IXXH30N65B4D1

IXXH30N65B4D1 XPTTM 650V IGBT GenX4TM w/ Diode VCES = IC110 = VCE(sat)  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 30A 2.0V 50ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 70 30 40 146 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 15 Clamped Inductive Load ICM = 60 @V CE  VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 10 µs PC TC = 25°C 230 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6 g = 25°C (Chip Capability) = 110°C = 110°C = 25°C, 1ms Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Md Mounting Torque Weight C Tab E G = Gate E = Emitter C = Collector Tab = Collector Features  TJ TJM Tstg TL G     Optimized for 5-30kHz Switching Square RBSOA Anti-Parallel Diode Short Circuit Capability International Standard Package Advantages    High Power Density Extremely Rugged Low Gate Drive Requirement Applications   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 4.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC  = 30A, VGE = 15V, Note 1 TJ = 150C © 2021 Littelfuse, Inc.  V  6.5 V  20 750 A A  100 nA TJ = 150C IGES  1.66 1.87 2.10 Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts V V DS100756B(1/21) IXXH30N65B4D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 25 IC = 30A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 30A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 30A, VGE = 15V VCE = 400V, RG = 15 Note 2 Inductive load, TJ = 150°C IC = 30A, VGE = 15V VCE = 400V, RG = 15 Note 2 RthJC RthCS 42 S 1460 146 22 pF pF pF 52 10 22 nC nC nC 20 65 1.04 150 50 0.73 ns ns mJ ns ns mJ 19 46 1.87 146 60 1.07 ns ns mJ ns ns mJ 0.21 0.65 °C/W °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 30A, VGE = 0V, Note 1 2.5 IRM trr IF = 30A, VGE = 0V, -diF/dt = 500A/µs, VR = 400V, TJ = 150°C TJ = 150°C 1.35 V V 14 185 A ns RthJC Notes: 0.75 °C/W 1. Pulse test, t  300µs, duty cycle, d  2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXXH30N65B4D1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 60 VGE = 15V 13V 12V 50 120 11V 100 10V 80 VGE = 15V IC - Amperes I C - Amperes 40 30 9V 20 14V 13V 12V 60 11V 40 9V 8V 10 20 7V 0 0 0.5 1 1.5 2 2.5 10V 8V 7V 0 3 0 5 10 15 25 30 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 60 2.0 V GE = 15V 13V 12V 12V 40 11V 30 10V 20 9V 10 8V 0.5 1 1.5 2 2.5 3 3.5 I C = 60A 1.6 1.4 1.2 I C = 30A 1.0 I C = 15A 0.8 7V 0 0 VGE = 15V 1.8 VCE(sat) - Normalized 50 IC - Amperes 20 VCE - Volts VCE - Volts 0.6 4 -50 -25 0 25 VCE - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 60 TJ = 25ºC 4.5 50 TJ = - 40ºC 25ºC 3.5 I C - Amperes VCE - Volts 4.0 I C = 60A 3.0 2.5 40 TJ = 150ºC 30 20 30A 2.0 10 1.5 15A 1.0 7 8 9 10 0 11 VGE - Volts © 2021 Littelfuse, Inc. 12 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 12 IXXH30N65B4D1 Fig. 8. Gate Charge Fig. 7. Transconductance 18 16 TJ = - 40ºC 16 14 12 25ºC 12 10 10 VGE - Volts g f s - Siemens VCE = 325V I C = 30A I G = 10mA 14 150ºC 8 8 6 6 4 4 2 2 0 0 0 10 20 30 40 50 60 0 5 10 15 I C - Amperes 20 25 30 35 40 45 50 55 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 70 10,000 f = 1 MHz 60 1,000 50 I C - Amperes Capacitance - PicoFarads Cies Coes 100 10 40 30 20 C res TJ = 150ºC RG = 15Ω dv / dt < 10V / ns 10 0 1 0 5 10 15 20 25 30 35 40 100 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance (IGBT) Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Second Littelfuse reserves the right to change limits, test conditions, and dimensions. 0.1 1 IXXH30N65B4D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 3.0 Eoff Eon TJ = 150ºC , V GE = 15V VCE = 400V 2.5 6 Eoff Eon RG = 15Ω , VGE = 15V VCE = 400V 2.5 8 5 I C = 60A 1.5 4 Eoff - MilliJoules 6 4 TJ = 150ºC 1.5 3 1.0 2 Eon - MilliJoules 2.0 2.0 Eon - MilliJoules E off - MilliJoules 3.0 10 TJ = 25ºC 1.0 I C = 30A 0.5 15 20 25 30 35 40 45 50 2 0.5 0 0.0 1 0 15 55 20 25 30 35 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature 6 4 1.2 3 I C = 30A 0.8 2 0.4 1 0.0 0 100 125 350 300 100 250 80 200 I C = 60A I C = 30A 60 150 40 100 20 50 15 20 25 30 35 40 45 50 T J - Degrees Centigrade RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature td(off) RG = 15Ω , VGE = 15V VCE = 400V 180 160 140 140 120 120 140 80 TJ = 25ºC TJ = 150ºC 120 60 100 40 80 60 20 25 30 35 40 I C - Amperes © 2021 Littelfuse, Inc. 45 50 55 60 55 180 tfi td(off) 170 RG = 15Ω , VGE = 15V VCE = 400V 160 100 150 80 140 I C = 30A 60 130 I C = 60A 40 120 20 20 110 0 0 100 25 50 75 100 T J - Degrees Centigrade 125 150 t d(off) - Nanoseconds 100 t d(off) - Nanoseconds 160 160 t f i - Nanoseconds 200 t f i - Nanoseconds td(off) 120 150 220 15 tf i TJ = 150ºC, VGE = 15V VCE = 400V t d(off) - Nanoseconds 1.6 tfi 60 400 140 5 Eon - MilliJoules Eoff - MilliJoules I C = 60A 75 55 160 t f i - Nanoseconds Eoff Eon RG = 15Ω ,VGE = 15V VCE = 400V 50 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 2.4 25 45 I C - Amperes RG - Ohms 2.0 40 IXXH30N65B4D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri td(on) TJ = 150ºC, VGE = 15V VCE = 400V 160 70 140 60 160 50 I C = 60A 120 40 80 30 40 I C = 30A 0 15 20 25 30 35 40 45 50 0 42 36 I C = 60A 30 80 24 60 18 I C = 30A 12 20 6 0 0 25 50 75 100 25 TJ = 25ºC 125 150 T J - Degrees Centigrade Littelfuse reserves the right to change limits, test conditions, and dimensions. 20 15 10 15 48 30 TJ = 150ºC 40 10 t d(on) - Nanoseconds t r i - Nanoseconds td(on) 120 40 35 20 25 30 35 40 I C - Amperes RG = 15Ω , VGE = 15V VCE = 400V 40 TJ = 25ºC 60 20 54 100 45 80 20 55 180 140 td(on) 100 Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature tri tri RG = 15Ω , VGE = 15V VCE = 400V 120 RG - Ohms 160 50 45 50 55 60 t d(on) - Nanoseconds 200 t d(on) - Nanoseconds t r i - Nanoseconds 240 80 t r i - Nanoseconds 280 IXXH30N65B4D1 Fig. 22. Reverse Recovery Charge vs. -diF/dt Fig. 21. Diode Forward Characteristics 300 2.4 270 TJ = 150ºC VR = 400V 2.2 240 2.0 I F = 60A 210 1.8 QRR (µC) IF (A) 180 150 TJ = 150ºC 120 1.6 30A 1.4 TJ = 25ºC 90 1.2 15A 60 1.0 30 0.8 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 500 1000 VF (V) 1500 2000 2500 3000 -diF/ dt (A/µs) Fig. 24. Reverse Recovery Time vs. -diF/dt Fig. 23. Reverse Recovery Current vs. -diF/dt 300 45 TJ = 150ºC VR = 400V 40 TJ = 150ºC VR = 400V 250 I F = 15A 35 30A 200 tRR (ns) I RR (A) 30 25 60A 20 I F = 60A 150 30A 100 15 15A 50 10 5 0 0 500 1000 1500 2000 2500 3000 0 500 1000 diF/dt (A/µs) 1500 2000 2500 3000 -diF/dt (A/µs) Fig. 25. Dynamic Parameters QRR, IRR vs. Junction Temperature Fig. 26. Maximum Transient Thermal Impedance (Diode) 1 1.4 VR = 400V I F = 30A -diF /dt = 600A/µs 1.2 0.8 Z(th)JC - K / W 1.0 KF KF IRR 0.6 0.1 0.4 KF QRR 0.2 0.0 0 20 40 60 80 T J (ºC) © 2021 Littelfuse, Inc. 100 120 140 160 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: IXX_30N65B4 (E4-RZ43) 1-07-21 IXXH30N65B4D1 TO-247 Outline D A A2 A B E Q S R 0P D2 D1 D 0P1 1 2 4 3 L1 C E1 L A1 C b b2 b4 e 1 - Gate 2,4 - Collector 3 - Emitter Littelfuse reserves the right to change limits, test conditions, and dimensions. IXXH30N65B4D1 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc.