 34 32 32 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 105 300 75 I D = 200A 200 60 I D = 100A 45 100 30 50 15 1.5 2.0 2.5 3.0 3.5 4.0 4.5 td(off) - - - - 200 120 I D = 200A 150 110 I D = 100A 100 100 50 90 0 25 5.0 35 45 55 65 75 85 95 105 115 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance td(off) - - - - 140 TJ = 125ºC 200 t d(off) - Nanoseconds 250 120 TJ = 25ºC 150 100 100 80 TJ = 125ºC 50 80 100 td(off) - - - - VDS = 27.5V 400 I D = 200A, 100A 300 300 200 200 100 100 60 0 60 tf TJ = 125ºC, VGS = 10V 400 120 140 160 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 180 40 200 0 0 1.0 1.5 2.0 2.5 3.0 RG - Ohms 3.5 4.0 4.5 5.0 t d(off) - Nanoseconds VDS = 27.5V 500 160 t f - Nanoseconds tf 80 125 500 180 RG = 1Ω, VGS = 10V 140 130 TJ - Degrees Centigrade 350 40 tf RG = 1Ω, VGS = 10V RG - Ohms 300 200 150 250 0 1.0 180 VDS = 27.5V t d(on) - Nanoseconds 250 0 t f - Nanoseconds 350 90 150 160 t d(off) - Nanoseconds VDS = 27.5V 300 t r - Nanoseconds td(on) - - - - TJ = 125ºC, VGS = 10V 120 t f - Nanoseconds tr 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 400 350 120 ID - Amperes IXTZ550N055T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds DE475 (IXTZ) Outline G D D G S D D S S D D S IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: TZ550N055T2 (V9)2-24-10 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.